Beam Lead Schottky Diode Pairs for Mixers and Detectors Technical Data HSCH-5500 Series Features • Monolithic Pair Closely Matched Electrical Parameters • Low Capacitance 0.1 pF Maximum at 0 Volts • Low Noise Figure Typical 7.5 dB at 26 GHz • Rugged Construction 4 Grams Minimum Lead Pull • Platinum Tri-Metal System High Temperature Stability • Polyimide Scratch Protection • Silicon Nitride Passivation Stable, Reliable Performance Outline 04B 540 (21.0) 480 (19.0) 220 (9.0) 180 (7.0) 220 (9.0) 180 (6.0) CATHODE 120 (5.0) 90 (3.5) 250 (10.0) 200 (8.0) GOLD BEAMS 190 (7.0) 160 (6.0) GLASS 12 (0.5) 8 (0.3) PLATINUM METALLIZATION GLASS 60 (2.4) 40 (1.5) Description These dual beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminants which could otherwise lead to IR drift. The Agilent beam lead process allows for large beam anchor pads for rugged construction (typical 6 gram pull strength) without degrading capacitance. CATHODE ANODE COMMON DIMENSIONS IN µm (1/1000 inch) Maximum Ratings (for Each Diode) Pulse Power Incident at TA = 25°C .......................................................... 1 W Pulse Width = 1 µs, Du = 0.001 CW Power Dissipation at TA = 25°C ................................................ 150 mW Measured in an infinite heat sink derated linearly to zero at maximum rated temperature TOPR – Operating Temperature Range ...............................-65°C to +175 °C TSTG – Storage Temperature Range ....................................-65°C to +200°C Minimum Lead Strength ........................................ 4 grams pull on any lead Diode Mounting Temperature ................................. 350°C for 10 sec. max. These diodes are ESD sensitive. Handle with care to avoid static discharge through the diode. 2 Applications Assembly Techniques These dual beam leads are intended for use in balanced mixers and in even harmonic antiparallel pair mixers. By using several of these devices in the proper configuration it is easy to assemble bridge quads, star quads, and ring quads for Class I, II, or III type double balanced mixers. The beam lead diode is ideally suited for use in stripline or microstrip or coplanar waveguide circuits. Its small physical size and uniform dimensions give it low parasitics and repeatable RF characteristics through K-band. Thermocompression bonding is recommended. Welding or conductive epoxy may also be used. For additional information see Application Note 979, “The Handling and Bonding of Beam Lead Devices Made Easy,” or Application Note 993, “Beam Lead Device Bonding to Soft Substrates.” Electrical Specifications for DC Tested Diodes at TA = 25°C Part Number HSCH-[1] 5511 Barrier Minimum Breakdown Voltage VBR (V) Maximum Dynamic Resistance RD (Ω) Max. ∆RD (Ω) Maximum Total Capacitance CT (pF) Max. ∆CT (pF) Maximum Forward Voltage VF (mV) Max. ∆VF (mV) Max. IR (nA) Medium 4 20 3 0.10 0.02 500 10 100 16 2 0.15 0.03 20 3 0.10 0.02 5512 5531 Low Test Conditions IR = 10 µA IF = 5 mA 375 VR = 0 V f = 1 MHz IF = 1 mA 400 VR = 1 V Note: 1. Standard Hi-Rel program available on HSCH-5511 and HSCH-5531. Others are available upon request. Typical Detector Characteristics at TA = 25°C Medium Barrier and Low Barrier (DC Bias) Parameter Symbol Typical Value Units Test Conditions Tangential Sensitivity TSS -55 dBm Voltage Sensitivity γ 9.0 mV/µW Video Resistance RV 1350 Ω 20 µA Bias, Zero Bias, Pin = -40 dBm, RL = 100 KΩ Video Bandwidth = 2 MHz f = 10 GHz Parameter Symbol Typical Value Units Test Conditions Tangential Sensitivity TSS -46 dBm Voltage Sensitivity γ 17 mV/µW Video Resistance RV 1.4 MΩ Zero Bias, Zero Bias, Pin = -30 dBm, RL = 10 MΩ Video Bandwidth = 2 MHz f = 10 GHz Low Barrier (Zero Bias) 3 SPICE Parameters Parameter Units HSCH-5512 HSCH-5511 HSCH-5531 BV CJ0 EG IBV IS N RS PB PT M V pF eV A A 5 0.13 0.69 10E - 5 3 x 10E - 10 1.08 9 0.65 2 0.5 5 0.09 0.69 10E - 5 3 x 10E - 10 1.08 13 0.65 2 0.5 5 0.09 0.69 10E - 5 4 x 10E - 8 1.08 13 0.5 2 0.5 Ω V Typical Parameters 100 10 1 0.1 1 0.1 0.01 1.0 0.25 pF 5.5 5.0 0 0.2 0.4 0.6 0.8 0 2 FORWARD VOLTAGE (V) FORWARD VOLTAGE (V) 3. 0 20 µA 50 µA 0.2 0.2 10.0 5. .0 10 0.2 0 5. 0.2 10 10 .0 5.0 3.0 2.0 1.0 2 1.0 10 .0 10 0.5 28 0 150 µA 26 GHz 20 0.5 0 5. 2 0.2 26 2.0 2.0 26 GHz 0 5. 0 0 3. 2.0 5 1.0 0. 2.0 1.0 Figure 4. Typical Admittance Characteristics with 1 mA Self Bias. HSCH-5511 and -5331. 3. 0. 5 24 1.0 1.0 5 5 0. 0. 18 10 0.2 8 12 16 20 9.375 FREQUENCY (GHz) Figure 3. Typical Noise Figure vs. Frequency. Figure 2. Typical Forward Characteristics for Low Barrier Beam Lead Diodes. HSCH-553X Series, Figure 1. Typical Forward Characteristics for Medium Barrier Beam Lead Diodes. HSCH-551X Series. 4 0 0.8 6.0 3. 0.6 0.15 pF 5.0 0.4 6.5 10.0 .0 0.2 0.1 pF 3.0 0 7.0 10 2.0 0.01 7.5 +125°C +25°C -55°C NOISE FIGURE (dB) +125°C +25°C -55°C FORWARD CURRENT (mA) FORWARD CURRENT (mA) 100 Figure 5. Typical Admittance Characteristics with External Bias. HSCH-5511 and -5531. 4 1.0 Typical Parameters, continued 0.2 3. 0 3. 0 10 0.2 0 5. 10 2.0 2.0 1.0 20 µA 50 µA 150 µA 18 GHz 5 0. 5 0. 1 mA 1.5 mA 3 mA 18 GHz 0 5. .0 .0 10.0 10 .0 10 5.0 3.0 2.0 0.5 0.2 2 1.0 10 10.0 .0 5.0 3.0 2.0 1.0 0.2 0.5 10 2 0.2 0 5. 0.2 0 5. 0 2.0 5 0. 1.0 1.0 0. 2.0 5 3. 0 3. Figure 7. Typical Admittance Characteristics with External Bias. HSCH-5512. 20 µA 50 µA 150 µA 12 GHz 3. 0 5. .0 10 10.0 .0 5.0 3.0 2.0 1.0 0.5 0.2 0.2 0 5. 0.2 10 10 5.0 .0 10 2 10.0 .0 3.0 2.0 1.0 2 0.5 0 0 3. 6 0.2 0 5. 0.2 2.0 2.0 5 12 GHz 1 mA 1.5 mA 3 mA 0. 5 0. 0.2 1.0 1.0 Figure 6. Typical Admittance Characteristics with Self Bias. HSCH-5512. 0 5. 0 0 2.0 5 0. 1.0 1.0 0. 2.0 5 3. 3. Figure 8. Typical Admittance Characteristics with Self Bias. HSCH-5536. Figure 9. Typical Admittance Characteristics with External Bias. HSCH-5536. 5 Models for Each Beam Lead Schottky Diode HSCH-5511, -5531 1 mA Self Bias 0.03 pF 0.1 nH 0.04 nH 11 Ω 267 Ω 0.11 pF HSCH-5512 Self Bias 0.02 pF 0.1 nH Rj Rs Cj 1.0 mA Self Bias Part Number HSCH-5512 1.5 mA Self Bias 3.0 mA Self Bias R1 (Ω) R2 (Ω) C (pF) R1 (Ω) R2 (Ω) C (pF) R1 (Ω) R2 (Ω) C (pF) 5.0 393 0.11 5.2 232 0.11 5.0 150 0.12 Models for Each Beam Lead Schottky Diode, continued HSCH-5511, -5531 External Bias 0.03 pF 0.1 nH Rj 0.04 nH 11 Ω Cj 20 µA DC Bias Part Numbers HSCH-5511, -5531 50 µA DC Bias 150 µA DC Bias Rj (Ω) Cj (pF) Rj (Ω) Cj (pF) Rj (Ω) Cj (pF) 1400 0.09 560 0.09 187 0.10 HSCH-5512 External Bias 0.02 pF 0.1 nH Rs Rj Cj 20 µA DC Bias Part Numbers HSCH-5512 50 µA DC Bias 150 µA DC Bias RS (Ω) Rj (Ω) Cj (pF) RS (Ω) Rj (Ω) Cj (pF) RS (Ω) Rj (Ω) Cj (pF) 2.8 1240 0.11 4.7 550 0.12 2.7 180 0.13 www.semiconductor.agilent.com Data subject to change. Copyright © 1999 Agilent Technologies Obsoletes 5954-2224 5965-8850E (11/99)