ONSEMI SMF05T2G

SMF05T1
Quad Array for
ESD Protection
This quad monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment, and other applications. Its quad junction common
anode design protects four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
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MARKING
DIAGRAM
4
Specification Features
•
•
•
•
•
•
SC88A Package Allows Four Separate Unidirectional Configurations
Low Leakage < 5 mA @ 5 Volt
Breakdown Voltage: 6.1 Volt -- 7.2 Volt @ 1 mA
Low Capacitance (90 pF typical)
ESD Protection Meeting IEC61000--4--2
Pb--Free Packages are Available
5
60 MG
G
SC--88A/SOT--323
CASE 419A
STYLE 5
1
2
3
60
= Device Marking
M
= One Digit Date Code
G
= Pb--Free Package
(Note: Microdot may be in either location)
Mechanical Characteristics
•
•
•
•
Void Free, Transfer--Molded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
Cathode
Anode
Cathode
5
1
Cathode
2
4
3
Cathode
ORDERING INFORMATION
Package
Shipping†
SC--88A
3000/Tape & Reel
SMF05T1G
SC--88A
(Pb--Free)
3000/Tape & Reel
SMF05T2G
SC--88A
(Pb--Free)
3000/Tape & Reel
Device
SMF05T1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 -- Rev. 3
1
Publication Order Number:
SMF05T1/D
SMF05T1
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation @ 8 X 20 ms @TA ≤ 25°C (Note 1)
Ppk
200
W
Steady State Power -- 1 Diode (Note 2)
PD
385
mW
RθJA
325
3.1
°C/W
mW/°C
Maximum Junction Temperature
TJmax
150
°C
Operating Junction and Storage Temperature Range
TJ Tstg
--55 to +150
°C
30
30
kV
260
°C
Thermal Resistance Junction to Ambient
Above 25°C, Derate
ESD Discharge
IEC61000--4--2, Air Discharge
IEC61000--4--2, Contact Discharge
Lead Solder Temperature (10 seconds duration)
TL
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS
Breakdown Voltage
VBR @ 1 mA (Volts)
Device
Min
Max
Leakage Current
IR @ VRWM = 5 V
(mA)
SMF05
6.0
7.2
5.0
Max Clamping
Voltage (VC)
@ IPP
Max Clamping
Voltage (VC)
@ IPP
Capacitance
@ 0 V Bias
(pF)
Max
VF @ IF = 200 mA
(V)
IPP (A)
VC (V)
IPP (A)
VC (V)
90
1.25
1.0
9.5
12
12.5
1. Non--repetitive current per Figure 1. Derate per Figure 2.
2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR--4 board with min pad.
100
tr
90
% OF PEAK PULSE CURRENT
Ppk , PEAK SURGE POWER (WATTS)
1000
100
10
NOTE: Non--Repetitive Surge.
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
80
70
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tP
20
10
1
1
10
100
0
1000
0
20
40
60
t, TIME (ms)
t, TIME (ms)
Figure 1. Pulse Width
Figure 2. 8 × 20 ms Pulse Waveform
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2
80
100
100
90
90
80
80
TYPICAL CAPACITANCE (pF)
1 MHz FREQUENCY
OR CURRENT @ TA = 25 ° C
SMF05T1
70
60
50
40
30
20
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
10
0
200
0
1.0
5.0
Figure 4. Capacitance
1.0
Ipp, PEAK PULSE CURRENT (AMPS)
100
0.1
0.01
0.6
0.7
0.8
0.9
1.0
1.1
10
2.5 ms SQUARE WAVE
1.0
1.2
0
5.0
10
15
20
25
VF, FORWARD VOLTAGE (VOLTS)
VC, CLAMPING VOLTAGE (VOLTS)
Figure 5. Forward Voltage
Figure 6. Clamping Voltage versus Peak
Pulse Current (Reverse Direction)
Ipp, PEAK FORWARD PULSE CURRENT (AMPS)
IF , FORWARD CURRENT (A)
4.0
BIAS VOLTAGE (VOLTS)
Figure 3. Pulse Derating Curve
0.001
3.0
2.0
TA, AMBIENT TEMPERATURE (°C)
100
10
1.0
2.5 ms SQUARE WAVE
0.1
0
2.0
4.0
6.0
8.0
10
VC, FORWARD CLAMPING VOLTAGE (VOLTS)
Figure 7. Clamping Voltage versus Peak
Pulse Current (Forward Direction)
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3
12
30
SMF05T1
PACKAGE DIMENSIONS
SC--88A/SOT--353/SC--70
5--LEAD PACKAGE
CASE 419A--02
ISSUE J
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A--01 OBSOLETE. NEW STANDARD
419A--02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
G
5
4
--B--
S
1
2
DIM
A
B
C
D
G
H
J
K
N
S
3
D 5 PL
0.2 (0.008)
M
B
M
N
J
C
H
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
-----0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
STYLE 5:
PIN 1.
2.
3.
4.
5.
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
-----0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
CATHODE
COMMON ANODE
CATHODE 2
CATHODE 3
CATHODE 4
K
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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P.O. Box 61312, Phoenix, Arizona 85082--1312 USA
Phone: 480--829--7710 or 800--344--3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2--9--1 Kamimeguro, Meguro--ku, Tokyo, Japan 153--0051
Fax: 480--829--7709 or 800--344--3867 Toll Free USA/Canada
Phone: 81--3--5773--3850
Email: [email protected]
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4
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
SMF05T1/D