ETC UN2121/2122/2123/2124/212X/212Y

Transistors with built-in Resistor
UNR2121/2122/2123/2124/212X/212Y
(UN2121/2122/2123/2124/212X/212Y)
Silicon PNP epitaxial planer transistor
Unit: mm
+0.2
2.8 –0.3
●
●
●
●
●
(R2)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
5kΩ
4.6kΩ
1.45
0.95
0.95
3
+0.1
+0.2
1.9±0.2
+0.1
0.16 –0.06
1.1 –0.1
Marking Symbol (R1)
UNR2121
7A
2.2kΩ
UNR2122
7B
4.7kΩ
UNR2123
7C
10kΩ
UNR2124
7D
2.2kΩ
UNR212X
7I
0.27kΩ
UNR212Y
7Y
3.1kΩ
1
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
0 to 0.1
●
0.65±0.15
2
+0.2
■ Resistance by Part Number
1.5 –0.05
0.8
●
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
2.9 –0.05
■ Features
●
+0.25
0.65±0.15
0.4 –0.05
For digital circuits
EIAJ:SC-59
Mini Type Package
Internal Connection
■ Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–50
V
Collector to emitter voltage
VCEO
–50
V
Collector current
IC
–500
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
R1
C
B
R2
E
Note) The part numbers in the parenthesis show conventional part number.
1
Transistors with built-in Resistor
■ Electrical Characteristics
UNR2121/2122/2123/2124/212X/212Y
(Ta=25˚C)
Parameter
Symbol
Collector cutoff current
Conditions
min
ICBO
VCB = –50V, IE = 0
–1
VCB = –50V, IE = 0
– 0.1
ICEO
VCE = –50V, IB = 0
–1
UNR212X ICEO
VCE = –50V, IB = 0
– 0.5
IEBO
VEB = –6V, IC = 0
–2
VCBO
IC = –10µA, IE = 0
UNR2121
Emitter
cutoff
current
UNR2123/2124
UNR2121
hFE
UNR2123/2124
VCE = –10V, IC = –100mA
UNR212X
–50
50
60
IC = –100mA, IB = –5mA
– 0.25
IC = –10mA, IB = – 0.3mA
– 0.25
UNR212Y VCE(sat)
IC = –50mA, IB = –5mA
VCE(sat)
VOH
VCC = –5V, VB = – 0.5V, RL = 500Ω
Output voltage low level
VOL
VCC = –5V, VB = –3.5V, RL = 500Ω
Transition frequency
fT
VCB = –10V, IE = 50mA, f = 200MHz
– 0.2
200
2.2
4.7
R1
(–30%)
UNR212X
UNR212X
R1/R2
UNR212Y
Common characteristics chart
PT — Ta
250
200
150
100
50
0
80 100 120 140 160
Ambient temperature Ta (˚C)
(+30%)
3.1
0.8
UNR2124
10
1.0
0.22
0.054
0.67
V
MHz
0.27
UNR212Y
Total power dissipation PT (mW)
V
UNR2122
UNR2123
V
– 0.15
–4.9
UNR2121
Resistance ratio
2
V
UNR212X VCE(sat)
Output voltage high level
60
mA
20
Collector to emitter saturation voltage
40
µA
40
UNR2122/212Y
20
µA
–1
Collector to base voltage
Input
resistance
Unit
–5
UNR2122/212X/212Y
Forward
current
transfer
ratio
max
UNR212X ICBO
Collector cutoff current
0
typ
1.2
kΩ
Transistors with built-in Resistor
UNR2121/2122/2123/2124/212X/212Y
Characteristics charts of UNR2121
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
–200
IB=–1.0mA
–160
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–120
–0.4mA
–80
–0.3mA
–0.2mA
–40
–0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
–100
0
0
–2
–4
–6
–8
–10
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
Collector to emitter voltage VCE (V)
–25˚C
–3
–10
Ta=75˚C
200
100
25˚C
0
–1
–100 –300 –1000
–3
6
4
–30
–100 –300 –1000
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
8
–10
Collector current IC (mA)
IO — VIN
Output current IO (µA)
Collector output capacitance Cob (pF)
–30
–10000
f=1MHz
IE=0
Ta=25˚C
10
300
Collector current IC (mA)
Cob — VCB
12
VCE= –10V
–25˚C
–0.01
–1
–12
hFE — IC
400
Forward current transfer ratio hFE
–240
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
2
–0.03
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
–1
–3
–10
–30
–100
Output current IO (mA)
Input voltage VIN (V)
Characteristics charts of UNR2122
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
–250
IB=–1.0mA
–200
–0.9mA
–0.8mA
–0.7mA
–150
–0.6mA
–0.5mA
–100
–0.4mA
–0.3mA
–0.2mA
–50
–0.1mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
hFE — IC
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–25˚C
–0.03
–0.01
–1
160
IC/IB=10
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
Ta=75˚C
VCE= –10V
Forward current transfer ratio hFE
–300
120
25˚C
80
–25˚C
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
3
Transistors with built-in Resistor
UNR2121/2122/2123/2124/212X/212Y
Cob — VCB
IO — VIN
–10000
20
16
12
8
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
Output current IO (µA)
Collector output capacitance Cob (pF)
24
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
4
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
VCB (V)
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR2123
IC — VCE
VCE(sat) — IC
Collector current IC (mA)
–200
IB=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–160
–120
–0.6mA
–0.5mA
–80
–0.4mA
–0.3mA
–40
–0.2mA
–0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
–100
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE
IC/IB=10
–30
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
(V)
–3
–30
–25˚C
100
50
0
–1
–100 –300 –1000
–3
16
12
8
–10
–30
–100 –300 –1000
Collector current IC (mA)
VIN — IO
–100
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Input voltage VIN (V)
Output current IO (µA)
Collector output capacitance Cob (pF)
150
IO — VIN
f=1MHz
IE=0
Ta=25˚C
–300
–100
–30
–10
VO=–0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
4
–3
0
–0.1 –0.3
–1
–3
–10
–30
–100
Collector to base voltage VCB (V)
4
–10
–10000
20
25˚C
Collector current IC (mA)
Cob — VCB
24
Ta=75˚C
VCE= –10V
–25˚C
–0.01
–1
–12
hFE — IC
200
Forward current transfer ratio hFE
–240
–1
–0.4
–0.03
–0.6
–0.8
–1.0
–1.2
Input voltage VIN (V)
–1.4
–0.01
–0.1 –0.3
–1
–3
–10
–30
Output current IO (mA)
–100
Transistors with built-in Resistor
UNR2121/2122/2123/2124/212X/212Y
Characteristics charts of UNR2124
IC — VCE
VCE(sat) — IC
Collector current IC (mA)
–250
IB=–1.0mA
–200
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–150
–0.5mA
–0.4mA
–100
–0.3mA
–0.2mA
–50
–0.1mA
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
0
0
–2
–4
–6
–8
–10
–10
–3
–1
Ta=75˚C
–0.3
25˚C
–0.1
–0.03
–0.01
–1
–12
400
IC/IB=10
–30
Collector to emitter voltage VCE (V)
–25˚C
–3
–10
–30
VCE= –10V
350
300
250
Ta=75˚C
200
25˚C
150
–25˚C
100
50
0
–1
–100 –300 –1000
–3
IO — VIN
–10000
16
12
8
–100 –300 –1000
VIN — IO
VO=–5V
Ta=25˚C
–3000
–30
–1000
–10
Output current IO (µA)
20
–30
–100
Input voltage VIN (V)
f=1MHz
IE=0
Ta=25˚C
–10
Collector current IC (mA)
Collector current IC (mA)
Cob — VCB
24
Collector output capacitance Cob (pF)
hFE — IC
–100
Forward current transfer ratio hFE
–300
–300
–100
–30
–10
VO= –0.2V
Ta=25˚C
–3
–1
–0.3
–0.1
4
–3
0
–0.1 –0.3
–1
–3
–10
Collector to base voltage
–30
–1
–0.4
–100
–0.03
–0.6
–0.8
–1.0
–1.2
–0.01
–0.1 –0.3
–1.4
Input voltage VIN (V)
VCB (V)
–1
–3
–10
–30
–100
Output current IO (mA)
Characteristics charts of UNR212X
IC — VCE
VCE(sat) — IC
Ta=25˚C
Collector current IC (mA)
–200
IB=–1.6mA
–160
–1.4mA
–1.2mA
–120
–1.0mA
–0.8mA
–80
–0.6mA
–0.4mA
–40
–0.2mA
0
0
–2
–4
–6
–8
–10
Collector to emitter voltage VCE (V)
–12
Collector to emitter saturation voltage VCE(sat) (V)
–100
hFE — IC
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–25˚C
–0.03
–0.01
–1
240
IC/IB=10
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
VCE= –10V
Forward current transfer ratio hFE
–240
200
160
Ta=75˚C
120
25˚C
80
–25˚C
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
5
Transistors with built-in Resistor
UNR2121/2122/2123/2124/212X/212Y
Cob — VCB
VIN — IO
–100
f=1MHz
IE=0
Ta=25˚C
20
16
12
8
VO=–0.2V
Ta=25˚C
–30
Input voltage VIN (V)
Collector output capacitance Cob (pF)
24
–10
–3
–1
–0.3
–0.1
4
–0.03
0
–1
–3
–10
–30
–0.01
–0.1 –0.3
–100
–1
–3
–10
–30
–100
Output current IO (mA)
Collector to base voltage VCB (V)
Characteristics charts of UNR212Y
IC — VCE
VCE(sat) — IC
IB=–1.2mA
–160
–1.0mA
–0.8mA
–120
–0.6mA
–80
–0.4mA
–40
–0.2mA
0
–2
–4
–6
–8
–10
–12
IC/IB=10
–30
–10
–3
–1
–0.3
Ta=75˚C
25˚C
–0.1
–25˚C
–0.03
–0.01
–1
0
–3
Cob — VCB
–30
f=1MHz
IE=0
Ta=25˚C
16
12
8
VO=–0.2V
Ta=25˚C
–10
–3
–1
–0.3
–0.1
4
–0.03
0
–1
–3
–10
Collector to base voltage
–30
–100
VCB (V)
–0.01
–0.1 –0.3
–1
–3
VCE= –10V
–10
–30
Output current IO (mA)
200
160
Ta=75˚C
25˚C
120
–25˚C
80
40
0
–1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
–30
Input voltage VIN (V)
20
–100 –300 –1000
VIN — IO
–100
24
Collector output capacitance Cob (pF)
–10
Collector current IC (mA)
Collector to emitter voltage VCE (V)
240
Forward current transfer ratio hFE
Collector current IC (mA)
–200
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C
6
hFE — IC
–100
–240
–100
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the
"Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial
property, the granting of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without
notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to
make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended,
so that such equipment may not violate relevant laws or regulations because of the function of our
products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life
and after-unpacking standby time) agreed upon when specification sheets are individually exchanged.
(7) No part of this material may be reprinted or reproduced by any means without written permission
from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available
product types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information
before starting precise technical research and/or purchasing activities.
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but
there is always the possibility that further rectifications will be required in the future. Therefore,
Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material.
C. These materials are solely intended for a customer's individual use.
Therefore, without the prior written approval of Panasonic, any other use such as reproducing,
selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR