ETC GC9700

TOC
Schottky Devices
HIGH POWER AND GENERAL PURPOSE SCHOTTKY DIODES
•
•
•
•
Fast Switching
Low Turn On Voltage
Low Cost
Tape and Reel Available
DESCRIPTION
STYLE 0R
TOP CONTACT:
ANODE
This unique mesa construction (GC9700, GC9701, and
GC9702) provides high breakdown voltage with true
Schottky characteristics without resorting to the use of a
diffused guard ring. The GC9703 and GC9704 are planar
schottky devices. The standard devices are available in
glass axial leaded packages as well as in chip form. Custom package styles are available on request.
STYLE 00
TOP CONTACT:
ANODE
STYLE 15
APPLICATIONS
General high speed switching. High level mixers and detectors. Bridge quads for sampling circuits. Well suited
for pulse shaping as well as limiting requirements.
TABLE 1: ELECTRICAL CHARACTERISTICS AT TA=25°C
P/N
GC9700
GC9701
GC9702
GC9703
GC9704
CASE
STYLES
Vb min
Ir=10 µA
(V)
Ct0 max
f=1 MHz
(pF)
Vf max
If=1.0 mA
(mV)
If min
Vf=1.0 V
(mA)
Ir max
(nA)
@ Vr
(V)
Tl max
(psec)
70
2.1
430
15
200
50
100
30
1.5
430
50
100
5
100
20
1.5
430
35
300
15
100
8
1.2
350
10*
100
1
100
5
0.8
600
10
100
1
100
0R
15
0R
00
15
0R
00
15
00
15
00
15
*If (min) for the GC9703 is measured at Vf = 0.5 V.
SEMICONDUCTOR OPERATION
75 Technology Drive • Lowell, MA 01851 • Tel: 978-442-5600 • Fax: 978-937-3748
150