IRF IRFY240C

PD-91289E
POWER MOSFET
THRU-HOLE (TO-257AA)
IRFY240C,IRFY240CM
200V, N-CHANNEL
®
HEXFET MOSFET TECHNOLOGY
Product Summary
Part Number
RDS(on)
ID
Eyelets
IRFY240C
0.18 Ω
16A
Ceramic
IRFY240CM
0.18 Ω
16A
Ceramic
TO-257AA
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as
switching power supplies, motor controls, inverters,
choppers, audio amplifiers, high energy pulse circuits, and
virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package eliminates
the need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Ideally Suited For Space Level
Applications
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
16
10.2
64
100
0.8
±20
580
16
10
5.0
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300(0.063in./1.6mm from case for 10 sec)
4.3 (Typical)
g
For footnotes refer to the last page
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1
02/06/08
IRFY240C, IRFY240CM
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
200
—
—
V
—
0.29
—
V/°C
—
—
0.18
Ω
VGS = 10V, ID = 10.2A Ã
2.0
6.1
—
—
—
—
—
—
4.0
—
25
250
V
S
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
60
10.6
37.6
20
152
58
67
—
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 10.2A Ã
VDS= 160V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 16A
VDS = 100V
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ Max Units
µA
nA
nC
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VDD = 100V, ID = 16A,
VGS =10V, RG = 9.1Ω
ns
Measured from drain lead (6mm/0.25in.
nH
from package) to source lead
(6mm/0.25in. from package)
—
—
—
1300
400
130
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
16
64
1.5
500
5.3
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 16A, VGS = 0V Ã
Tj = 25°C, IF = 16A, di/dt ≤ 100A/µs
VDD ≤ 50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-sink
Junction-to-Ambient
Min Typ Max
—
—
—
— 1.25
0.21 —
—
80
Units
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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IRFY240C, IRFY240CM
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
ID =16A
Fig 3. Typical Transfer Characteristics
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Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFY240C, IRFY240CM
ID = 16A
13
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
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IRFY240C, IRFY240CM
V DS
VGS
RG
RD
D.U.T.
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
VDS
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFY240C, IRFY240CM
15V
D.U.T.
RG
VGS
20V
DRIVER
L
VDS
+
V
- DD
IAS
A
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
0
.2µF
.3µF
10 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFY240C, IRFY240CM
Footnotes:
À Repetitive Rating; Pulse width limited by
 ISD ≤ 16A, di/dt ≤ 150A/µs,
VDD ≤ 200V, TJ ≤ 150°C
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 4.5mH
Peak IL = 16A, VGS = 10V
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Case Outline and Dimensions — TO-257AA
0.13 [.005]
A
10.66 [.420]
10.42 [.410]
3X Ø
3.81 [.150]
3.56 [.140]
16.89 [.665]
16.39 [.645]
13.63 [.537]
13.39 [.527]
1
2
5.08 [.200]
4.83 [.190]
1.14 [.045]
0.89 [.035]
B
10.92 [.430]
10.42 [.410]
3
0.71 [.028]
MAX.
C
15.88 [.625]
12.70 [.500]
2.54 [.100]
2X
3X Ø
0.88 [.035]
0.64 [.025]
Ø 0.50 [.020]
C A
STANDARD
PIN-OUT
OPTIONAL
PIN-OUT
3.05 [.120]
B
NOT ES :
1.
2.
3.
4.
CERAMIC EYELETS
PIN ASSIGNMENTS
1 = DRAIN
DIMENS IONING & T OLERANCING PER ANS I Y14.5M-1994.
CONT ROLLING DIMENS ION: INCH.
DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
OUT LINE CONFORMS T O JEDEC OUT LINE T O-257AA.
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/2008
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7