PD-91289E POWER MOSFET THRU-HOLE (TO-257AA) IRFY240C,IRFY240CM 200V, N-CHANNEL ® HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY240C 0.18 Ω 16A Ceramic IRFY240CM 0.18 Ω 16A Ceramic TO-257AA HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. Features: n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Ideally Suited For Space Level Applications Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight Units 16 10.2 64 100 0.8 ±20 580 16 10 5.0 -55 to 150 A W W/°C V mJ A mJ V/ns °C 300(0.063in./1.6mm from case for 10 sec) 4.3 (Typical) g For footnotes refer to the last page www.irf.com 1 02/06/08 IRFY240C, IRFY240CM Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) BVDSS Parameter Min Drain-to-Source Breakdown Voltage 200 — — V — 0.29 — V/°C — — 0.18 Ω VGS = 10V, ID = 10.2A à 2.0 6.1 — — — — — — 4.0 — 25 250 V S — — — — — — — — — — — — — — — — — — — 6.8 100 -100 60 10.6 37.6 20 152 58 67 — VDS = VGS, ID = 250µA VDS > 15V, IDS = 10.2A à VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =10V, ID = 16A VDS = 100V ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance Typ Max Units µA nA nC Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VDD = 100V, ID = 16A, VGS =10V, RG = 9.1Ω ns Measured from drain lead (6mm/0.25in. nH from package) to source lead (6mm/0.25in. from package) — — — 1300 400 130 — — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD trr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 16 64 1.5 500 5.3 Test Conditions A V ns µC Tj = 25°C, IS = 16A, VGS = 0V à Tj = 25°C, IF = 16A, di/dt ≤ 100A/µs VDD ≤ 50V à Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthCS RthJA Junction-to-Case Case-to-sink Junction-to-Ambient Min Typ Max — — — — 1.25 0.21 — — 80 Units Test Conditions °C/W Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com IRFY240C, IRFY240CM Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics ID =16A Fig 3. Typical Transfer Characteristics www.irf.com Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFY240C, IRFY240CM ID = 16A 13 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 8. Maximum Safe Operating Area www.irf.com IRFY240C, IRFY240CM V DS VGS RG RD D.U.T. + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit VDS 90% Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFY240C, IRFY240CM 15V D.U.T. RG VGS 20V DRIVER L VDS + V - DD IAS A 0.01Ω tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V 0 .2µF .3µF 10 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFY240C, IRFY240CM Footnotes: À Repetitive Rating; Pulse width limited by  ISD ≤ 16A, di/dt ≤ 150A/µs, VDD ≤ 200V, TJ ≤ 150°C maximum junction temperature. Á VDD = 50V, starting TJ = 25°C, L= 4.5mH Peak IL = 16A, VGS = 10V à Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Case Outline and Dimensions — TO-257AA 0.13 [.005] A 10.66 [.420] 10.42 [.410] 3X Ø 3.81 [.150] 3.56 [.140] 16.89 [.665] 16.39 [.645] 13.63 [.537] 13.39 [.527] 1 2 5.08 [.200] 4.83 [.190] 1.14 [.045] 0.89 [.035] B 10.92 [.430] 10.42 [.410] 3 0.71 [.028] MAX. C 15.88 [.625] 12.70 [.500] 2.54 [.100] 2X 3X Ø 0.88 [.035] 0.64 [.025] Ø 0.50 [.020] C A STANDARD PIN-OUT OPTIONAL PIN-OUT 3.05 [.120] B NOT ES : 1. 2. 3. 4. CERAMIC EYELETS PIN ASSIGNMENTS 1 = DRAIN DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994. CONT ROLLING DIMENS ION: INCH. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA. 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/2008 www.irf.com 7