IXYS IXGH30N60B2D1

Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 KHz hard
switching and up to 150 KHz
resonant switching
Symbol
Test Conditions
IXGH 30N60B2D1 VCES
IXGT 30N60B2D1 IC25
VCE(sat)
tfi typ
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C (limited by leads)
70
A
IC110
TC = 110°C
30
A
ICM
TC = 25°C, 1 ms
150
A
SSOA
(RBSOA)
PC
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ ≤ 600 V
TC = 25°C
ICM = 60
A
190
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
TJ
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Mounting torque (M3) (TO-247)
Weight
TO-247
TO-268
Symbol
Test Conditions
VGE(th)
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= 24 A, VGE = 15 V
© 2004 IXYS All rights reserved
1.13/10Nm/lb.in.
6
4
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
C (TAB)
G
2.5
TJ = 25°C
TJ = 150°C
TJ = 25°C
5.0
V
200
3
µA
mA
±100
nA
1.8
V
C
E
TO-268 (IXGT)
G
E
G = Gate,
E = Emitter,
C (TAB)
C = Collector,
TAB = Collector
Features
z
z
z
Medium frequency IGBT
Square RBSOA
High current handling capability
MOS Gate turn-on
- drive simplicity
Applications
z
z
z
= 250 µA, VCE = VGE
IC
TO-247 AD (IXGH)
z
Md
= 600 V
= 70 A
< 1.8 V
= 82 ns
z
z
z
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
DS99134A(04/04)
IXGH 30N60B2D1
IXGT 30N60B2D1
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 24 A; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
18
S
1500
pF
145
pF
40
pF
66
nC
9
nC
22
nC
13
ns
15
ns
∅P
Cies
Coes
26
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
Qg
Qge
IC = 24 A, VGE = 15 V, VCE = 300 V
Qgc
td(on)
tri
Inductive load, TJ = 25°°C
td(off)
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
tfi
Eoff
110
200
ns
82
150
ns
0.32
0.6 mJ
13
ns
td(on)
tri
Eon
td(off)
tfi
Inductive load, TJ = 125°°C
IC = 24 A, VGE = 15 V
VCE = 400 V, RG = 5 Ω
Eoff
17
ns
0.22
mJ
200
ns
150
ns
0.9
mJ
RthJC
RthCK
TO-247 AD Outline
e
Dim.
Millimeter
Min. Max.
A
4.7
5.3
2.2
2.54
A1
2.2
2.6
A2
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
0.65 K/W
(TO-247)
Reverse Diode (FRED)
0.25
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VF
IF = 30 A, VGE = 0 V, Pulse test
t ≤ 300 µs, duty cycle d ≤ 2 %
IRM
t rr
IF = 30 A, VGE = 0 V, -diF/dt =100 A/µs, TJ = 100°C
VR = 100 V
TJ = 100°C 100
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
25
TJ =150°C
1.6
2.5
V
V
4
A
ns
ns
0.9 K/W
RthJC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505
IXGH 30N60B2D1
IXGT 30N60B2D1
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
300
50
VGE = 15V
13V
11V
45
40
9V
I C - Amperes
I C - Amperes
35
30
7V
25
20
15
VGE = 15V
250
13V
200
11V
150
9V
100
7V
10
50
5
5V
5V
0
0
0.5
1
1.5
2
2.5
0
3
2
4
6
12
14
16
18
1.3
50
VGE = 15V
13V
11V
40
35
7V
30
25
20
15
5V
10
I C = 48A
1.2
9V
V C E (sat)- Normalized
45
V GE = 15V
1.1
1.0
I C = 24A
0.9
0.8
5
I C = 12A
0.7
0
0.5
1
1.5
2
2.5
-50
3
-25
0
25
50
75
100
125
150
12
13
TJ - Degrees Centigrade
V CE - Volts
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
Fig. 6. Input Adm ittance
250
4.2
TJ = 25ºC
3.9
225
TJ = -40ºC
25ºC
125ºC
200
3.6
3.3
I C = 48A
24A
12A
3
2.7
I C - Amperes
VC E - Volts
10
Fig. 4. Dependence of V CE(sat) on
Tem perature
Fig. 3. Output Characteristics
@ 125 Deg. C
I C - Amperes
8
V C E - Volts
V C E - Volts
2.4
175
150
125
100
2.1
75
1.8
50
1.5
25
1.2
0
5
6
7
8
9
10 11
12 13 14 15 16 17
V G E - Volts
© 2004 IXYS All rights reserved
4
5
6
7
8
9
V G E - Volts
10
11
IXGH 30N60B2D1
IXGT 30N60B2D1
Fig. 8. Dependence of Turn-Off
Energy on RG
Fig. 7. Transconductance
45
2.7
TJ = -40ºC
25ºC
125ºC
40
2.1
30
E off - milliJoules
g f s - Siemens
35
2.4
25
20
15
1.8
TJ = 125ºC
VGE = 15V
VCE = 400V
1.5
1.2
0.9
10
0.6
5
0.3
0
I C = 48A
I C = 24A
I C = 12A
0
0
25
50
75
100 125 150 175 200 225 250
0
10
20
30
I C - Amperes
2
60
70
80
2
R G = 5Ω
VGE = 15V
VCE = 400V
1.8
1.6
1.6
1.4
1.2
TJ = 125ºC
1
0.8
0.6
TJ = 25ºC
0.4
1.2
1
0.6
0.4
0
0
20
25
30
35
40
I C = 24A
0.8
0.2
15
I C = 48A
1.4
0.2
10
R G = 5Ω
VGE = 15V
VCE = 400V
1.8
E off - milliJoules
E off - MilliJoules
50
Fig. 10. Dependence of Turn-Off
Energy on Tem perature
Fig. 9. Dependence of Turn-Off
Energy on IC
45
50
I C = 12A
25
35
I C - Amperes
45
55
65
75
85
95
105 115 125
TJ - Degrees Centigrade
Fig. 11. Dependence of Turn-Off
Sw itching Tim e on RG
Fig. 12. Dependence of Turn-Off
Sw itching Tim e on IC
260
700
td(off)
tfi - - - - - -
600
TJ = 125ºC
VGE = 15V
VCE = 400V
500
400
I C = 12A
300
I C = 24A
200
td(off)
tfi - - - - - -
240
Switching Time - nanosecond
Switching Time - nanosecond
40
R G - Ohms
I C = 48A
100
220
R G = 5Ω
VGE = 15V
VCE = 400V
200
180
TJ = 125ºC
160
140
120
100
TJ = 25ºC
80
60
0
10
20
30
40
50
60
70
80
R G - Ohms
10
15
20
25
30
35
I C - Amperes
40
45
50
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505
IXGH 30N60B2D1
IXGT 30N60B2D1
Fig. 13. Dependence of Turn-Off
Sw itching Tim e on Tem perature
Fig. 14. Gate Charge
15
200
td(off)
tfi - - - - - -
180
R G = 5Ω
VGE = 15V
VCE = 400V
I C = 12A
24A
48A
VCE = 300V
I C = 24A
I G = 10mA
12
VG E - Volts
Switching Time - nanosecond
220
160
140
9
6
120
I C = 48A
24A
12A
100
3
80
0
25
35
45
55
65
75
85
95
TJ - Degrees Centigrade
105 115 125
0
10
20
30
40
50
60
70
Q G - nanoCoulombs
Fig. 15. Capacitance
10000
Capacitance - p F
f = 1 MHz
C ies
1000
C oes
100
C res
10
0
5
10
15
20
25
V C E - Volts
30
35
40
Fig. 16. Maxim um Transient Therm al Resistance
R (th) J C - (ºC/W)
1.0
0.5
0.1
1
© 2004 IXYS All rights reserved
10
Pulse Width - milliseconds
100
1000
IXGH 30N60B2D1
IXGT 30N60B2D1
60
A
1000
50
IF
800
Qr
600
25
IF= 60A
IF= 30A
IF= 15A
IRM
20
30
15
TVJ=100°C
400
20
10
TVJ=25°C
200
10
0
TVJ= 100°C
VR = 300V
A
IF= 60A
IF= 30A
IF= 15A
40
TVJ=150°C
30
TVJ= 100°C
VR = 300V
nC
0
1
2
5
0
100
3 V
A/µs 1000
-diF/dt
VF
Fig. 17. Forward current IF versus VF
Fig. 18. Reverse recovery charge Qr
versus -diF/dt
2.0
90
Kf
200
600 A/µs
800 1000
-diF/dt
400
Fig. 19. Peak reverse current IRM
versus -diF/dt
1.00
TVJ= 100°C
IF = 30A
V
VFR
15
trr
1.5
0
20
TVJ= 100°C
VR = 300V
ns
0
µs
tfr
0.75
VFR
tfr
80
IF= 60A
IF= 30A
IF= 15A
1.0
IRM
10
0.50
5
0.25
70
0.5
Qr
0.0
0
40
80
120 °C 160
60
0
200
TVJ
400
600
800 1000
A/µs
0
0
200
400
-diF/dt
Fig.
,II
Fig.20.
20.Dynamic
Dynamicparameters
parametersQQ
r r,RM
RM
versus
versusTVJ
TVJ
Fig. 21. Recovery time trr versus
-diF/dt
1
K/W
0.00
600 A/µs
800 1000
diF/dt
Fig. 22. Peak forward voltage VFR
and tfr versus diF/dt
Constants for ZthJC calculation:
i
1
2
3
0.1
ZthJC
Rthi (K/W)
ti (s)
0.502
0.193
0.205
0.0052
0.0003
0.0162
0.01
0.001
0.00001
DSEP 29-06
0.0001
0.001
0.01
0.1
s
t
1
Fig. 23. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505