WED8L24513V Asynchronous SRAM, 3.3V, 512Kx24 FEATURES DESCRIPTION n 512Kx24 bit CMOS Static The WED8L24513VxxBC is a 3.3V, twelve megabit SRAM constructed with three 512Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the WED8L24513V is ideal for creating a single chip memory solution for the Motorola DSP5630x (Figure 8) or a two chip solution for the Analog Devices SHARCTM DSP (Figure 9). n Random Access Memory Array Fast Access Times: 10, 12, and 15ns Master Output Enable and Write Control TTL Compatible Inputs and Outputs Fully Static, No Clocks n Surface Mount Package The single or dual chip memory solutions offer improved system performance by reducing the length of board traces and the number of board connections compared to using multiple monolithic devices. 119 Lead BGA (JEDEC MO-163), No. 391 Small Footprint, 14mmx22mm Multiple Ground Pins for Maximum Noise Immunity n Single +3.3V (±5%) Supply Operation The JEDEC Standard 119 lead BGA provides a 61% space savings over using three 512Kx8, 400 mil wide SOJs and the BGA package has a maximum height of 110 mils compared to 148 mils for the SOJ packages. n DSP Memory Solution Motorola DSP5630x Analog Devices SHARCTM FIG. 1 PIN CONFIGURATION PIN NAMES PIN SYMBOLS 1 A B C D E F G H J K L M N P R T U NC NC I/012 I/013 I/014 I/015 I/016 I/017 NC I/018 I/019 I/020 I/021 I/022 I/023 NC NC Aug. 2002 Rev. 0A ECO #15432 2 AO A5 NC VCC GND VCC GND VCC GND VCC GND VCC GND VCC A18 A9 A13 3 A1 A6 NC GND VCC GND VCC GND VCC GND VCC GND VCC GND NC A10 A14 4 A2 E NC GND GND GND GND GND GND GND GND GND GND GND NC W G 5 A3 A7 NC GND VCC GND VCC GND VCC GND VCC GND VCC GND NC A11 A15 6 A4 A8 NC VCC GND VCC GND VCC GND VCC GND VCC GND VCC A17 A12 A16 7 A0-18 E Chip Enable NC NC I/00 I/01 I/02 I/03 I/04 I/05 NC I/06 I/07 I/08 I/09 I/010 I/011 NC NC W Master Write Enable 1 Address Inputs G Master Output Enable DQ0-23 Common Data Input/Output VCC Power (3.3V ±5%) GND Ground NC No Connection BLOCK DIAGRAM A0-A18 G W E 19 512K x 24 Memory Array DQ0-7 DQ8-15 DQ16-23 White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com WED8L24513V ABSOLUTE MAXIMUM RATINGS Voltage on any pin relative to VSS Operating Temperature TA (Ambient) Commercial Industrial Storage Temperature Power Dissipation Output Current. RECOMMENDED DC OPERATING CONDITIONS -0.5V to 4.6V Parameter Supply Voltage Supply Voltage Input High Voltage Input Low Voltage 0°C to + 70°C -40°C to +85°C -55°C to +125°C 1.5 Watts 50 mA Min 3.135 0 2.2 -0.3 FIG. 2 *Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Typ Max Units 3.3 3.465 V 0 0 V -- VCC+0.3 V -0.8 V FIG. 3 VCC 319Ω Z0 Z0==50Ω 50Ω Q 65 pF RL = 50Ω AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Levels Output Load Sym VCC VSS VIH VIL DOUT 5 pF 353Ω VL = 1.5V VSS to 3.0V 5ns 1.5V Figure 2 NOTE: For TEHQZ,TGHQZ and TWLQZ, Figure 3 DC ELECTRICAL CHARACTERISTICS Parameter Sym Conditions Operating Power Supply Current ICC1 Standby (TTL) Supply Current ICC2 Full Standby CMOS Supply Current ICC3 Input Leakage Current Output Leakage Current Output High Volltage Output Low Voltage ILI ILO VOH VOL W= VIL, II/O = 0mA, Min Cycle E > VIH, VIN < VIL or VIN > VIH, f=ØMHz E > VCC-0.2V VIN > VCC-0.2V or VIN < 0.2V VIN = 0V to VCC V I/O = 0V to VCC IOH = -4.0mA IOL = 4.0mA E H L L L W X H H L Mode Standby Output Deselect Read Write 2.4 10ns 450 Max Units 12-15ns 350 mA 150 150 mA 90 90 mA ±10 ±10 ±10 ±10 0.4 0.4 µA µA V V CAPACITANCE TRUTH TABLE G X H L X Min (f=1.0MHz, VIN=VCC or VSS) Output High Z High Z DOUT DIN Power ICC2,ICC3 ICC1 ICC1 ICC1 Parameter Address Lines Data Lines Write & Output Enable Lines Chip Enable Lines Sym CA CD/Q W, G EØ-E2 Max 8 10 8 8 Unit pF pF pF pF These parameters are sampled, not 100% tested. White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com 2 Aug. 2002 Rev. 0A ECO #15432 WED8L24513V AC CHARACTERISTICS READ CYCLE Symbol JEDEC Alt. TAVAV TRC TAVQV TAA TELQV TACS TELQX TCLZ TEHQZ TCHZ TAVQX TOH TGLQV TOE TGLQX TOLZ TGHQZ TOHZ Parameter Read Cycle Time Address Access Time Chip Enable Access Time Chip Enable to Output in Low Z (1) Chip Disable to Output in High Z (1) Output Hold from Address Change Output Enable to Output Valid Output Enable to Output in Low Z (1) Output Disable to Output in High Z(1) 10ns Min Max 10 10 10 3 5 3 5 0 5 12ns Min Max 12 12 12 3 6 3 6 0 6 15ns Min Max 15 15 15 3 7 3 7 0 7 Units ns ns ns ns ns ns ns ns ns NOTE 1: Parameter is guaranteed, but not tested. FIG. 4 READ CYCLE 1 - W HIGH, G, E LOW tAVAV A ADDRESS 1 ADDRESS 2 tAVQV tAVQX Q FIG. 5 DATA 1 DATA 2 READ CYCLE 2 - W HIGH tAVAV A tAVQV E tELQV tELQX tEHQZ tGLQV tGHQZ G tGLQX Q Aug. 2002 Rev. 0A ECO #15432 3 White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com WED8L24513V AC CHARACTERISTICS WRITE CYCLE Symbol JEDEC Alt. TAVAV TWC TELWH TCW TELEH TCW Address Setup Time TAVWL TAS TAVEL TAS Address Valid to End of Write TAVWH TAW TAVEH TAW Write Pulse Width TWLWH TWP TWLEH TWP Write Recovery Time TWHAX TWR TEHAX TWR Data Hold Time TWHDX TDH TEHDX TDH Write to Output in High Z (1) TWLQZ TWHZ Data to Write Time TDVWH TDW TDVEH TDW Output Active from End of Write (1)TWHQX TWLZ Parameter Write Cycle Time Chip Enable to End of Write 10ns Min Max 10 8 8 0 0 8 8 8 8 0 0 0 0 0 5 6 6 3 12ns Min Max 12 9 9 0 0 9 9 10 10 0 0 0 0 0 6 6 6 3 15ns Min Max 15 9 9 0 0 10 10 11 11 0 0 0 0 0 7 7 7 3 Units ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns NOTE 1: Parameter is guaranteed, but not tested. FIG. 6 WRITE CYCLE 1 - W CONTROLLED tAVAV A tAVWH tELWH tWHAX E tAVWL tWLWH W tDVWH D DATA VALID tWLQZ tWHQX HIGH Z Q White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com tWHDX 4 Aug. 2002 Rev. 0A ECO #15432 WED8L24513V FIG. 7 WRITE CYCLE 2 - E CONTROLLED tAVAV A tAVEH tELEH tEHAX E tAVEL tWLEH W tDVEH D tEHDX DATA VALID HIGH Z Q ORDERING INFORMATION Commercial (0°C to +70°C) Industrial (-40°C to +85°C) Part Number Speed (ns) 10 12 15 WED8L24513V10BC WED8L24513V12BC WED8L24513V15BC PACKAGE NO. 391 119 LEAD BGA JEDEC MO-163 Part Number Package No. 391 391 391 Speed (ns) 12 15 WED8L24513V12BI WED8L24513V15BI 0.110 MAX 7.62 (0.300) TYP Package No. 391 391 14.00 (0.551) TYP R 1.52 (0.062) MAX (4x) A B A1 CORNER C D E F 1.27 (0.050) TYP G 20.32 (0.800) TYP H 22.00 (0.866) TYP J K L M N P R T U 0.711 (0.028) MAX 1.27 (0.050) TYP ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES Aug. 2002 Rev. 0A ECO #15432 5 White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com WED8L24513V FIG. 8 INTERFACING THE MOTOROLA DSP5630x DSP FAMILY WITH THE WED8L24513V (512K x 24) WED8L24513V (512K x 24) A18-0 E Address Bus A23-0 DQ0-23 W G AA0 AA1 AA2 WED8L24513V AA3 Motorola DSP5630x (512K x 24) A18-0 WR E RD DQ0-23 W G WED8L24513V (512K x 24) Databus D23-0 A18-0 E DQ0-23 W G Notes: 1. In this example three 512K x 24 external memory arrays are shown, one for X data, one for Y data and one for Program. Specific applications may require one, two, or all three arrays. 2. Any combination of AA0-AA3 may be used as chip selects. However, each chip select may only be used to select one memory array. FIG. 9 INTERFACING THE ANALOG DEVICES 2106xL DSP FAMILY WITH THE WED8L24513V (512K x 24) WED8L24513V Address Bus A31-0 (512K x 24) A18-0 DQ16-23 DQ8-15 DQ0-7 E W G MSX Analog ADSP-2106xL WR RD WED8L24513V (512K x 24) A18-0 E W DQ16-23 DQ8-15 DQ0-7 G Databus D47-0 White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com 6 Aug. 2002 Rev. 0A ECO #15432