SLD1137VS 650nm Index-Guided Red Laser Diode Description The SLD1137VS is an index-guided red laser diode for BCS. Operating current is 25mA lower than SLD1133VS. M-274 Features • Small astigmatism (7µm typ.) • Low operating current (35mA typ.) • Small package (φ5.6mm) • Single longitudinal mode Absolute Maximum Ratings (Tc = 25°C) • Optical power output Po 7 mW • Reverse voltage VR LD 2 V PD 15 V • Operating temperature Topr –10 to +60 °C • Storage temperature Tstg –40 to +85 °C Applications Bar code scanner Structure • AlGaInP MQW laser diode • PIN photodiode to monitor laser beam output Recommend Optical Power Output 5mW Pin Configuration Connection Diagram Common 3 2 LD PD 2 1 1 3 1. LD cathode 2. PD anode 3. Common Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E99202-PS SLD1137VS Electrical and Optical Characteristics (Tc = 25°C) Item Symbol Tc: Case temperature Conditions Min. Typ. Max. Unit 30 40 mA Threshold current Ith Operating current Iop Po = 5mW 35 45 mA Operating voltage Vop Po = 5mW 2.2 2.7 V Wavelength λp Po = 5mW 650 655 nm 24 30 40 degree 6 8 12 degree ±80 µm ±3 degree ±3 degree 0.5 0.8 mW/mA 7 15 µm 0.1 0.5 mA Radiation angle Positional accuracy Perpendicular θ⊥ Parallel θ// Position ∆X, ∆Y, ∆Z Angle ∆φ// Po = 5mW Po = 5mW ∆φ⊥ Differential efficiency ηD Po = 5mW Astigmatism As Po = 5mW Monitor current Imon Po = 5mW, VR = 5V –2– 0.3 0.05 SLD1137VS Example of Representative Characteristics Optical power output vs. Forward current characteristics Optical power output vs. Monitor current characteristics TC = 0°C 25°C 40°C 60°C TC = 0°C 25°C 40°C 60°C Far field pattern (FFP) Po = 5mW Tc = 25°C 6 θ⊥ 5 Relative radiant intensity Po – Optical power output [mW] 7 Imon 4 3 2 θ // 1 0 20 0 40 60 –60 –20 –40 IF – Forward current [mA] 0 0 20 40 60 Angle [degree] 0.2 Imon – Monitor current [mA] Threshold current vs. Temperature characteristics Monitor current vs. Temperature characteristics 200 0.2 Imon – Monitor current [mA] Ith – Threshold current [mA] PO = 5mW 100 10 –20 –10 0 10 20 30 40 50 60 70 Tc – Case temperature [°C] 0.1 0 –20 –10 0 10 20 30 40 50 Tc – Case temperature [°C] –3– 60 70 SLD1137VS Temperature dependence of spectrum Po = 5mW Tc = 60°C Relative radiant intensity Tc = 40°C Tc = 25°C Tc = 0°C 645 650 655 λ – Wavelength [nm] –4– 660 665 SLD1137VS Power output dependence of spectrum Tc = 25°C Relative radiant intensity Po = 7mW Po = 5mW Po = 1mW 645 650 655 λ – Wavelength [nm] –5– 660 665 SLD1137VS Package Outline Unit: mm M-274 Reference Slot 0.4 1.0 0.5 90° 3 1 2 0 φ5.6 – 0.025 φ4.4 MAX φ3.7 MAX φ1.0 MIN 1.2 ± 0.1 Reference Plane 2 3 1 3 – φ0.45 ∗Optical Distance = 1.35 ± 0.08 6.5 LD Chip & Photo Diode SONY CODE 2.6 MAX 0.5 MIN ∗1.26 0.25 Window Glass PCD φ2.0 M-274 PACKAGE WEIGHT EIAJ CODE JEDEC CODE –6– 0.3g