Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM IXGR 60N60B2 IXGR 60N60B2D1 B2-Class High Speed IGBTs (Electrically Isolated Back Surface) VCES IC25 VCE(sat) tfi(typ) = 600 V = 75 A = 2.0 V = 100 ns D1 Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C 47 A ICM TC = 25°C, 1 ms 300 A SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω ICM = 150 A (RBSOA) Clamped inductive load @ VCE ≤ 600 V PC TC = 25°C 250 W C G = Gate E = Emitter -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 2500 V 5 g 300 °C 50/60 Hz, RMS, t = 1m Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s z z z z z z z z Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. IC ICES VCE = VCES VGE = 0 V 3.0 TJ = 125°C 5.0 V 300 5 µA mA nA IGES VCE = 0 V, VGE = ±20 V ±100 VCE(sat) IC = 50 A, VGE = 15 V Note 1 2.0 © 2004 IXYS All rights reserved C = Collector DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation HDMOSTM process MOS Gate turn-on - drive simplicity Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages z = 250 µA, VCE = VGE VGE(th) (ISOLATED TAB) Applications z Symbol E Features z TJ VISOL PLUS247(IXGR) E153432 z z Easy assembly High power density Very fast switching speeds for high frequency applications V DS99161(04/04) IXGR 60N60B2 IXGR 60N60B2D1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 58 S 3900 340 pF pF Cres 100 pF Qg Qge 170 25 nC nC 57 nC 28 ns 30 ns gfs Cies Coes IC = 50 A; VCE = 10 V, Note 1 40 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 50 A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri Inductive load, TJ = 25°°C td(off) IC = 50 A, VGE = 15 V 160 270 ns VCE = 400 V, RG = Roff = 3.3 Ω 100 170 ns tfi Eoff 1.0 2.5 mJ td(on) tri Eon td(off) tfi Eoff 28 36 1.5 310 240 2.8 ns ns mJ ns ns mJ 0.15 0.5 K/W K/W Inductive load, TJ = 125°°C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2.0 Ω RthJC RthCK Reverse Diode (FRED) Symbol Test Conditions VF IF = 60 A, VGE = 0 V, Note 1 IRM t rr ISOPLUS 247 Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TJ = 150°C IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V 35 RthJC 2.1 1.4 V V 8.3 A ns 0.85 K/W Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGR 60N60B2 IXGR 60N60B2D1 Fig. 1. Output Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 deg. C 350 100 VGE = 15V 13V 11V 90 80 300 11V 250 60 I C - Amperes 70 I C - Amperes VGE = 15V 13V 9V 7V 50 40 30 9V 200 150 7V 100 20 10 50 5V 5V 0 0 0.5 1 1.5 2 2.5 3 0 1 2 3 Fig. 3. Output Characteristics @ 125 Deg. C 5 6 7 8 Fig. 4. Dependence of V CE(sat) on Tem perature 100 1.4 VGE = 15V 13V 11V 80 9V V GE = 15V 1.3 70 V C E (sat)- Normalized 90 I C - Amperes 4 V C E - Volts V C E - Volts 7V 60 50 40 30 I C = 100A 1.2 1.1 I C = 50A 1.0 0.9 0.8 20 0.7 5V 10 0 I C = 25A 0.6 0.5 1 1.5 2 2.5 3 -50 -25 0 V CE - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 300 3.7 TJ = 25ºC 3.4 250 I C = 100A 50A 25A 2.8 2.5 I C - Amperes VC E - Volts 3.1 2.2 200 150 100 1.9 TJ = 125ºC -40ºC 50 TJ = 25ºC 1.6 0 1.3 5 6 7 8 9 10 11 12 V G E - Volts © 2004 IXYS All rights reserved 13 14 15 16 17 4 5 6 7 V G E - Volts 8 9 10 IXGR 60N60B2 IXGR 60N60B2D1 Fig. 8. Dependence of Turn-Off Energy on RG Fig. 7. Transconductance 100 10 90 9 TJ = -40ºC 25ºC 125ºC g f s - Siemens 70 8 E off - milliJoules 80 60 50 40 30 I C = 100A 7 6 5 4 20 3 10 2 0 I C = 50A I C = 25A 1 0 50 100 150 200 250 300 0 5 10 15 20 25 30 35 40 45 I C - Amperes R G - Ohms Fig. 9. Dependence of Turn-Off Energy on Ic Fig. 10. Dependence of Turn-Off Energy on Tem perature 7 50 7 R G = 3.3Ω VGE = 15V VCE = 400V 6 5 4 R G = 3.3Ω VGE = 15V VCE = 400V 6 E off - milliJoules E off - MilliJoules TJ = 125ºC VGE = 15V VCE = 400V TJ = 125ºC 3 2 TJ = 25ºC 1 5 I C = 100A 4 3 I C = 50A 2 1 I C = 25A 0 0 20 30 40 50 60 70 80 90 100 25 35 I C - Amperes 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG Fig. 12. Dependence of Turn-Off Sw itching Tim e on Ic 1200 400 1000 Switching Time - nanosecond td(off) tfi - - - - - - 1100 Switching Time - nanosecond 45 TJ = 125ºC VGE = 15V VCE = 400V 900 800 700 600 I C = 25A 500 I C = 50A 400 I C = 100A 300 200 td(off) tfi - - - - - - 350 R G = 3.3Ω VGE = 15V VCE = 400V 300 TJ = 125ºC 250 200 150 TJ = 25ºC 100 50 0 5 10 15 20 25 30 35 40 45 50 R G - Ohms IXYS reserves the right to change limits, test conditions, and dimensions. 20 30 40 50 60 70 I C - Amperes 80 90 100 IXGR 60N60B2 IXGR 60N60B2D1 Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature Fig. 14. Gate Charge 350 15 Switching Time - nanosecond td(off) 300 VCE = 300V I C = 25A 50A 100A tfi - - - - - R G = 3.3Ω 250 12 I G = 10mA VGE - Volts VGE = 15V VCE = 400V 200 150 I C = 100A 50A 25A 100 I C = 50A 9 6 3 0 50 25 35 45 55 65 75 85 95 105 115 125 0 20 40 60 80 100 120 140 160 180 QG - nanoCoulombs TJ - Degrees Centigrade Fig. 15. Capacitance 10000 Capacitance - pF f = 1 MHz C ies 1000 C oes 100 C res 10 0 5 10 15 20 25 30 35 40 V CE - Volts Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is t an ce 0.55 0.5 R( t h ) J C - ºC / W 0.45 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 1 10 100 Puls e W idth - millis ec onds © 2004 IXYS All rights reserved 1000 IXGR 60N60B2 IXGR 60N60B2D1 160 A 140 IF 4000 nC 120 80 TVJ= 100°C VR = 300V 3000 TVJ= 25°C 60 IF=120A IF= 60A IF= 30A Qr 100 TVJ=100°C 80 TVJ= 100°C VR = 300V A IRM 2000 40 1000 20 IF=120A IF= 60A IF= 30A TVJ=150°C 60 40 20 0 0 1 2 0 100 V 0 A/µs 1000 -diF/dt VF Fig. 17. Forward current IF versus VF Fig. 18. Reverse recovery charge Qr versus -diF/dt 140 2.0 TVJ= 100°C VR = 300V ns 130 trr 1.5 Kf 0 400 600 A/µs 800 1000 -diF/dt Fig. 19. Peak reverse current IRM versus -diF/dt 20 1.6 V VFR 15 µs tfr IF=120A IF= 60A IF= 30A 110 1.2 VFR tfr 120 1.0 200 10 0.8 5 0.4 IRM 100 0.5 Qr 90 0.0 80 0 40 80 120 °C 160 0 0 200 400 600 TVJ 800 1000 A/µs 0 200 400 -diF/dt Fig. 20. Dynamic parameters Qr, IRM versus TVJ Fig. 21. Recovery time trr versus -diF/dt 1 0.0 600 A/µs 800 1000 diF/dt Fig. 22. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 4 ZthJC 0.01 0.001 0.0001 0.00001 TVJ= 100°C IF = 60A DSEP 2x61-06A 0.0001 0.001 0.01 s 0.1 t Fig. 23. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. 1 Rthi (K/W) ti (s) 0.3073 0.3533 0.0887 0.1008 0.0055 0.0092 0.0007 0.0399