TOC Schottky Devices HIGH POWER AND GENERAL PURPOSE SCHOTTKY DIODES • • • • Fast Switching Low Turn On Voltage Low Cost Tape and Reel Available DESCRIPTION STYLE 0R TOP CONTACT: ANODE This unique mesa construction (GC9700, GC9701, and GC9702) provides high breakdown voltage with true Schottky characteristics without resorting to the use of a diffused guard ring. The GC9703 and GC9704 are planar schottky devices. The standard devices are available in glass axial leaded packages as well as in chip form. Custom package styles are available on request. STYLE 00 TOP CONTACT: ANODE STYLE 15 APPLICATIONS General high speed switching. High level mixers and detectors. Bridge quads for sampling circuits. Well suited for pulse shaping as well as limiting requirements. TABLE 1: ELECTRICAL CHARACTERISTICS AT TA=25°C P/N GC9700 GC9701 GC9702 GC9703 GC9704 CASE STYLES Vb min Ir=10 µA (V) Ct0 max f=1 MHz (pF) Vf max If=1.0 mA (mV) If min Vf=1.0 V (mA) Ir max (nA) @ Vr (V) Tl max (psec) 70 2.1 430 15 200 50 100 30 1.5 430 50 100 5 100 20 1.5 430 35 300 15 100 8 1.2 350 10* 100 1 100 5 0.8 600 10 100 1 100 0R 15 0R 00 15 0R 00 15 00 15 00 15 *If (min) for the GC9703 is measured at Vf = 0.5 V. SEMICONDUCTOR OPERATION 75 Technology Drive Lowell, MA 01851 Tel: 978-442-5600 Fax: 978-937-3748 150