STB80NF55-06 N-CHANNEL 55V - 0.005Ω - 80A D2PAK STripFET POWER MOSFET TYPE STB80NF55-06 ■ ■ ■ ■ ■ VDSS RDS(on) ID 55 V <0.0065Ω 80 A TYPICAL RDS(on) = 0.005Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 3 1 D2PAK (TO-263) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ SOLENOID AND RELAY DRIVERS ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ DC-DC CONVERTERS ■ AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Value Unit Drain-source Voltage (VGS = 0) 55 V Drain-gate Voltage (RGS = 20 kΩ) 55 V VGS Gate- source Voltage ±20 V ID(1) Drain Current (continuos) at TC = 25°C 80 A ID VDS VDGR Parameter Drain Current (continuos) at TC = 100°C 80 A IDM (●) Drain Current (pulsed) 320 A PTOT Total Dissipation at TC = 25°C 300 W Derating Factor 2 W/°C Peak Diode Recovery voltage slope 7 V/ns –65 to 175 °C 175 °C dv/dt(2) Tstg Tj Storage Temperature Max. Operating Junction Temperature ( ●) Pulse width limi ted by safe operating area October 2001 (1) Current Limited by Package (2) ISD≤ 80A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj≤TjMAX 1/9 STB80NF55-06 THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 0.5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl AVALANCHE CHARACTERISTICS Symbol Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Parameter 80 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 650 mJ ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 IDSS Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ±20V ±100 nA Max. Unit V(BR)DSS 55 V ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA R DS(on) Static Drain-source On Resistance VGS = 10 V, I D = 40 A Min. 2 Typ. 3 4 V 0.005 0.0065 Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/9 Parameter Test Conditions Forward Transconductance VDS > ID(on) x RDS(on)max, ID =40 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 50 S C iss Input Capacitance 7300 pF Coss Output Capacitance 980 pF Crss Reverse Transfer Capacitance 250 pF STB80NF55-06 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Test Conditions Min. VDD = 27V, ID = 40A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) VDD = 44V, ID = 80A, VGS = 10V Typ. Max. Unit 40 ns 240 ns Qg Total Gate Charge Qgs Gate-Source Charge 38 nC Q gd Gate-Drain Charge 66 nC 190 256 nC SWITCHING OFF Symbol td(off) tf Parameter Turn-off-Delay Time Test Condit ions Min. VDD = 27V, ID = 40A, R G = 4.7Ω, VGS = 4.5V (see test circuit, Figure 3) Fall Time Typ. Max. Unit 260 ns 75 ns td(off) Off-voltage Rise Time Vclamp =44V, I D =80A R G = 4.7Ω, VGS = 10V 70 ns Tr(Voff) Off Voltage Rise time (see test circuit, Figure 5) 185 ns tf Fall Time 240 ns tc Cross-over Time 110 ns SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Typ. Source-drain Current ISDM (1) Source-drain Current (pulsed) VSD (2) Forward On Voltage ISD = 80A, VGS = 0 trr Reverse Recovery Time ISD = 80A, di/dt = 100A/µs, VDD = 20V, Tj = 150°C (see test circuit, Figure 5) Qrr IRRM Max. Unit 80 A 320 A 1.5 V 80 ns Reverse Recovery Charge 0.24 µC Reverse Recovery Current 6 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence 3/9 STB80NF55-06 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STB80NF55-06 Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature Normalized Drain-Source Breakdown vs Temperature 5/9 STB80NF55-06 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STB80NF55-06 2PAK D FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. DIM. mm inch A0 MIN. 10.5 MAX. MIN. MAX. 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 E 1.59 1.65 1.61 1.85 0.062 0.063 0.065 0.073 F K0 11.4 4.8 11.6 5.0 0.449 0.456 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 R 1.9 50 2.1 0.075 0.082 1.574 T W 0.25 23.7 0.35 0.0098 0.0137 24.3 0.933 0.956 MIN. 330 MAX. A B 1.5 C D 12.8 20.2 13.2 0.504 0.520 0795 G 24.4 26.4 0.960 1.039 N 100 T TAPE MECHANICAL DATA MAX. inch BASE QTY 1000 12.992 0.059 3.937 30.4 1.197 BULK QTY 1000 * on sales type 7/9 STB80NF55-06 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A TAPE MECHANICAL DATA DIM. 8/9 mm inch MIN. MAX. MIN. A0 B0 10.5 15.7 10.7 15.9 0.413 0.421 0.618 0.626 MAX. D D1 1.5 1.59 1.6 1.61 0.059 0.063 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 P0 4.8 3.9 5.0 4.1 0.189 0.197 0.153 0.161 P1 P2 15.9 1.9 16.1 2.1 0.626 0.633 0.075 0.082 R 50 W 23.7 1.574 24.3 0.933 0.956 B C 1.5 12.8 D 20.2 G 24.4 N T 100 MAX. 330 13.2 inch MIN. MAX. 12.992 0.059 0.504 0.520 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB80NF55-06 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 9/9