STB60NF06 N-CHANNEL 60V - 0.014Ω - 60A D2PAK STripFET POWER MOSFET TYPE STB60NF06 ■ ■ ■ ■ ■ VDSS RDS(on) ID 60V < 0.016 Ω 60A TYPICAL RDS(on) = 0.014Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL DESCRIPTION This Power Mosfet series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. 3 1 D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ HIGH-EFFICIENCY DC-DC CONVERTERS ■ UPS AND MOTOR CONTROL ■ AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR Parameter Value Unit Drain-source Voltage (VGS = 0) 60 V Drain-gate Voltage (RGS = 20 kΩ) 60 V ± 20 V ID Drain Current (continuos) at TC = 25°C 60 A ID Drain Current (continuos) at TC = 100°C 42 A Drain Current (pulsed) 240 A VGS IDM (●) PTOT dv/dt (1) Tstg Tj Gate- source Voltage Total Dissipation at TC = 25°C 110 W Derating Factor 0.73 W/°C 4 V/ns –65 to 175 °C 175 °C Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature ( ●) Pulse width limi ted by safe operating area February 2001 (1) ISD≤ 60A, di/dt≤400 A/µs, VDD≤ 24V, Tj≤TjMAX 1/9 STB60NF06 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.36 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 30 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 30 V) 360 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V V(BR)DSS Min. Typ. Max. 60 Unit V 1 VDS = Max Rating, TC = 125 °C µA 10 µA ±100 nA Max. Unit 4 V 0.014 0.016 Ω Typ. Max. Unit ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA R DS(on) Static Drain-source On Resistance VGS = 10V, ID = 30 A Min. Typ. 2 DYNAMIC Symbol gfs (1) 2/9 Parameter Test Conditions Forward Transconductance VDS =15V , ID = 30 A C iss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 Coss Crss Min. 20 S 1810 pF Output Capacitance 360 pF Reverse Transfer Capacitance 125 pF STB60NF06 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) Parameter Test Conditions Min. Typ. Max. Unit 16 ns Rise Time VDD = 30 V, I D = 30 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 108 ns Qg Total Gate Charge VDD = 48V, ID =60A,V GS = 10V 49 Qgs Gate-Source Charge 18 nC Q gd Gate-Drain Charge 14 nC tr Turn-on Delay Time 66 nC SWITCHING OFF Symbol Parameter Test Condit ions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD = 30 V, ID = 30 A, R G = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 43 20 ns ns td(off) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp =48V, I D = 60 A R G = 4.7Ω, VGS = 10V (see test circuit, Figure 3) 40 12 21 ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Test Conditions Min. Typ. Source-drain Current Source-drain Current (pulsed) Forward On Voltage ISD = 60 A, V GS = 0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 60 A, di/dt = 100A/µs, VDD = 25V, Tj = 150°C (see test circuit, Figure 5) Max. Unit 60 A 240 A 1.3 73 182 5 V ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence 3/9 STB60NF06 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STB60NF06 Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STB60NF06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STB60NF06 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 7/9 1 STB60NF06 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B C TAPE MECHANICAL DATA mm MIN. MAX. inch MIN. MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D D1 1.5 1.59 1.6 1.61 0.059 0.063 0.062 0.063 E F 1.65 11.4 1.85 11.6 0.065 0.073 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 P2 11.9 1.9 12.1 2.1 0.468 0.476 0.075 0.082 R T 50 0.25 1.574 0.35 0.0098 0.0137 W 23.7 24.3 DIM. * on sales type 8/9 0.933 0.956 1.5 12.8 D 20.2 G 24.4 N T 100 MAX. 330 inch MIN. MAX. 12.992 13.2 0.059 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB60NF06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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