TOSHIBA SSM6L12TU

SSM6L12TU
TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type
SSM6L12TU
High-Speed Switching Applications
•
Low ON-resistance
Q1: RDS(ON) = 180mΩ (max) (@VGS = 2.5 V)
Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V)
Unit: mm
2.1±0.1
Q1 Absolute Maximum Ratings (Ta = 25°C)
Unit
Drain-source voltage
VDS
30
V
Gate-source voltage
VGSS
± 12
V
DC
ID
0.5
Pulse
IDP
1.5
A
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
-20
V
Gate-source voltage
VGSS
± 12
V
DC
ID
-0.5
Pulse
IDP
-1.5
Drain current
A
Absolute Maximum Ratings (Q1,Q2 Common)
(Ta = 25°C)
Characteristics
Power dissipation
Symbol
Rating
Unit
PD
500
mW
(Note 1)
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
1
6
2
5
3
4
0.7±0.05
Drain current
0.65 0.65
Rating
2.0±0.1
Symbol
1.3±0.1
Characteristics
1.7±0.1
1.Source1
2.Gate1
3.Drain2
+0.1
0.3-0.05
Optimum for high-density mounting in small packages
+0.06
0.16-0.05
•
4.Source2
5.Gate2
6.Drain1
UF6
JEDEC
―
JEITA
―
TOSHIBA
2-2T1B
Weight: 7.0 mg (typ.)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Mounted on FR4 board. (total dissipation)
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
Marking
6
Equivalent Circuit (top view)
5
4
6
2
4
Q1
K9
1
5
Q2
3
1
2
1
3
2010-02-15
SSM6L12TU
Q1 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Gate leakage current
Min
Typ.
Max
Unit
VGS = ±12 V, VDS = 0
⎯
⎯
±1
μA
V (BR) DSS
ID = 1 mA, VGS = 0
30
⎯
⎯
V (BR) DSX
ID = 1 mA, VGS = −12 V
18
⎯
⎯
IGSS
Drain-source breakdown voltage
Test Condition
V
VDS = 30 V, VGS = 0
⎯
⎯
1
μA
Vth
VDS = 3 V, ID = 0.1 mA
0.5
⎯
1.1
V
Forward transfer admittance
⏐Yfs⏐
VDS = 3 V, ID = 0.25 A
(Note 2)
1.0
2.0
⎯
S
Drain-source on-resistance
RDS (ON)
ID = 0.50 A, VGS = 4.5 V
(Note 2)
⎯
120
145
ID = 0.25 A, VGS = 2.5 V
(Note 2)
⎯
140
180
Drain cut-off current
IDSS
Gate threshold voltage
mΩ
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
245
⎯
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
33
⎯
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0, f = 1 MHz
⎯
41
⎯
pF
Switching time
Note 2:
Turn-on time
ton
VDD = 10 V, ID = 0.25 A,
⎯
9
⎯
Turn-off time
toff
VGS = 0 to 2.5 V, RG = 4.7 Ω
⎯
15
⎯
ns
Pulse test
Switching Time Test Circuit
(a) Test Circuit
(b) VIN
2.5 V
OUT
2.5 V
90%
IN
0V
RG
0
10 μs
VDD
(c) VOUT
VDD = 10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
10%
VDD
VDS (ON)
90%
10%
tr
ton
tf
toff
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID=100 μA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration when using the device.
2
2010-02-15
SSM6L12TU
Q2 Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Min
Typ.
Max
Unit
VGS = ± 12V, VDS = 0
⎯
⎯
±1
μA
V (BR) DSS
ID = -1 mA, VGS = 0
-20
⎯
⎯
V (BR) DSX
ID = -1 mA, VGS = +12 V
-8
⎯
⎯
Gate leakage current
IGSS
Drain-source breakdown voltage
Drain cut-off current
IDSS
Test Condition
VDS = -20 V, VGS = 0
⎯
⎯
-1
μA
-0.5
⎯
-1.1
V
(Note 3)
0.65
1.3
⎯
S
ID = -0.25 A, VGS = -4 V
(Note 3)
⎯
210
260
ID = -0.25 A, VGS = -2.5 V
(Note 3)
⎯
310
430
Vth
VDS = -3 V, ID = -0.1 mA
Forward transfer admittance
⏐Yfs⏐
VDS = -3 V, ID = -0.25 A
Drain-source on-resistance
RDS (ON)
Gate threshold voltage
V
mΩ
Input capacitance
Ciss
VDS = -10 V, VGS = 0, f = 1 MHz
⎯
218
⎯
pF
Reverse transfer capacitance
Crss
VDS = -10 V, VGS = 0, f = 1 MHz
⎯
42
⎯
pF
Output capacitance
Coss
VDS = -10 V, VGS = 0, f = 1 MHz
⎯
52
⎯
pF
Switching time
Note3:
Turn-on time
ton
VDD = -10 V, ID = -0.25 A,
⎯
16
⎯
Turn-off time
toff
VGS = 0 to -2.5 V, RG = 4.7 Ω
⎯
15
⎯
ns
Pulse test
Switching Time Test Circuit
(a) Test circuit
0
OUT
(b) VIN
0V
90%
IN
RG
−2.5V
10 μs
VDD
10%
−2.5 V
RL
(c) VOUT
VDD = -10 V
RG = 4.7 Ω
Duty ≤ 1%
VIN: tr, tf < 5 ns
Common Source
Ta = 25°C
VDS (ON)
90%
10%
VDD
tr
ton
tf
toff
Precaution
Vth can be expressed as the voltage between gate and source when the low operating current value is ID=-100 μA for
this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower
voltage than Vth.
(The relationship can be established as follows: VGS (off) < Vth < VGS (on))
Please take this into consideration when using the device.
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Thermal resistance Rth (ch-a) and power dissipation PD vary depending on board material, board area, board thickness
and pad area. When using this device, please take heat dissipation into consideration
3
2010-02-15
SSM6L12TU
Q1(Nch MOS FET)
1.8
10000
1.8
1.6
1.6
1000
1000
1000
Drain current ID (mA)
2.0
2.0
3.0
3.0
4.0
4.0
5.0
1200
1200
VGS=1.4V
VGS=1.4V
5.0
800
800
600
600
400
400
Common Source
Common
Ta=25℃
Common Source
Source
Ta=25°C
Pulse
test
Ta=25°C
200
200
0
0
100
Ta=100°C
10
25°C
1
-25°C
0.1
0.2
0.4
0.6
0.8
0.2
0.4
0.6
0.8
Drain-Source
Drain-Sourcevoltage
voltage VDS
VDS(V)
(V)
VDS=3V
Common Source
VDS=3V
Pulse
test
11
0
RDS(ON) - ID
200
160
Pulse test
2.5V
140
120
VGS=4.5V
100
80
60
40
RDS(ON) - VGS
350
CommonSource
Source
Common
ID=500mA
ID=500mA
300
Pulse test
250
200
25°C
150
100
Ta=100°C
-25°C
0
0
0
200
0
400 600 800 1000 1200 1400 1600
Drain current ID (mA)
RDS(ON) - Ta
400
1
CommonSource
Source
Common
Pulse test
Gate threshold voltage Vth(V)
Drain-Source on resistance
RDS(ON) (mΩ)
3
50
20
300
250
2.5V,250mA
200
150
100
1
2
Gate-Source voltage VGS (V)
400
Common Source
Common
Source
Ta=25℃
Ta=25°C
180
350
Common Source
0.01
0
0
Drain-Source on resistance
RDS(ON) (mΩ)
Drain current
current ID (mA)
Drain
1400
1400
Drain-Source on resistance
RDS(ON) (mΩ)
ID - VGS
ID
ID -- VDS
VDS
1600
1600
VGS=4.5V,ID=500mA
0.8
1
2
3
4
5
6
7
8
Gate-Source voltage VGS (V)
9
10
Vth - Ta
Common Source
ID=0.1mA
VDS=3V
0.6
0.4
0.2
50
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
4
2010-02-15
SSM6L12TU
Q1(Nch MOS FET)
|Yfs| - ID
25°C
-25°C
1
IDR - VDS
1600
Drain reverse current IDR (mA)
Forward transfer admittance
|Yfs| (S)
10
Ta=100°C
Common Source
Common Source
VDS=3V
VDS=3V
Pulse
test
Ta=25°C
Common Source
Common
Source
VGS = 0 V
VGS=0V
Pulse test
Ta=25°C
1400
D
1200
D
1000
G
IDR
G
800
S
S
600
400
200
0
0
10
100
1000
10000
0
Drain current ID (mA)
C - VDS
1000
-0.2
-0.4
-0.6
-0.8
Drain-Source voltage VDS (V)
Switching time t (ns)
Ciss
100
-1
t - ID
1000
Common Source
VGS=0V
f=1MHz
Ta=25°C
Capacitance C (pF)
IDR
Common Source
Source
Common
VDD=10V
VGS=0~to
2.5V
2.5V
Ta=25℃
Ta=25°C
100
toff
tf
10
ton
Coss
Crss
tr
10
1
0.1
1
10
Drain-Source voltage VDS (V)
10
100
5
100
1000
Drain current ID (mA)
10000
2010-02-15
SSM6L12TU
Q2(Pch MOS FET)
ID
ID --VDS
VDS
ID - VGS
-10000
-1600
-1600
-5.0
-5.0
-3.0
-3.0
- 1000
-1200
-1200
Drain current ID (mA)
Drain
Drain current
current ID
ID (mA)
(mA)
-1400
-1400
-2.0
-2.0
-1000
-1000
-4.0
-4.0
-800
-800
-1.8
-1.8
-600
-600
-400
-400
VGS=-1.6
VGS=-1.6
-200
-200
Common
Source
Common
Source
Common
Source
Ta=25°C
Ta=25°C
00
-0.2
-0.2
-0.4
-0.4
-0.6
-0.6
-0.8
- 10
Ta=100°C
-1
25°
-25°C
- 0.1
Ta=25℃, Pulse test
00
-100
- 0.01
-1
0
Common Source
Common Source
VDS=-3V
VDS=-3V
Pulse test
-1
-2
Gate-Source voltage VGS (V)
Drain-Source
Drain-Sourcevoltage
voltage VDS
VDS(V)
(V)
-3
-
500
Common
CommonSource
Source
ID=-250mA
ID=-250mA
400
Drain-Source on resistance
RDS(ON) (mΩ)
Drain-Source on resistance
RDS(ON) (mΩ)
RDS(ON) - VGS
RDS(ON) - ID
500
-2.5V
300
200
VGS=-4V
Common Source
100
Ta=25℃
Common Source
Pulse
test
Ta=25°C
0
0
-200
-400
-600
-800
400
Pulse test
300
200
Ta=100°C
25°C
-25°C
100
0
0
-1000 -1200 -1400 -1600
-1
-2
Drain current ID (mA)
RDS(ON) - Ta
400
Common
CommonSource
Source
ID=-250mA
ID=-250mA
Pulse test
-2.5V
300
VGS=-4V
200
100
-0.8
-0.6
-0.4
-0.2
Common Source
ID=-0.1mA
VDS=-3V
0
-60 -40 -20
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
-10
Vth - Ta
-1
Gate threshold voltage Vth(V)
Drain-Source on resistance
RDS(ON) (mΩ)
500
-3 -4 -5 -6 -7 -8 -9
Gate-Source voltage VGS (V)
0
20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
6
2010-02-15
SSM6L12TU
Q2(Pch MOS FET)
|Yfs| - ID
IDR - VDS
1600
Drain reverse current IDR (mA)
Forward transfer admittance
|Yfs| (S)
10
25°C
-25°C
1
Ta=100°C
Common Source
0
-10
VDS=-3V
Common Source
VDS=-3V
Ta=25℃
Ta=25°C
Pulse
test
Common
Source
Common Source
VGS = 0 V
VGS=0V
Pulse test
Ta=25°C
D
1400
1200
IDR
G
1000
800
S
600
400
200
0
-100
-1000
-10000
0.0
0.2
Drain current ID (mA)
C - VDS
Ciss
100
Common Source
VGS=0V
f=1MHz
Ta=25°C
Coss
Crss
-1
-10
Drain-Source voltage VDS (V)
toff
CommonSource
Source
Common
VDD=-10V
VDD=-10V
VGS=0
to2.5V
-2.5V
VGS=0~Ta=25℃
Ta=25°C
100
tf
10
ton
tr
10
-0
1.0
t - ID
1000
Switching time t (ns)
Capacitance C (pF)
1000
0.4
0.6
0.8
Drain-Source voltage VDS (V)
1
-10
-100
7
-100
-1000
Drain current ID (mA)
-10000
2010-02-15
SSM6L12TU
PD* - Ta
1000
Drain power dissipation PD* (mW)
Mounted
FR4 board
mounted
FR4 board
t=10s
800
(25.4mm*25.4mm*1.6t
(25.4
mm × 25.4mm × 1.6 mm)
2
)
Cu Pad
:645mm
Cu Pad
:645mm
2
600
DC
400
200
0
0
20
*:Total Rating
40
60
80 100 120 140
Ambient temperature Ta( ℃)
160
Transient thermal impedance
rth (°C/W )
rth – tw
1000
Single pulse
Mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
100
10
1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
8
2010-02-15
SSM6L12TU
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
• The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
9
2010-02-15