DATA SHEET GaAs INTEGRATED CIRCUIT µPG2008TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2008TB is an L, S-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular, cordless telephone and other L, S-band wireless application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss. It housed in an original 6-pin super minimold package that is smaller than usual 6-pin minimold easy to install and contributes to miniaturizing the system. FEATURES • Low insertion loss : LINS = 0.3 dB TYP. @ Vcont = +3.0 V/0 V, f = 1 GHz LINS = 0.4 dB TYP. @ Vcont = +3.0 V/0 V, f = 2 GHz • High isolation : ISL = 27 dB TYP. @ V cont = +3.0 V/0 V, f = 0.5 to 2.0 GHz • 6-pin super minimold package (2.0 × 1.25 × 0.9 mm) APPLICATION • L, S-band digital cellular or cordless telephone • BuletoothTM, W-LAN and WLL applications ORDERING INFORMATION Part Number µPG2008TB-E3 Package 6-pin super minimold Marking G3D Supplying Form • Embossed tape 8 mm wide • Pin 1, 2, 3 face the perforation side of the tape • Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2008TB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PG10193EJ01V0DS (1st edition) Date Published November 2002 CP(K) Printed in Japan NEC Compound Semiconductor Devices 2002 µPG2008TB PIN CONNECTIONS 3 2 1 G3D (Top View) Pin No. Pin Name 1 OUT1 2 GND 3 OUT2 4 Vcont2 5 IN 6 Vcont1 (Bottom View) 4 4 3 5 5 2 6 6 1 ABSOLUTE MAXIMUM RATINGS (TA = +25°°C, unless otherwise specified) Parameter Symbol Ratings Unit Vcont1, 2 −6.0 to +6.0 Note V Input Power Pin +28 dBm Total Power Dissipation Ptot 0.15 W Operating Ambient Temperature TA −45 to +85 °C Storage Temperature Tstg −55 to +150 °C Control Voltage 1, 2 Note Vcont1-Vcont2 ≤ 6.0 V RECOMMENDED OPERATING RENGE (TA = +25°°C) Parameter Symbol MIN. TYP. MAX. Unit Control Voltage (High) Vcont(H) +2.5 +3.0 +5.3 V Control Voltage (Low) Vcont(L) −0.2 0 +0.2 V 2 Data Sheet PG10193EJ01V0DS µPG2008TB ELECTRICAL CHARACTERISTICS (TA = +25°°C, Vcont1 = +3 V, Vcont2 = 0 V or Vcont1 = 0 V, Vcont2 = +3 V, ZO = 50 Ω, Off chip DC blocking capacitors value; 51 pF, unless otherwise specified) Parameter Insertion Loss Symbol MIN. TYP. MAX. Unit f = 0.5 to 1.0 GHz − 0.30 0.55 dB f = to 2.0 GHz − 0.40 0.65 dB f = to 2.5 GHz − − 0.90 dB f = 0.5 to 2.0 GHz 22 27 − dB f = to 2.5 GHz 18 − − dB f = 0.5 to 2.0 GHz 13 19 − dB f = to 2.5 GHz 11 − − dB f = 0.5 to 2.0 GHz 13 19 − dB f = to 2.5 GHz 11 − − dB Pin(0.1 dB) f = 1.0 GHz, Vcont = +3 V/0 V − 23.0 − dBm Pin(1 dB) f = 1.0 GHz, Vcont = +3 V/0 V 22.0 26.5 − dBm − 50 200 ns − 0.5 10 µA LINS Isolation ISL Input Return Loss RLin Output Return Loss RLout Input Power at 0.1 dB Compression Point Note Input Power at 1 dB Compression Point Test Conditions Note Switching Speed tSW Control Current Icont Vcont = +3 V/0 V, RF Non Note Pin(0.1 dB) or Pin(1 dB) is measured the input power level when the insertion loss increase more 0.1 dB or 1 dB than that of linear range. All other characteristics are measured in linear range. Cautions 1. When the µPG2008TB is used it is necessary to use DC blocking capacitors for No.1 (OUT1), No.3 (OUT2) and No.5 (IN). The value of DC blocking capacitors should be chosen to accommodate the frequency of operation, bandwidth, switching speed and the condition with actual board of your system. The range of recommended DC blocking capacitor value is less than 100 pF. 2. The distance between IC’s GND pin and ground pattern of substrate should be as shorter as possible to avoid parasitic parameters. Data Sheet PG10193EJ01V0DS 3 µPG2008TB EVALUATION CIRCUIT Vcont1 = 3.0 V, Vcont2 = 0 V or Vcont2 = 0 V, Vcont1 = 3.0 V, off chip DC blocking capacitors value C1 = 51 pF, C2 = 1 000 pF (Bypass), using NEC standard evaluation board. C2 C1 5 IN C1 4 Vcont2 G3D 6 Vcont1 1 OUT1 2 3 OUT2 C1 C2 EVALUATION BOARD Vcont1 6pin SMM SPDT SW Vc1 OUT1 OUT 1 C2 C1 G3D IN C1 C1 IN C2 OUT 2 OUT2 Vc2 Vcont2 TRUTH TABLE 4 Vcont1 Vcont2 IN−OUT1 IN−OUT2 Low High ON OFF High Low OFF ON Data Sheet PG10193EJ01V0DS µPG2008TB TYPICAL CHARACTERISTICS TEST CONDITION: TA = +25°C, Vcont1/2 = 0 V/3.0 V, Pin = 0 dBm, OUT2 side is 50 Ω termination ISOLATION vs. FREQUENCY INPUT RETURN LOSS vs. FREQUENCY log MAG CH1 S21 10 dB/ REF 0 dB 1: –22.234 dB 1.0 GHz 2: –27.13 dB 1.5 GHz 3: –30.052 dB 2.0 GHz 4: –24.396 dB 2.5 GHz 5: –16.767 dB 3.0 GHz 0 1 –20 5 Isolation ISL (dB) Input Return Loss RLin (dB) CH1 S11 log MAG 1: –25.638 dB 1.0 GHz 2: –25.607 dB 1.5 GHz 3: –24.781 dB 2.0 GHz 4: –22.34 dB 2.5 GHz 5: –19.074 dB 3.0 GHz 0 1 –20 4 2 START 0.500 000 000 GHz START 0.500 000 000 GHz STOP 3.500 000 000 GHz –2.0 OUTPUT RETURN LOSS vs. FREQUENCY 1 dB/ REF 0 dB CH1 S22 1: –0.660 dB 1.0 GHz 2: –0.771 dB 1.5 GHz 3: –0.892 dB 2.0 GHz 4: –1.047 dB 2.5 GHz 5: –1.340 dB 3.0 GHz 1 2 3 4 5 –4.0 START 0.500 000 000 GHz STOP 3.500 000 000 GHz Output Return Loss RLout (dB) Insertion Loss LINS (dB) 0 STOP 3.500 000 000 GHz Frequency f (GHz) INSERTION LOSS vs. FREQUENCY log MAG 5 –40 Frequency f (GHz) CH1 S21 4 3 2 3 –40 10 dB/ REF 0 dB log MAG 10 dB/ REF 0 dB 1: –21.598 dB 1.0 GHz 2: –24.054 dB 1.5 GHz 3: –25.127 dB 2.0 GHz 4: –23.43 dB 2.5 GHz 5: –17.219 dB 3.0 GHz 0 1 –20 5 2 3 4 –40 START 0.500 000 000 GHz Frequency f (GHz) STOP 3.500 000 000 GHz Frequency f (GHz) Data Sheet PG10193EJ01V0DS 5 µPG2008TB TEST CONDITION: TA = +25°C, f = 1 GHz, Vcont1/2 = 0 V3.0 V, OUT2 side is termination INPUT POWER vs. OUTPUT POWER Output Power Pout (dBm) 30 25 20 15 10 5 10 15 20 25 30 P–1 = +26.4 dBm Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. 6 Data Sheet PG10193EJ01V0DS µPG2008TB PACKAGE DIMENSIONS 6-PIN SUPER MINIMOLD (UNIT: mm) 2.1±0.1 0.2+0.1 –0.05 0.65 0.65 1.3 Data Sheet PG10193EJ01V0DS 0.15+0.1 –0.05 0 to 0.1 0.7 0.1 MIN. 0.9±0.1 2.0±0.2 1.25±0.1 7 µPG2008TB RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) Time at peak temperature Time at temperature of 220°C or higher Preheating time at 120 to 180°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) Time at temperature of 200°C or higher Preheating time at 120 to 150°C Maximum number of reflow processes Maximum chlorine content of rosin flux (% mass) : 215°C or below : 25 to 40 seconds : 30 to 60 seconds : 3 times : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) Time at peak temperature Preheating temperature (package surface temperature) Maximum number of flow processes Maximum chlorine content of rosin flux (% mass) : 260°C or below : 10 seconds or less : 120°C or below : 1 time : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) Soldering time (per side of device) Maximum chlorine content of rosin flux (% mass) : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). 8 Data Sheet PG10193EJ01V0DS µPG2008TB Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. • The information in this document is current as of November 2002. 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(Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4 - 0110 Data Sheet PG10193EJ01V0DS 9 µPG2008TB SAFETY INFORMATION ON THIS PRODUCT Caution GaAs Products The product contains gallium arsenide, GaAs. GaAs vapor and powder are hazardous to human health if inhaled or ingested. • Do not destroy or burn the product. • Do not cut or cleave off any part of the product. • Do not crush or chemically dissolve the product. • Do not put the product in the mouth. Follow related laws and ordinances for disposal. The product should be excluded from general industrial waste or household garbage. 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