PD - 94165 HEXFET® POWER MOSFET THRU-HOLE (TO-257AA) IRF5Y6215CM 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5Y6215CM -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. TO-257AA Features: n n n n n n n Low RDS(on) Avalanche Energy Ratings Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units -11 -7.0 -44 75 0.6 ±20 135 -6.6 7.5 12 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (0.063in./1.6mm from case for 10sec) 4.3 (Typical) C g For footnotes refer to the last page www.irf.com 1 04/10/01 IRF5Y6215CM Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units — — V 0.18 — V/°C — 0.29 Ω — — — — -4.0 — -25 -250 V S( ) Test Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1.0mA VGS = -10V, ID = -6.6A ➃ VDS = VGS, ID = -250µA VDS ≥ 15V, IDS = -6.6A ➃ VDS = -150V ,VGS=0V VDS = -120V, VGS = 0V, TJ =125°C VGS = -20V VGS = 20V VGS = -10V, ID = -6.6A VDS = -120V Ω Parameter BVDSS Drain-to-Source Breakdown Voltage -150 ∆BV DSS/∆T J Temperature Coefficient of Breakdown — Voltage RDS(on) Static Drain-to-Source On-State — Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 6.0 IDSS Zero Gate Voltage Drain Current — — µA IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.8 -100 100 66 13 40 25 65 75 53 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 1000 230 115 — — — nA nC VDD = -75V, ID = -6.6A, VGS = -10V, RG = 6.8Ω ns nH Measured from drain lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in. from package) pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — -11 -44 -1.6 240 1.7 Test Conditions A V ns µC Tj = 25°C, IS = -6.6A, VGS = 0V ➃ Tj = 25°C, IF = -6.6A, di/dt ≤ 100A/µs VDD ≤ −50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.67 Test Conditions °C/W Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com IRF5Y6215CM 100 100 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V 1 -4.5V 20µs PULSE WIDTH T = 25 C 1 -4.5V 1 20µs PULSE WIDTH T = 150 C 10 100 ° J 0.1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 TJ = 25 ° C TJ = 150 ° C 10 1 15 V DS = -50V 20µs PULSE WIDTH 0.1 4 6 8 10 12 14 -VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com R DS(on) , Drain-to-Source On Resistance (Normalized) 100 -I D , Drain-to-Source Current (A) 10 ° J 0.1 0.1 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) 10 VGS -15V -10V -8.0V -7.0V -6.0V -5.5V -5.0V BOTTOM -4.5V TOP TOP ID = -11A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF5Y6215CM VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C iss 1200 800 Coss Crss 400 ID = -6.6A VDS =-120V VDS =-75V VDS =-30V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 0 100 20 40 60 80 QG , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 100 TJ = 150 ° C -I D, Drain-to-Source Current (A) -ISD , Reverse Drain Current (A) C, Capacitance (pF) 1600 20 -VGS , Gate-to-Source Voltage (V) 2000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 10 TJ = 25 ° C 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 -VSD ,Source-to-Drain Voltage (V) 2.2 10 1ms 1 10ms Tc = 25°C Tj = 150°C Single Pulse 0.1 1 10 100 1000 -VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 8. Maximum Safe Operating Area www.irf.com IRF5Y6215CM 12 RD V DS VGS 10 D.U.T. -ID , Drain Current (A) RG + V DD 8 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 6 4 Fig 10a. Switching Time Test Circuit 2 td(on) tr t d(off) tf VGS 0 25 50 75 100 125 10% 150 TC , Case Temperature ( ° C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF5Y6215CM L D .U .T RG IA S VGS -20V tp 250 VD D A D R IV E R 0.01 Ω 15V Fig 12a. Unclamped Inductive Test Circuit IAS EAS , Single Pulse Avalanche Energy (mJ) VDS ID -3.0A -4.2A BOTTOM -6.6A TOP 200 150 100 50 0 25 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG -12V 12V .2µF .3µF -10V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF5Y6215CM Footnotes: Repetitive Rating; Pulse width limited by ISD ≤ -6.6A, di/dt ≤ 380 A/µs, maximum junction temperature. VDD = -50 V, Starting TJ = 25°C, L= 6.2mH Peak IAS = -6.6A, VGS =-10 V, RG= 25Ω Pulse width ≤ 300 µs; Duty Cycle ≤ 2% VDD ≤ -150V, TJ ≤ 150°C Case Outline and Dimensions — TO-257AA IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 04/01 www.irf.com 7