74VCXH16373 Low-Voltage 1.8/2.5/3.3V 16-Bit Transparent Latch With 3.6V–Tolerant Inputs and Outputs (3–State, Non–Inverting) The 74VCXH16373 is an advanced performance, non–inverting 16–bit transparent latch. It is designed for very high–speed, very low–power operation in 1.8V, 2.5V or 3.3V systems. The VCXH16373 is byte controlled, with each byte functioning identically, but independently. Each byte has separate Output Enable and Latch Enable inputs. These control pins can be tied together for full 16–bit operation. When operating at 2.5V (or 1.8V) the part is designed to tolerate voltages it may encounter on either inputs or outputs when interfacing to 3.3V busses. It is guaranteed to be over–voltage tolerant to 3.6V. The 74VCXH16373 contains 16 D–type latches with 3–state 3.6V–tolerant outputs. When the Latch Enable (LEn) inputs are HIGH, data on the Dn inputs enters the latches. In this condition, the latches are transparent, (a latch output will change state each time its D input changes). When LE is LOW, the latch stores the information that was present on the D inputs a setup time preceding the HIGH–to–LOW transition of LE. The 3–state outputs are controlled by the Output Enable (OEn) inputs. When OE is LOW, the outputs are enabled. When OE is HIGH, the standard outputs are in the high impedance state, but this does not interfere with new data entering into the latches. The data inputs include active bushold circuitry, eliminating the need for external pull–up resistors to hold unused or floating inputs at a valid logic state. • Designed for Low Voltage Operation: VCC = 1.65–3.6V • 3.6V Tolerant Inputs and Outputs • High Speed Operation: 3.0ns max for 3.0 to 3.6V • • • • • • • 3.9ns max for 2.3 to 2.7V 6.8ns max for 1.65 to 1.95V Static Drive: ±24mA Drive at 3.0V ±18mA Drive at 2.3V ±6mA Drive at 1.65V Supports Live Insertion and Withdrawal Includes Active Bushold to Hold Unused or Floating Inputs at a Valid Logic State IOFF Specification Guarantees High Impedance When VCC = 0V† Near Zero Static Supply Current in All Three Logic States (20µA) Substantially Reduces System Power Requirements Latchup Performance Exceeds ±250mA @ 125°C ESD Performance: Human Body Model >2000V; Machine Model >200V http://onsemi.com MARKING DIAGRAM 48 48 74VCXH16373DT 1 AWLYYWW TSSOP–48 DT SUFFIX CASE 1201 A WL YY WW 1 = Assembly Location = Wafer Lot = Year = Work Week PIN NAMES Pins Function OEn LEn D0–D15 O0–O15 Output Enable Inputs Latch Enable Inputs Inputs Outputs ORDERING INFORMATION Device Package Shipping 74VCXH16373DT TSSOP 39 / Rail 74VCXH16373DTR TSSOP 2500 / Reel †NOTE: To ensure the outputs activate in the 3–state condition, the output enable pins should be connected to VCC through a pull–up resistor. The value of the resistor is determined by the current sinking capability of the output connected to the OE pin. Semiconductor Components Industries, LLC, 2001 January, 2001 – Rev. 1 1 Publication Order Number: 74VCXH16373/D 74VCXH16373 OE1 1 O0 2 48 LE1 47 D0 O1 3 GND 4 O2 5 46 D1 45 GND OE1 LE1 D0 44 D2 43 D3 O3 6 VCC 7 42 VCC 41 D4 O4 8 O5 9 40 D5 39 GND GND 10 O6 11 38 D6 37 D7 O7 12 O8 13 36 D8 35 D9 O9 14 GND 15 O10 16 34 GND 33 D10 O11 17 VCC 18 32 D11 31 VCC O12 19 O13 20 30 D12 29 D13 GND 21 O14 22 28 GND 27 D14 O15 23 OE2 24 26 D15 25 LE2 Figure 1. 48–Lead Pinout (Top View) D1 D2 D3 D4 D5 D6 D7 1 OE2 48 LE2 nLE 47 D nLE 46 D nLE 44 D nLE 43 D nLE 41 D nLE 40 D nLE 38 D nLE 37 D 2 Q 3 Q 5 Q 6 Q 8 Q 9 Q 11 Q 12 Q O0 24 25 36 D8 O1 35 D9 O2 33 D10 O3 32 D11 O4 30 D12 O5 29 D13 O6 27 D14 O7 26 D15 nLE D nLE D nLE D nLE D nLE D nLE D nLE D nLE D 13 Q 14 Q 16 Q 17 Q 19 Q 20 Q 22 Q 23 Q O8 O9 O10 O11 O12 O13 O14 O15 Figure 2. Logic Diagram 1 OE1 LE1 48 25 LE2 24 OE2 D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 D12 D13 D14 D15 EN1 EN2 EN3 EN4 47 46 44 43 41 40 38 37 36 35 33 32 30 29 27 26 1 1∇ 1 2∇ 1 3∇ 1 4∇ 2 3 5 6 8 9 11 12 13 14 16 17 19 20 22 23 O0 O1 O2 O3 O4 O5 O6 O7 O8 O9 O10 O11 O12 O13 O14 O15 Figure 3. IEC Logic Diagram Inputs Outputs Inputs Outputs LE1 OE1 D0:7 O0:7 LE2 OE2 D8:15 O8:15 X H X Z X H X Z H L L L H L L L H L H H H L H H L L X O0 L L X O0 H = High Voltage Level; L = Low Voltage Level; Z = High Impedance State; X = High or Low Voltage Level and Transitions Are Acceptable, for ICC reasons, DO NOT FLOAT Inputs. O0 = No Change. http://onsemi.com 2 74VCXH16373 ABSOLUTE MAXIMUM RATINGS* Symbol Parameter VCC DC Supply Voltage VI VO Value Condition Unit –0.5 to +4.6 V DC Input Voltage –0.5 ≤ VI ≤ +4.6 V DC Output Voltage –0.5 ≤ VO ≤ +4.6 Output in 3–State V –0.5 ≤ VO ≤ VCC + 0.5 Note 1.; Outputs Active V IIK DC Input Diode Current –50 VI < GND mA IOK DC Output Diode Current –50 VO < GND mA +50 VO > VCC mA IO DC Output Source/Sink Current ±50 mA ICC DC Supply Current Per Supply Pin ±100 mA IGND DC Ground Current Per Ground Pin ±100 mA TSTG Storage Temperature Range –65 to +150 °C * Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. 1. IO absolute maximum rating must be observed. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Operating Data Retention Only Min Typ Max Unit 1.65 1.2 3.3 3.3 3.6 3.6 V –0.3 3.6 V 0 0 VCC 3.6 V VCC Supply Voltage VI Input Voltage VO Output Voltage IOH HIGH Level Output Current, VCC = 3.0V – 3.6V –24 mA IOL LOW Level Output Current, VCC = 3.0V – 3.6V 24 mA IOH HIGH Level Output Current, VCC = 2.3V – 2.7V –18 mA IOL LOW Level Output Current, VCC = 2.3V – 2.7V 18 mA IOH HIGH Level Output Current, VCC = 1.65 – 1.95V –6 mA IOL LOW Level Output Current, VCC = 1.65 – 1.95V 6 mA TA Operating Free–Air Temperature –40 +85 °C ∆t/∆V Input Transition Rise or Fall Rate, VIN from 0.8V to 2.0V, VCC = 3.0V 0 10 ns/V (Active State) (3–State) http://onsemi.com 3 74VCXH16373 DC ELECTRICAL CHARACTERISTICS TA = –40°C to +85°C Symbol VIH VIL VOH VOL Condition Min HIGH Level Input Voltage (Note 2.) 1.65V ≤ VCC < 2.3V 0.65 x VCC 2.3V ≤ VCC ≤ 2.7V 1.6 2.7V < VCC ≤ 3.6V 2.0 LOW Level Input Voltage (Note 2.) HIGH Level Output Voltage LOW Level Output Voltage II Input Leakage Current II(HOLD) ( ) Minimum Bushold Input Current II ((OD)) Minimum Bushold Over–Drive C Current tN Needed d d tto Ch Change St State t IOZ 3–State Output Current IOFF Power–Off Leakage Current ICC Quiescent Supply Current (Note 5.) ∆ICC 2. 3. 4. 5. Characteristic Increase in ICC per Input Max V 1.65V ≤ VCC < 2.3V 0.35 x VCC 2.3V ≤ VCC ≤ 2.7V 0.7 2.7V < VCC ≤ 3.6V 0.8 1.65V ≤ VCC ≤ 3.6V; IOH = –100µA VCC – 0.2 VCC = 1.65V; IOH = –6mA 1.25 VCC = 2.3V; IOH = –6mA 2.0 VCC = 2.3V; IOH = –12mA 1.8 VCC = 2.3V; IOH = –18mA 1.7 VCC = 2.7V; IOH = –12mA 2.2 VCC = 3.0V; IOH = –18mA 2.4 VCC = 3.0V; IOH = –24mA 2.2 0.2 VCC = 1.65V; IOL = 6mA 0.3 VCC = 2.3V; IOL = 12mA 0.4 VCC = 2.3V; IOL = 18mA 0.6 VCC = 2.7V; IOL = 12mA 0.4 VCC = 3.0V; IOL = 18mA 0.4 VCC = 3.0V; IOL = 24mA 0.55 1.65V ≤ VCC ≤ 3.6V; 0V ≤ VI ≤ 3.6V ±5.0 75 VCC = 3.0V, VIN = 2.0V –75 VCC = 2.3V, VIN = 0.7V 45 VCC = 2.3V, VIN = 1.6V –45 VCC = 1.65V, VIN = 0.57V 25 VCC = 1.65V, VIN = 1.07V –25 VCC = 3.6V, (Note 3.) 450 VCC = 3.6V, (Note 4.) –450 VCC = 2.7V, (Note 3.) 300 VCC = 2.7V, (Note 4.) –300 VCC = 1.95V, (Note 3.) 200 VCC = 1.95V, (Note 4.) –200 V V 1.65V ≤ VCC ≤ 3.6V; IOL = 100µA VCC = 3.0V, VIN = 0.8V Unit V µA µA µA 1.65V ≤ VCC ≤ 3.6V; 0V ≤ VO ≤ 3.6V; VI = VIH or VIL ±10 µA VCC = 0V; VI or VO = 3.6V 10 µA 1.65V ≤ VCC ≤ 3.6V; VI = GND or VCC 20 µA 1.65V ≤ VCC ≤ 3.6V; 3.6V ≤ VI, VO ≤ 3.6V ±20 µA 2.7V < VCC ≤ 3.6V; VIH = VCC – 0.6V 750 µA These values of VI are used to test DC electrical characteristics only. An external driver must source at least the specified current to switch from LOW–to–HIGH. An external driver must source at least the specified current to switch from HIGH–to–LOW. Outputs disabled or 3–state only. http://onsemi.com 4 74VCXH16373 AC CHARACTERISTICS (Note 6.; tR = tF = 2.0ns; CL = 30pF; RL = 500Ω) Limits TA = –40°C to +85°C VCC = 3.0V to 3.6V Symbol Parameter VCC = 2.3V to 2.7V VCC = 1.65 to 1.95V Waveform Min Max Min Max Min Max Unit tPLH tPHL Propagation Delay Dn to On 1 0.8 0.8 3.0 3.0 1.0 1.0 3.4 3.4 1.5 1.5 6.8 6.8 ns tPLH tPHL Propagation Delay LE to On 1 0.8 0.8 3.0 3.0 1.0 1.0 3.9 3.9 1.5 1.5 7.8 7.8 ns tPZH tPZL Output Enable Time to High and Low Level 2 0.8 0.8 3.5 3.5 1.0 1.0 4.6 4.6 1.5 1.5 9.2 9.2 ns tPHZ tPLZ Output Disable Time From High and Low Level 2 0.8 0.8 3.5 3.5 1.0 1.0 3.8 3.8 1.5 1.5 6.8 6.8 ns ts Setup Time, High or Low Dn to LE 3 1.5 1.5 2.5 ns th Hold Time, High or Low Dn to LE 3 1.0 1.0 1.0 ns tw LE Pulse Width, High 3 1.5 1.5 4.0 ns tOSHL tOSLH Output–to–Output Skew (Note 7.) 0.5 0.5 0.5 0.5 0.75 0.75 ns 6. For CL = 50pF, add approximately 300ps to the AC maximum specification. 7. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device. The specification applies to any outputs switching in the same direction, either HIGH–to–LOW (tOSHL) or LOW–to–HIGH (tOSLH); parameter guaranteed by design. DYNAMIC SWITCHING CHARACTERISTICS TA = +25°C Symbol VOLP VOLV VOHV Characteristic Condition Typ Unit Dynamic LOW Peak Voltage VCC = 1.8V, CL = 30pF, VIH = VCC, VIL = 0V 0.25 V (Note 8.) VCC = 2.5V, CL = 30pF, VIH = VCC, VIL = 0V 0.6 VCC = 3.3V, CL = 30pF, VIH = VCC, VIL = 0V 0.8 Dynamic LOW Valley Voltage VCC = 1.8V, CL = 30pF, VIH = VCC, VIL = 0V –0.25 (Note 8.) VCC = 2.5V, CL = 30pF, VIH = VCC, VIL = 0V –0.6 VCC = 3.3V, CL = 30pF, VIH = VCC, VIL = 0V –0.8 Dynamic HIGH Valley Voltage VCC = 1.8V, CL = 30pF, VIH = VCC, VIL = 0V 1.5 (Note 9.) VCC = 2.5V, CL = 30pF, VIH = VCC, VIL = 0V 1.9 VCC = 3.3V, CL = 30pF, VIH = VCC, VIL = 0V 2.2 V V 8. Number of outputs defined as “n”. Measured with “n–1” outputs switching from HIGH–to–LOW or LOW–to–HIGH. The remaining output is measured in the LOW state. 9. Number of outputs defined as “n”. Measured with “n–1” outputs switching from HIGH–to–LOW or LOW–to–HIGH. The remaining output is measured in the HIGH state. CAPACITIVE CHARACTERISTICS Symbol Parameter Condition Typical Unit CIN Input Capacitance Note 10. 6 pF COUT Output Capacitance Note 10. 7 pF CPD Power Dissipation Capacitance Note 10., 10MHz 20 pF 10. VCC = 1.8, 2.5 or 3.3V; VI = 0V or VCC. http://onsemi.com 5 74VCXH16373 VIH Vm Dn Vm 0V tPLH tPHL Vm On VOH Vm VOL WAVEFORM 1 - PROPAGATION DELAYS tR = tF = 2.0ns, 10% to 90%; f = 1MHz; tW = 500ns Figure 4. AC Waveforms VIH Vm OEn VIH Dn Vm Vm Vm 0V tPZH tPHZ VOH Vy Vm On 0V ts LEn tw Vm On tPLZ ≈ VCC Vm tPLH, tPHL On VOH Vm Vm VOL Vx VOL WAVEFORM 3 - LE to On PROPAGATION DELAYS, LE MINIMUM PULSE WIDTH, Dn to LE SETUP AND HOLD TIMES tR = tF = 2.0ns, 10% to 90%; f = 1MHz; tW = 500ns except when noted WAVEFORM 2 - OUTPUT ENABLE AND DISABLE TIMES tR = tF = 2.0ns, 10% to 90%; f = 1MHz; tW = 500ns Figure 5. AC Waveforms VCC Symbol 3.3V ±0.3V 2.5V ±0.2V 1.8V ±0.15V VIH 2.7V VCC VCC Vm 1.5V VCC/2 VCC/2 Vx VOL + 0.3V VOL + 0.15V VOL + 0.15V Vy VOH – 0.3V VOH – 0.15V VOH – 0.15V VCC PULSE GENERATOR VIH 0V ≈ 0V tPZL th RL DUT RT CL RL SWITCH TEST tPLH, tPHL Open tPZL, tPLZ 6V at VCC = 3.3 ±0.3V; VCC× 2 at VCC = 2.5 ±0.2V; 1.8V ±0.15V tPZH, tPHZ GND CL = 30pF or equivalent (Includes jig and probe capacitance) RL = 500Ω or equivalent RT = ZOUT of pulse generator (typically 50Ω) Figure 6. Test Circuit http://onsemi.com 6 6V or VCC × 2 OPEN GND 74VCXH16373 VIH Vm Dn Vm 0V tPLH tPHL Vm On VOH Vm VOL WAVEFORM 4 - PROPAGATION DELAYS tR = tF = 2.0ns, 10% to 90%; f = 1MHz; tW = 500ns Figure 7. AC Waveforms VIH Vm OEn VIH Dn Vm Vm Vm 0V tPZH tPHZ VOH Vy Vm On 0V ts LEn tw Vm On tPLZ ≈ VCC VIH Vm 0V ≈ 0V tPZL th tPLH, tPHL On VOH Vm Vm VOL Vx VOL WAVEFORM 6 - LE to On PROPAGATION DELAYS, LE MINIMUM PULSE WIDTH, Dn to LE SETUP AND HOLD TIMES tR = tF = 2.0ns, 10% to 90%; f = 1MHz; tW = 500ns except when noted WAVEFORM 5 - OUTPUT ENABLE AND DISABLE TIMES tR = tF = 2.0ns, 10% to 90%; f = 1MHz; tW = 500ns Figure 8. AC Waveforms VCC Symbol 3.3V ±0.3V 2.7V VIH 2.7V 2.7V Vm 1.5V 1.5V Vx VOL + 0.3V VOL + 0.3V Vy VOH – 0.3V VOH – 0.3V http://onsemi.com 7 74VCXH16373 AC CHARACTERISTICS (tR = tF = 2.0ns; CL = 50pF; RL = 500Ω) Limits TA = –40°C to +85°C VCC = 3.0V to 3.6V Symbol Parameter VCC = 2.7V Waveform Min Max Max Unit tPLH tPHL Propagation Delay Dn to On 4 1.0 1.0 3.6 3.6 Min 4.3 4.3 ns tPLH tPHL Propagation Delay LE to On 4 1.0 1.0 3.9 3.9 4.6 4.6 ns tPZH tPZL Output Enable Time to High and Low Level 5 1.0 1.0 4.7 4.7 5.7 5.7 ns tPHZ tPLZ Output Disable Time From High and Low Level 5 1.0 1.0 4.1 4.1 4.5 4.5 ns tOSHL tOSLH Output–to–Output Skew (Note 11.) 0.5 0.5 0.5 0.5 ns 11. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device. The specification applies to any outputs switching in the same direction, either HIGH–to–LOW (tOSHL) or LOW–to–HIGH (tOSLH); parameter guaranteed by design. VCC PULSE GENERATOR RL DUT RT CL TEST RL SWITCH tPLH, tPHL Open tPZL, tPLZ 6V at VCC = 3.3 ±0.3V; VCC× 2 at VCC = 2.5 ±0.2V; 1.8V ±0.15V tPZH, tPHZ GND CL = 50pF or equivalent (Includes jig and probe capacitance) RL = 500Ω or equivalent RT = ZOUT of pulse generator (typically 50Ω) Figure 9. Test Circuit http://onsemi.com 8 6V or VCC × 2 OPEN GND 74VCXH16373 P0 K t P2 D TOP COVER TAPE E A0 + K0 SEE NOTE 2 B1 10 PITCHES CUMULATIVE TOLERANCE ON TAPE ±0.2 mm (±0.008") SEE NOTE 2 F + B0 W + D1 FOR COMPONENTS 2.0 mm × 1.2 mm AND LARGER P EMBOSSMENT FOR MACHINE REFERENCE ONLY INCLUDING DRAFT AND RADII CONCENTRIC AROUND B0 CENTER LINES OF CAVITY USER DIRECTION OF FEED *TOP COVER TAPE THICKNESS (t1) 0.10 mm (0.004") MAX. R MIN. BENDING RADIUS 10° TAPE AND COMPONENTS SHALL PASS AROUND RADIUS R" WITHOUT DAMAGE EMBOSSED CARRIER 100 mm (3.937") MAXIMUM COMPONENT ROTATION EMBOSSMENT 1 mm MAX TYPICAL COMPONENT CAVITY CENTER LINE TAPE 1 mm (0.039") MAX TYPICAL COMPONENT CENTER LINE 250 mm (9.843") CAMBER (TOP VIEW) ALLOWABLE CAMBER TO BE 1 mm/100 mm NONACCUMULATIVE OVER 250 mm Figure 10. Carrier Tape Specifications EMBOSSED CARRIER DIMENSIONS (See Notes 1 and 2) Tape Size B1 Max 24mm 20.1mm (0.791") D D1 E F K P P0 P2 R T W 1.5 + 0.1mm -0.0 (0.059 +0.004" -0.0) 1.5mm Min (0.060") 1.75 ±0.1 mm (0.069 ±0.004") 11.5 ±0.10 mm (0.453 ±0.004") 11.9 mm Max (0.468") 16.0 ±0.1 mm (0.63 ±0.004") 4.0 ±0.1 mm (0.157 ±0.004") 2.0 ±0.1 mm (0.079 ±0.004") 30 mm (1.18") 0.6 mm (0.024") 24.3 mm (0.957") 1. Metric Dimensions Govern–English are in parentheses for reference only. 2. A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min to 0.50 mm max. The component cannot rotate more than 10° within the determined cavity. http://onsemi.com 9 74VCXH16373 t MAX 13.0 mm ±0.2 mm (0.512" ±0.008") 1.5 mm MIN (0.06") A 20.2 mm MIN (0.795") 50 mm MIN (1.969") FULL RADIUS G Figure 11. Reel Dimensions REEL DIMENSIONS Tape Size A Max G t Max 24 mm 360 mm (14.173") 24.4 mm + 2.0 mm, -0.0 (0.961" + 0.078", -0.00) 30.4 mm (1.197") DIRECTION OF FEED BARCODE LABEL POCKET Figure 12. Reel Winding Direction http://onsemi.com 10 HOLE 74VCXH16373 CAVITY TAPE TOP TAPE TAPE TRAILER (Connected to Reel Hub) NO COMPONENTS 160 mm MIN TAPE LEADER NO COMPONENTS 400 mm MIN COMPONENTS DIRECTION OF FEED Figure 13. Tape Ends for Finished Goods User Direction of Feed Figure 14. Reel Configuration ÉÉ ÉÉÉÉÉÉÉÉ ÉÉ ÉÉÉÉÉÉÉÉ ÉÉ ÉÉÉÉÉÉÉÉ ÉÉ ÉÉÉÉÉÉÉÉ ÉÉ ÉÉÉÉÉÉÉÉ ÉÉÉÉ ÉÉÉÉÉÉÉ ÉÉÉÉ ÉÉÉÉÉÉÉ ÉÉÉÉ ÉÉÉÉÉÉÉ ÉÉÉÉ ÉÉÉÉÉÉÉ ÉÉÉÉ ÉÉÉÉÉÉÉ K L G 48 Leads Figure 15. Package Footprint http://onsemi.com 11 F 74VCXH16373 PACKAGE DIMENSIONS TSSOP DT SUFFIX CASE 1201–01 ISSUE A 48X ÉÉÉ ÇÇÇ ÇÇÇ ÉÉÉ ÇÇÇ ÉÉÉ K K1 K REF 0.12 (0.005) M T U S V S T U S J J1 48 25 0.254 (0.010) M SECTION N–N B –U– L N 1 24 A –V– PIN 1 IDENT. N F DETAIL E D 0.076 (0.003) –T– SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 6. DIMENSIONS A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-. C M 0.25 (0.010) –W– DETAIL E DIM A B C D F G H J J1 K K1 L M MILLIMETERS MIN MAX 12.40 12.60 6.00 6.20 --1.10 0.05 0.15 0.50 0.75 0.50 BSC 0.37 --0.09 0.20 0.09 0.16 0.17 0.27 0.17 0.23 7.95 8.25 0 8 INCHES MIN MAX 0.488 0.496 0.236 0.244 --0.043 0.002 0.006 0.020 0.030 0.0197 BSC 0.015 --0.004 0.008 0.004 0.006 0.007 0.011 0.007 0.009 0.313 0.325 0 8 H G ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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