WED3C7558M-XBX
RISC Microprocessor Multichip Package
OVERVIEW
The WED3C7558M-XBX is offered in Commercial (0°C to
+70°C), industrial (-40°C to +85°C) and military (-55°C to
+125°C) temperature ranges and is well suited for embedded applications such as missiles, aerospace, flight computers, fire control systems and rugged critical systems.
The WEDC 755/SSRAM multichip package is targeted for
high performance, space sensitive, low power systems and
supports the following power management features: doze,
nap, sleep and dynamic power management.
*This data sheet describes a product that is subject to change without notice.
The WED3C7558M-XBX multichip package consists of:
• 755 RISC processor
FEATURES
• Dedicated 1MB SSRAM L2 cache, configured as
128Kx72
n Footprint compatible with WED3C750A8M-200BX
• 21mmx25mm, 255 Ceramic Ball Grid Array (CBGA)
n Footprint compatible with Motorola MPC 745
• Core Frequency/L2 Cache Frequency (300MHz/
150MHz, 350MHz/175MHz)
• Maximum 60x Bus frequency = 66MHz
F .1 M
IG
April 2002 Rev. 6
ULTI
-C
HIP
P
AC K AG E
D
IAG R AM
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
WED3C7558M-XBX
F .2
IG
B
LO C K
D
I AG R AM
White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520
2
WED3C7558M-XBX
F .3
B
F .4
B
IG
IG
LOCK
LOCK
D
IAG R AM
D
, L2 I
IAGRAM
NTERCONNECT
, L2 I
NTERCONNECT
3
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WED3C7558M-XBX
F .5
IG
P
IN
A
S SIGNMENTS
Ball assignments of the 255 CBGA package as viewed from the top surface.
Side profile of the CBGA package to indicate the direction of the top surface view.
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4
WED3C7558M-XBX
P
Signal Name
ACK AGE
P
INOUT
L
ISTING
Pin Number
Active
I/O
2.0V (7)
3.3V (7)
High
I/O
A[0-31]
C16, E4, D13, F2, D14, G1, D15, E2, D16, D4, E13, G2, E15, H1, E16, H2, F13, J1, F14,
J2, F15, H3, F16, F4, G13, K1, G15, K2, H16, M1, J15, P1
AACK
ABB/AMONO (8)
L2
K4
Low
Low
Input
Output
AP[0-3]
ARTRY
C1, B4, B3, B2
J4
High
Low
I/O
I/O
AVDD
BG
A10
L1
—
Low
—
Input
BR
BVSEL (4, 5, 6)
B6
B1
Low
High
Output
Input
CI
CKSTP_IN
E1
D8
Low
Low
Output
Input
CKSTP_OUT
CLK_OUT
A6
D7
Low
—
Ouput
Output
DBB
DBG
J14
N1
Low
Low
Output
Input
DBDIS
DBWO
H15
G4
Low
Low
Input
Input
P14, T16, R15, T15, R13, R12, P11, N11, R11, T12, T11, R10, P9, N9, T10, R9, T9, P8,
N8, R8, T8, N7, R7, T7, P6, N6, R6, T6, R5, N5, T5, T4
High
I/O
DH[0-31]
K13, K15, K16, L16, L15, L13, L14, M16, M15, M13, N16, N15, N13, N14, P16, P15,
R16, R14, T14, N10, P13, N12, T13, P3, N3, N4, R3, T1, T2, P4, T3, R4
High
I/O
DL[0-31]
DP[0-7]
DRTRY
M2, L3, N2, L4, R1, P2, M4, R2
G16
High
Low
I/O
Input
GBL
GND
F1
C5, C12, E3, E6, E8, E9, E11, E14, F5, F7, F10, F12, G6, G8, G9, G11, H5, H7, H10, H12,
Low
—
I/O
—
HRESET
J5, J7, J10, J12, K6, K8, K9, K11, L5, L7, L10, L12, M3, M6, M8, M9, M11, M14, P5, P12
A7
Low
Input
INT
L1_TSTCLK (1)
B15
D11
Low
High
Input
Input
L2_TSTCLK (1)
L2AVDD (8)
D12
L11
High
—
Input
—
2.0V
2.0V
L2OVDD (9)
L2VSEL (4, 5, 6, 7)
E10, E12, M12, G12, G14, K12, K14
B5
—
High
—
Input
2.0V
*—
3.3V
3.3V
LSSD_MODE (1)
MCP
B10
C13
Low
Low
Input
Input
3.3V
NC (No-connect)
OVDD (2)
C3, C6, D5, D6, H4, A4, A5, A2, A3
C7, E5, G3, G5, K3, K5, P7, P10, E07, M05, M07, M10
—
—
—
—
PLL_CFG[0-3]
QACK
A8, B9, A9, D9
D3
High
Low
Input
Input
QREQ
RSRV
J3
D1
Low
Low
Output
Output
SMI
SRESET
A16
B14
Low
Low
Input
Input
STCK (10)
STDI
B7
C8
—
Input
Input
—
—
STDO
J16
—
Output
—
—
5
2.0V
2.0V
HRESET OVDD
GND
GND
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WED3C7558M-XBX
P
ACK AG E
Signal Name
STMS
P
INOUT
L
ISTING
(
CONTINUED
Pin Number
)
Active
B8
I/O
2.0V (7)
3.3V (7)
Input
SYSCLK
C9
—
Input
TA
H14
Low
Input
TBEN
C2
High
Input
TBST
A14
Low
I/O
TCK
C11
High
Input
TDI (6)
A11
High
Input
TDO
A12
High
Output
TEA
H13
Low
Input
TLBISYNC
C4
Low
Input
TMS (6)
B11
High
Input
TRST (6)
C10
Low
Input
TS
J13
Low
I/O
TSIZ[0-2]
A13, D10, B12
High
Output
TT[0-4]
B13, A15, B16, C14, C15
High
I/O
VDD (2)
F6, F8, F9, F11, G7, G10, H6, H8, H9, H11, J6, J8, J9, J11, K7, K10, L6, L8, L9
—
—
2.0V
2.0V
VOLDET (3)
F3
Low
Output
—
—
NOTES:
1. These are test signals for factory use only and must be pulled up to OVdd for normal machine operation.
2. OVdd inputs supply power to the I/O drivers and Vdd inputs supply power to the processor core.
3. Internally tied to GND in the BGA package to indicate to the power supply that a low-voltage processor is present. This signal is not a power supply pin.
4. To allow processor bus I/0 voltage changes, provide the option to connect BVSEL and L2VSEL independently to either OVdd (Selects 3.3V Interface) or to GND
(Selects 2.0V Interface).
5. Uses one of 15 existing no-connects in WEDC’s WED3C750A8M-200BX.
6. Internal pull up on die.
7. OVdd supplies power to the processor bus, JTAG, and all control signals except the L2 cache controls (L2CE, L2WE, and L2ZZ); L2OVDD supplies
power to the L2 cache I/O interface (L2ADDR (0-16], L2DATA (0-63), L2DP{0-7] and L2SYNC-OUT) and the L2 control signals and the SSRAM power supplies; and Vdd
supplies power to the processor core and the PLL and DLL (after filtering to become AVDD and L2AVDD respectively). These columns serve as a reference for the nominal
voltage supported on a given signal as selected by the BVSEL/L2VSEL pin configurations and the voltage supplied. For actual recommended value of Vin or supply
voltages see Recommended Operating Conditions.
8. Uses one of 20 existing Vdd pins in WEDC's WED3C750A8M-200BX, no board level design changes are necessary. For new designs of WED3C7558M-XBX refer to PLL
power supply filtering.
9. L20Vdd for future designs that will require 2.0V L2 cache power supply - compatible with existing design using WED3C750A8M-200BX.
10. To disable SSRAM TAP controllers without interfering with the normal operation of the devices, STCK should be tied low (GND) to prevent clocking the devices.
11. STDI and STMS are internally pulled up and may be left unconnected. Upon power-up the SSRAM devices will come up in a reset state which will not interfere with
the operation of the device.
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WED3C7558M-XBX
A
B SOLUTE
M
AXIMUM
R
ATINGS
Characteristic
Symbol
Value
Unit
Notes
Core supply voltage
Vdd
-0.3 to 2.5
V
(4)
PLL supply voltage
AVdd
-0.3 to 2.5
V
(4)
L2 DLL supply voltage
L2AVDD
-0.3 to 2.5
V
(4)
60x bus supply voltage
OVdd
-0.3 to 3.465
V
(3)
L2 bus supply voltage
L2OVdd
-0.3 to 3.465
V
(3)
Input supply
Processor Bus
Vin
-0.3 to 0Vdd +0.3
V
(2)
L2 bus
Vin
-0.3 to L20Vdd +0.3
V
(2)
JTAG Signals
Vin
-0.3 to 3.6
V
(2)
Tstg
-55 to 150
°C
Storage temperature range
NOTES:
1. Functional and tested operating conditions are given in Operating Conditions table. Absolute maximum ratings are stress ratings only, and
functional operation at the maximums is not guaranteed. Stresses beyond those listed may affect device reliability or cause permanent damage
to the device.
2. Caution: Vin must not exceed OVdd by more than 0.3V at any time including during power-on reset.
3. Caution: OVdd/L2OVDD must not exceed Vdd/AVdd/L2AVdd by more than 1.6 V at any time including during power-on reset.
4. Caution: Vdd/AVdd/L2AVDD must not exceed L2OVdd/OVdd by more than 0.4 V at any time including during power-on reset.
R
ECOMMENDED
O
PERATING
Characteristic
Core supply voltage
PLL supply voltage
L2 DLL supply voltage
Processor bus supply
BVSEL = 0
C
ONDITIONS
Symbol
Recommended
Value
Unit
Vdd
2.0v ± 100mV
V
AVdd
2.0v ± 100mV
V
L2AVdd
2.0v ± 100mV
V
OVdd
2.0± 100mV
V
voltage
BVSEL = 1
OVdd
3.3v ± 165mV
V
L2 bus supply voltage
L2VSEL = 1
L20Vdd
3.3v ± 165mV
V
Processor bus
Vin
GND to OVdd
V
JTAG Signals
Vin
GND to OVdd
V
Input Voltage
NOTE:
These are the recommended and tested operating conditions. Proper device operation outside of these conditions is not guaranteed
7
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WED3C7558M-XBX
P
V
DD
=AV
DD
=2.0±0.1V V
DC
OWER
, OV
DD
C
ONSUMPTION
=3.3V ±5% V
DC
, GND=0 V
DC
, 0£T <105°C
J
Processor (CPU) Frequency/L2 Frequency
400 MHz/200MHz
Full-on Mode
Unit
Notes
Typical
4.3
W
1, 3
Maximum
7.4
W
1, 2
Doze Mode
Maximum
2.6
W
1, 2
Nap Mode
Maximum
1.3
W
1, 2
Sleep Mode
Maximum
1.26
W
1, 2
Sleep Mode–PLL and DLL Disabled
Maximum
500
mW
1, 2
NOTES:
1. These values apply for all valid system bus and L2 bus ratios. The values do not include OVdd; AVdd and L2AVdd suppling power. OVdd power is
system dependent, but is typically <10% of Vdd power. Worst case power consumption, for AVdd=15mW and L2AVdd=15mW.
2. Maximum power is measured at Vdd=2.1V while running an entirely cache-resident, contrived sequence of instructions which keep the execution
units maximally busy.
3. Typical power is an average value measured at Vdd=AVdd=L2AVdd=2.0V, OVdd=L2OVdd=3.3V in a system, executing typical applications and
benchmark sequences.
L2 C
ACHE
C
ONTROL
R
EGISTER
(L2CR)
The L2 cache control register, shown in Figure 5, is a supervisor-level, implementation-specific SPR used to configure and
operate the L2 cache. It is cleared by hard reset or power-on reset.
F . 5 L2 C
IG
C
ACHE
ONTROL
L2WT
L2PE
L2E
0
L2DO
L2SIZ
1
2
3
L2CLK
4
L2RAM
6
7
L2CTL
L2TS
L2I
R
EGISTER
(L2CR)
L2DF
L2SL
L20H
L2CS
L2BYP
L2IO
0
L2DRO
0
L2IP
L2CTR
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
30
The L2CR bits are described in Table 1.
Reserved
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8
31
WED3C7558M-XBX
T
ABLE
1: L2CR B S
IT
ET TINGS
Bit
Name
Function
0
L2E
L2 enable. Enables L2 cache operation (including snooping) starting with the next transaction the L2 cache unit receives. Before
enabling the L2 cache, the L2 clock must be configured through L2CR[2CLK], and the L2 DLL must stabilize. All other L2CR bits must
be set appropriately. The L2 cache may need to be invalidated globally.
1
L2PE
L2 data parity checking enable. Enables parity generation and checking for the L2 data RAM interface. When disabled, generated
parity is always zeros. L2 Parity is supported by WEDC’s WED3C7558M-XBX, but is dependent on application.
2–3
L2SIZ
L2 size—Should be set according to the size of the L2 data RAMs used.
11
4–6
L2CLK
000
001
010
011
100
101
110
111
7–8
L2RAM
1 Mbyte - Setting for WED3C7558M-XBX
L2 clock ratio (core-to-L2 frequency divider). Specifies the clock divider ratio based from the core clock frequency that the
L2 data RAM interface is to operate at. When these bits are cleared, the L2 clock is stopped and the on-chip DLL for the L2
interface is disabled. For nonzero values, the processor generates the L2 clock and the on-chip DLL is enabled. After the L2 clock
ratio is chosen, the DLL must stabilize before the L2 interface can be enabled. The resulting L2 clock frequency cannot be slower
than the clock frequency of the 60x bus interface.
L2 clock and DLL disabled
¸1
¸ 1.5
Reserved
¸ 2 - Setting for WED3C7558M-XBX
¸ 2.5
¸3
Reserved
L2 RAM type—Configures the L2 RAM interface for the type of synchronous SRAMs used:
• Pipelined (register-register) synchronous burst SRAMs that clock addresses in and clock data out
The 755 does not burst data into the L2 cache, it generates an address for each access.
10 Pipelined (register-register) synchronous burst SRAM - Setting for WED3C7558M-XBX
9
L2DO
L2 data only. Setting this bit enables data-only operation in the L2 cache. For this operation, instruction transactions from the L1 Instruction
cache already cached in the L2 cache can hit in the L2, but new instruction transactions from the L1 instruction cache are treated as
cache-inhibited (bypass L2 cache, no L2 checking done). When both L2DO adn L2IO are set, the L2 cache is effectively locked (cache
misses do not cause new entries to be allocated but write hits use the L2).
10
L2I
L2 global invalidate. Setting L2I invalidates the L2 cache globally by clearing the L2 status bits. This bit must not be set while the L2
cache is enabled. See Motorola’s User manual for L2 Invalidation procedure.
11
L2CTL
L2 RAM control (ZZ enable). Setting L2CTL enables the automatic operation of the L2ZZ (low-power mode) signal for cache RAMs.
Sleep mode is supported by the WED3C7558M-XBX. While L2CTL is asserted, L2ZZ asserts automatically when the device
enters nap or sleep mode and negates automatically when the device exits nap or sleep mode. This bit should not be set when the
device is in nap mode and snooping is to be performed through deassertion of QACK.
12
L2WT
L2 write-through. Setting L2WT selects write-through mode (rather than the default write-back mode) so all writes to the L2 cache also write
through to the system bus. For these writes, the L2 cache entry is always marked as exclusive rather than modified. This bit must never be
asserted after the L2 cache has been enabled as previously-modified lines can get remarked as exclusive during normal operation.
13
L2TS
L2 test support. Setting L2TS causes cache block pushes from the L1 data cache that result from dcbf and dcbst instructions to be
written only into the L2 cache and marked valid, rather than being written only to the system bus and marked invalid in the L2 cache
in case of hit. This bit allows a dcbz/ dcbf instruction sequence to be used with the L1 cache enabled to easily initialize the L2 cache
with any address and data information. This bit also keeps dcbz instructions from being broadcast on the system and single-beat
cacheable store misses in the L2 from being written to the system bus.
14–15
L2OH
0: Setting for the L2 Test suppor t as this bit is reser ved for tests.
L2 output hold. These bits configure output hold time for address, data, and control signals driven to the L2 data RAMs.
00: Least Hold Time - Setting for WED3C7558M-XBX
9
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WED3C7558M-XBX
T
ABLE
1: L2CR B S
IT
ET TINGS
Bit
Name
Function
16
L2SL
L2 DLL slow. Setting L2SL increases the delay of each tap of the DLL delay line. It is intended to increase the delay through the DLL to
accommodate slower L2 RAM bus frequencies.
17
L2DF
L2 differential clock. This mode supports the differential clock requirements of late-write SRAMs.
18
L2BYP
L2 DLL bypass is reserved.
19-20
—
Reserved. These bits are implemented but not used; keep at 0 for future compatibility.
21
L2IO
L2 Instruction-only. Setting this bit enables instruction-only operation in the L2 cache. For this operation, data transactions from the L1 data cache
already cached in the L2 cache can hit in the L2 (including writes), but new data transactions (transactions that miss in the L2) from the L1 data
cashe are treated as cache-inhibited (bypass L2 cache, no L2 checking done). When both L2DO and L2IO are set, the L2 cache is effectively
locked (cache misses do not cause new entries to be allocated but write hits use the L2). Note that this bit can be programmed dynamically.
22
L2CS
L2 Clock Stop. Setting this bit causes the L2 clocks to the SRAMs to automatically stop whenever the MPC755 enters nap or sleep modes, and
automatically restart when exiting those modes (including for snooping during nap mode). It operates by asynchronously gating off the
L2CLK_OUT [A:B] signals while in nap or sleep mode. The L2SYNC_OUT/SYNC_IN path remains in operation, keeping the DLL synchronized. This
bit is provided as a power-saving alternative to the L2CTL bit and its corresponding ZZ pin, which may not be useful for dynamic stopping/
restarting of the L2 interface from nap and sleep modes due to the relatively long recovery time from ZZ negation that the SRAM requires.
23
L2DRO
L2 DLL rollover. Setting this bit enables a potential rollover (or actual rollover) condition of the DLL to cause a checkstop for the processor.
A potential rollover condition occurs when the DLL is selecting the last tap of the delay line, and thus may risk rolling over to the first tap with
one adjustment while in the process of keeping synchronized. Such a condition is improper operation for the DLL, and, while this condition is
not expected, it allows detection for added security. This bit can be set when the DLL is first enabled (set with the L2CLK bits) to detect
rollover during initial synchronization. It could also be set when the L2 cache is enabled (with L2E bit) after the DLL has achieved its initial lock.
24–30
L2CTR
L2 DLL counter (read-only). These bits indicate the current value of the DLL counter (0 to 127). They are asynchronously read when the L2CR is
read, and as such should be read at least twice with the same value in case the value is asynchronously caught in transition. These bits are
intended to provide observability of where in the 128-bit delay chain the DLL is at any given time. Generally, the DLL operation should be
considered at risk if it is found to be within a couple of taps of its beginning or end point (tap 0 or tap 128).
31
L2IP
L2 global invalidate in progress (read only)—See the Motorola user’s manual for L2 Invalidation procedure.
0: Setting for WED3C7558M-XBX
0: Setting for WED3C7558M-XBX
because L2 RAM interface is operated above 100 MHz.
because late-write SRAMs are not used.
0: Setting for WED3C7558M-XBX
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10
WED3C7558M-XBX
PLL P
OWER
S
UPPLY
The AVdd and L2AVdd power signals are provided on
the WED3C7558M-XBX to provide power to the clock
generation phase-locked loop and L2 cache delay-locked
loop respectively. To ensure stability of the internal clock,
the power supplied to the AVdd input signal should be
filtered of any noise in the 500kHz to 10 MHz resonant
frequency range of the PLL. A circuit similar to the one
shown in Figure 6 using surface mount capacitors with
minimum Effective Series Inductance (ESL) is recommended. Multiple small capacitors of equal value are
F .6P
IG
OWER
S
F
I LTERING
recommended over a single large value capacitor. The
circuit should be placed as close as possible to the
AVdd pin to minimize noise coupled from nearby circuits.
An identical but separate circuit should be placed as
close as possible to the L2AVdd pin. It is often possible
to route directly from the capacitors to the AVdd pin,
which is on the periphery of the 255 BGA footprint,
without the inductance of vias. The L2AVdd pin may be
more difficult to route but is proportionately less critical.
UPPLY
11
F
I LTER
C
IRCUIT
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WED3C7558M-XBX
P
ACKAGE
D
ESCRIPTION
Package Outline
21x25mm
Interconnects
255 (16x16 ball array less one)
Pitch
1.27mm
Maximum module height
3.90mm
Ball diameter
P
ACK AGE
D
0.8mm
IMENSIONS
255 B
ALL
G
RID
A
R RAY
NOTES:
1. Dimensions in millimeters and paranthetically in inches.
2. A1 corner is designated with a ball missing the array.
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WED3C7558M-XBX
O
RDERING
I
NFORMATION
WED 3 C 755 8M X B X
DEVICE GRADE:
M = Military Screened
-55°C to +125°C
I = Industrial
-40°C to +85°C
C = Commercial
0°C to +70°C
PACKAGE TYPE:
B = 255 Ceramic Ball Grid Array
CORE FREQUENCY (MHz)
350 = 350MHz/175MHz L2 cache
300 = 300MHz/150MHz L2 cache
L2 CACHE DENSITY:
8Mbits = 128K x 72 SSRAM
PowerPC Ô:
Type 755
C = MULTICHIP PACKAGE
3 = PowerPC Ô
WHITE ELECTRONIC DESIGNS CORP.
PowerPCÔ is a trademark of International Business Machine Corp.
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