STMICROELECTRONICS STD30NF06L

STD30NF06L
N-CHANNEL 60V - 0.022Ω - 35A DPAK/IPAK
STripFET™ POWER MOSFET
TYPE
STD30NF06L
■
■
■
■
■
■
VDSS
RDS(on)
ID
60 V
<0.028Ω
35 A
TYPICAL RDS(on) = 0.022Ω
EXCEPTIONAL dv/dt CAPABILITY
LOGIC LEVEL GATE DRIVE
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
ADD SUFFIX “-1” FOR ORDERING IN IPAK
CHARACTERIZATION ORIENTED FOR
AUTOMOTIVE APPLICATIONS
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting transistor shows extremely high packing density for
low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
3
3
2
1
1
IPAK
DPAK
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
Value
Unit
Drain-source Voltage (VGS = 0)
Parameter
60
V
Drain-gate Voltage (RGS = 20 kΩ)
60
V
± 20
V
35
A
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
25
A
Drain Current (pulsed)
140
A
Total Dissipation at TC = 25°C
70
W
0.46
W/°C
25
V/ns
– 55 to 175
°C
IDM (l)
PTOT
Derating Factor
dv/dt (1)
Tstg
Tj
Peak Diode Recovery voltage slope
Storage Temperature
Operating Junction Temperature
(●) Pulse width limited by safe operating area
July 2002
(1) ISD ≤38A, di/dt ≤400A/µs, V DD ≤ V(BR)DSS , Tj ≤ TJMAX.
1/10
STD30NF06L
THERMAL DATA
Rthj-case
Thermal Resistance Junction-case Max
2.14
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
°C/W
Maximum Lead Temperature For Soldering Purpose
275
°C
Tl
AVALANCHE CHARACTERISTICS
Symbol
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Parameter
35
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
150
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Min.
Typ.
Max.
60
Unit
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
V
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1
µA
VDS = Max Rating, TC = 125 °C
10
µA
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
±100
nA
Max.
Unit
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1.7
2.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 5 V, ID = 18 A
0.025
0.03
Ω
VGS = 10 V, ID = 18 A
0.022
0.028
Ω
Typ.
Max.
Unit
1
DYNAMIC
Symbol
gfs (1)
2/10
Parameter
Test Conditions
Forward Transconductance
VDS > =15 V , ID =15 A
Ciss
Input Capacitance
VDS = 25 V, f = 1 MHz, VGS = 0
Coss
Output Capacitance
Crss
Reverse Transfer
Capacitance
Min.
25
S
1600
pF
215
pF
60
pF
STD30NF06L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
td(on)
tr
Qg
Qgs
Qgd
Parameter
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
Min.
VDD = 30 V, ID = 18 A
RG = 4.7Ω VGS = 4.5 V
(see test circuit, Figure 3)
VDD = 48 V, ID = 38 A,
VGS = 5 V
Typ.
Max.
Unit
30
ns
105
ns
23
7
10
31
nC
nC
nC
Typ.
Max.
Unit
SWITCHING OFF
Symbol
td(off)
tf
Parameter
Turn-off-Delay Time
Fall Time
Test Conditions
Min.
VDD = 30 V, ID = 18 A,
RG = 4.7Ω, VGS = 4.5 V
(see test circuit, Figure 3)
65
25
ns
ns
SOURCE DRAIN DIODE
Symbol
ISD
ISDM (2)
VSD (1)
trr
Qrr
IRRM
Max.
Unit
Source-drain Current
Parameter
35
A
Source-drain Current (pulsed)
140
A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Test Conditions
Min.
Typ.
ISD = 35 A, VGS = 0
ISD = 38 A, di/dt = 100 A/µs,
VDD = 15 V, Tj = 150°C
(see test circuit, Figure 5)
1.5
70
140
4
V
ns
nC
A
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Normalized Thermal Impedence
3/10
STD30NF06L
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/10
STD30NF06L
Normalized Gate Threshold Voltage vs
Temperature
Normalized Drain-Source Breakdown vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/10
STD30NF06L
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/10
STD30NF06L
TO-251 (IPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
2.4
0.086
MAX.
0.094
0.043
A
2.2
A1
0.9
1.1
0.035
A3
0.7
1.3
0.027
0.051
B
0.64
0.9
0.025
0.031
B2
5.2
5.4
0.204
0.212
B3
0.85
B5
0.033
0.3
0.012
B6
0.95
0.037
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
15.9
16.3
0.626
0.641
L
9
9.4
0.354
0.370
L1
0.8
1.2
0.031
L2
0.8
0.047
1
0.031
0.039
A1
C2
A3
A
C
H
B
B3
=
1
=
2
G
=
=
=
E
B2
=
3
B5
L
D
B6
L2
L1
0068771-E
7/10
STD30NF06L
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0o
8o
0o
0o
P032P_B
8/10
STD30NF06L
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
DIM.
mm
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
1.5
D1
1.5
E
1.65
9/10
inch
MIN.
MAX.
12.1
0.476
1.6
0.059 0.063
0.059
1.85
0.065 0.073
F
7.4
7.6
0.291 0.299
K0
2.55
2.75
0.100 0.108
P0
3.9
4.1
0.153 0.161
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
R
W
40
15.7
16.3
1.574
0.618
0.641
MIN.
330
B
1.5
C
12.8
D
20.2
G
16.4
N
50
T
TAPE MECHANICAL DATA
MAX.
inch
MAX.
12.992
0.059
13.2
0.504 0.520
0.795
18.4
0.645 0.724
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
STD30NF06L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
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