STD7NB20 STD7NB20-1 N-CHANNEL 200V - 0.3Ω - 7A DPAK/IPAK PowerMESH™ MOSFET TYPE STD7NB20 STD7NB20-1 ■ ■ ■ ■ ■ ■ VDSS RDS(on) ID 200 V 200 V < 0.40 Ω < 0.40 Ω 7A 7A TYPICAL RDS(on) = 0.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 3 3 2 1 1 IPAK TO-251 DPAK TO-252 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SWITH MODE POWER SUPPLIES (SMPS) ■ DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Parameter Drain-source Voltage (VGS = 0) Value Unit 200 V Drain-gate Voltage (RGS = 20 kΩ) 200 V Gate- source Voltage ± 30 V ID Drain Current (continuos) at TC = 25°C 7 A ID Drain Current (continuos) at TC = 100°C 5 A Drain Current (pulsed) 28 A IDM (l) PTOT dv/dt (1) Tstg Tj Total Dissipation at TC = 25°C 55 W Derating Factor 0.44 W/°C Peak Diode Recovery voltage slope 5.5 V/ns – 65 to 150 °C 150 °C Storage Temperature Max. Operating Junction Temperature (•)Pulse width limited by safe operating area July 2002 (1) ISD≤ 7A, di/dt≤200 A/µs, VDD≤ V (BR)DSS, Tj≤TjMAX 1/10 STD7NB20 / STD7NB20-1 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.27 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Maximum Lead Temperature For Soldering Purpose 275 °C Tl AVALANCHE CHARACTERISTICS Symbol Parameter IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value Unit 7 A 100 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 30V V(BR)DSS Min. Typ. Max. 200 Unit V VDS = Max Rating, TC = 125 °C 1 µA 10 µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 3.5 A Min. Typ. Max. Unit 3 4 5 V 0.30 0.40 Ω Min. Typ. Max. Unit 2 3 DYNAMIC Symbol gfs (1) 2/10 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 3.5 A VDS = 25V, f = 1 MHz, VGS = 0 S Ciss Input Capacitance 470 650 pF Coss Output Capacitance 135 190 pF Crss Reverse Transfer Capacitance 22 30 pF STD7NB20 / STD7NB20-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 100 V, ID = 5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 160V, ID = 10 A, VGS = 10V Typ. Max. Unit 10 14 ns 15 20 ns 17 24 nC 7.5 nC 5.5 nC SWITCHING OFF Symbol tr(Voff) tf tc Parameter Off-Voltage Rise Time Fall Time Cross-over Time Test Conditions Min. VDD = 160V, ID = 10 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 3) Typ. Max. Unit 8 10 20 11 14 28 ns ns ns Typ. Max. Unit SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Source-drain Current 7 A ISDM (2) Source-drain Current (pulsed) 28 A VSD (1) Forward On Voltage ISD = 7 A, VGS = 0 1.5 V trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 10 A, di/dt = 100A/µs VDD = 50V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current 170 ns 980 nC 11.5 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/10 STD7NB20 / STD7NB20-1 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/10 STD7NB20 / STD7NB20-1 Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/10 STD7NB20 / STD7NB20-1 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/10 STD7NB20 / STD7NB20-1 D2PAK MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 0.315 10 E1 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0.015 0º 8º 3 V2 0.4 7/10 1 STD7NB20 / STD7NB20-1 TO-251 (IPAK) MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051 B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 B5 0.033 0.3 0.012 B6 0.95 0.037 C 0.45 0.6 0.017 C2 0.48 0.6 0.019 0.023 0.023 D 6 6.2 0.236 0.244 E 6.4 6.6 0.252 0.260 G 4.4 4.6 0.173 0.181 H 15.9 16.3 0.626 0.641 L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 L2 0.8 0.047 1 0.031 0.039 A1 C2 A3 A C H B B6 = 1 = 2 G = = = E B2 = 3 B5 L D B3 L2 L1 0068771-E 8/10 STD7NB20 / STD7NB20-1 DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 12.1 0.476 B1 1.6 MIN. MAX. D 1.5 D1 1.5 0.059 0.063 E 1.65 1.85 0.065 0.073 F 7.4 7.6 0.291 0.299 0.059 K0 2.55 2.75 0.100 0.108 P0 3.9 4.1 0.153 0.161 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 16.3 1.574 0.618 R 40 W 15.7 * on sales type 9/10 0.641 MIN. 330 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 0.795 18.4 0.645 0.724 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD7NB20 / STD7NB20-1 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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