DF3A6.8FUT1 Preferred Device Zener Transient Voltage Suppressor SC−70/SOT−323 Dual Common Anode Zeners for ESD Protection http://onsemi.com These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. 1 3 2 PIN 1. CATHODE 2. CATHODE 3. ANODE Specification Features: • • SC−70 Package Allows Two Separate Unidirectional Configurations Low Leakage < 1.0 A @ 5 Volt Breakdown Voltage: 6.4−7.2 Volt @ 5.0 mA ESD Protection Meeting:16 kV Human Body Model 30 kV Contact = IEC61000−4−2 Peak Power: 24 W @ 1.0 ms (Unidirectional), per Figure 1 Peak Power: 150 W @ 20 s (Unidirectional), per Figure 2 Mechanical Characteristics: • • • • Void Free, Transfer−Molded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications Symbol Value Unit PD 200 1.6 °mW° mW/°C RθJA 618 °C/W TJ, Tstg − 55 to +150 °C Peak Power Dissipation @ 1.0 ms (Note 2) @ TA = 25°C PPK 20 W Peak Power Dissipation @ 20 s (Note 3) @ TA = 25°C PPK 150 W ESD Discharge MIL STD 883C − Method 3015−6 IEC61000−4−2, Air Discharge IEC61000−4−2, Contact Discharge VPP Steady State Power Dissipation Derate above 25°C (Note 1) Thermal Resistance Junction to Ambient Operating Junction and Storage Temperature Range 1 2 68 SC−70/SOT−323 CASE 419 STYLE 4 M = Date Code ORDERING INFORMATION MAXIMUM RATINGS Rating MARKING DIAGRAM M • • • • Device Package Shipping DF3A6.8FUT1 SC−70 3000/Tape & Reel Preferred devices are recommended choices for future use and best overall value. kV 16 30 30 1. Mounted on FR−5 Board = 1.0 X 0.75 X 0.062 in. 2. Non−repetitive pulse per Figure 1. 3. Non−repetitive pulse per Figure 2. Semiconductor Components Industries, LLC, 2003 July, 2003 − Rev. 0 1 Publication Order Number: DF3A6.8FUT1/D DF3A6.8FUT1 ELECTRICAL CHARACTERISTICS I (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Parameter Symbol VRWM IR VBR IF Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM VC VBR VRWM IT Test Current IF Forward Current VF Forward Voltage @ IF ZZT Maximum Zener Impedance @ IZT ZZK Maximum Zener Impedance @ IZK V IR VF IT Breakdown Voltage @ IT IPP Uni−Directional TVS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3) Parameter Symbol Conditions Min Typ Max Unit 0.8 0.9 V 6.8 7.2 V Forward Voltage VF IF = 10 mA Zener Voltage (Note 4) VZ IZT = 5 mA Operating Resistance (Note 5) ZZK IZK = 0.5 mA 200 Ω ZZT IZT = 5 mA 50 Ω Reverse Current IR1 VRWM = 5 V 0.5 A Clamping Voltage VC IPP = 2.0 A (Figure 1) IPP = 9.37 A (Figure 2) 9.6 V 16 V 6.4 ESD Protection kV Human Body Model (HBM) Contact − IEC61000−4−2 Air Discharge 16 30 30 4. VZ measured at pulse test current IZT at an ambient temperature of 25°C. 5. ZZT and ZZK is measured by dividing the AC voltage drop across the device by the AC current supplied. AC frequency = 1.0 kHz. http://onsemi.com 2 DF3A6.8FUT1 TYPICAL CHARACTERISTICS tr PEAK VALUE — IRSM VALUE (%) 100 50 % OF PEAK PULSE CURRENT 100 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50%OF IRSM. tr ≤ 10 s IRS HALF VALUE — 2 M tP PEAK VALUE IRSM @ 8 s tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 s 80 70 60 HALF VALUE IRSM/2 @ 20 s 50 40 30 tP 20 10 0 0 1 2 3 0 4 0 20 40 t, TIME (ms) Figure 2. 8 × 20 s Pulse Waveform 20.01 200 REVERSE VOLTAGE IS MEASURED WITH A PULSE TEST CURRENT IT AT 25°C 16.01 FORWARD VOLTAGE IS MEASURED WITH A PULSE TEST CURRENT IF AT 25°C 180 I F , FORWARD CURRENT (mA) I ZT, ZENER CURRENT (mA) 18.01 14.01 12.01 10.01 8.01 6.01 4.01 2.01 160 140 120 100 80 60 40 20 6 6.2 6.4 6.6 6.8 7 7.2 7.4 7.6 0 0.5 8 7.8 0.6 VZ, ZENER VOLTAGE (V) 0.7 0.8 0.9 1.0 1.1 1.2 VF, FORWARD VOLTAGE (V) Figure 3. Zener Voltage vs. Zener Current Figure 4. Forward Voltage vs. Forward Current 300 100 80 PD , POWER DISSIPATION (mW) f = 1 MHz TA = 25°C 90 C, CAPACITANCE (pF) 80 t, TIME (s) Figure 1. 10 × 1000 s Pulse Waveform 0 60 70 UniDirectional Pin 1/2−3 60 50 40 30 BiDirectional Pin 1−2 20 250 200 150 100 50 10 0 0 1 2 3 4 V, BIAS VOLTAGE (V) 5 0 6 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 5. Capacitance vs. Bias Voltage Figure 6. Steady State Power Derating Curve http://onsemi.com 3 175 DF3A6.8FUT1 PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE L A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 B S 1 2 D G C 0.05 (0.002) J N K H DIM A B C D G H J K L N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 STYLE 4: PIN 1. CATHODE 2. CATHODE 3. 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