IGBT with Diode Short Circuit SOA Capability IXSN 80N60BD1 VCES IC25 VCE(sat) tfi = = = = 600 V 160 A 2.5 V 180 ns C G Preliminary Data Sheet E E Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 A V GES Continuous ±20 V VGEM Transient ±30 V IC25 IL TC = 25°C (Silicon chip capability) Lead current limit (RMS) 160 100 A A E = Emitter c, C = Collector IC90 TC = 90°C 80 A G = Gate, E = Emitter c I CM TC = 25°C, 1 ms 300 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load ICM = 160 @ 0.8 VCES A t SC (SCSOA) VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 Ω, non repetitive 10 µs PC TC = 25°C 420 W V ISOL 50/60 Hz IISOL ≤ 1 mA 2500 3000 V~ V~ t = 1 min t=1s V -55 ... +150 °C 150 °C T stg -55 ... +150 °C Md Mounting torque 0.4/6 Nm/lb.in. Weight 30 Symbol Test Conditions B V CES IC = 500 µA, VGE = 0 V V GE(th) IC = 8 mA, VCE = VGE I CES VCE = VCES VGE = 0 V I GES VCE = 0 V, VGE = ±20 V VCE(sat) IC g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 600 4 TJ = 25°C TJ = 125°C = IC90, VGE = 15 V; Note 1 E G E T JM TJ miniBLOC, SOT-227 B E153432 V 8 V 200 2 µA mA ±200 nA 2.5 V C c Either Emitter terminal can be used as Main or Kelvin Emitter Features International standard package z Aluminium-nitride isolation - high power dissipation z Isolation voltage 3000 V~ z UL registered E 153432 z Low VCE(sat) - for minimum on-state conduction losses z Fast Recovery Epitaxial Diode - short trr and IRM z Low collector-to-case capacitance (< 60 pF) - reduced RFI z Low package inductance (< 10 nH) - easy to drive and to protect z Applications z AC motor speed control z DC servo and robot drives z DC choppers z Uninterruptible power supplies (UPS) z Switch-mode and resonant-mode power supplies Advantages z Space savings z Easy to mount with 2 screws z High power density IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved DS98890A(05/04) IXSN 80N60BD1 Symbol Test Conditions gfs IC = 60 A; VCE = 10 V, Note1 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 52 S 6600 pF 720 pF C res 196 pF Qg 200 nC 70 nC 60 nC Inductive load, TJ = 25°°C 60 ns IC = IC90, VGE = 15 V, L = 100 µH, VCE = 0.8 VCES, RG = 2.7 Ω 50 ns C ies Coes Qge VCE = 25 V, VGE = 0 V, f = 1 MHz IC = IC90, VGE = 15 V, VCE = 0.5 VCES Qgc t d(on) t ri t d(off) tfi Note 2 Eoff t d(on) t ri E on t d(off) tfi VCE = 0.8 VCES, RG = 2.7 Ω Note 2 Eoff Inches Min. Max. 120 200 ns A B 31.50 7.80 31.88 8.20 1.240 0.307 1.255 0.323 1.8 3.5 mJ C D 4.09 4.09 4.29 4.29 0.161 0.161 0.169 0.169 60 ns E F 4.09 14.91 4.29 15.11 0.161 0.587 0.169 0.595 60 ns G H 30.12 38.00 30.30 38.23 1.186 1.496 1.193 1.505 4.8 mJ J K 11.68 8.92 12.22 9.60 0.460 0.351 0.481 0.378 190 ns L M 0.76 12.60 0.84 12.85 0.030 0.496 0.033 0.506 160 ns 3.3 mJ N O 25.15 1.98 25.42 2.13 0.990 0.078 1.001 0.084 P Q 4.95 26.54 5.97 26.90 0.195 1.045 0.235 1.059 0.30 K/W R S 3.94 4.72 4.42 4.85 0.155 0.186 0.174 0.191 K/W T U 24.59 -0.05 25.07 0.1 0.968 -0.002 0.987 0.004 Characteristic Values (T J = 25°C, unless otherwise specified) Symbol Test Conditions VF IF = 60 A, Note 1 TJ = 150°C IRM IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs V R = 100 V, TJ = 100°C IF = 1 A, -di/dt = 50 A/µs, VR = 30 V t rr Millimeter Min. Max. ns 0.05 Reverse Diode (FRED) Dim. 280 R thJC R thCK M4 screws (4x) supplied 140 Inductive load, T J = 125°°C IC = IC90, VGE = 15 V, L = 100 µH miniBLOC, SOT-227 B typ. max. 2.05 1.4 V V 8.0 A 35 ns 0.85 K/W RthJC Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2% Note: 2. Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXSN 80N60BD1 Fig. 1. Output Characte ristics @ 25 Deg. C 300 80 VGE = 17V 15V 13V 11V 60 VGE = 17V 15V 270 210 50 40 9V 30 11V 180 150 120 90 20 9V 60 10 30 7V 0 7V 0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3 0 1 2 3 V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C 5 6 7 8 9 1.6 VGE = 17V 15V 13V 11V 60 VGE = 15V 1.5 V C E (sat)- Normalized 70 I C - Amperes 4 V C E - Volts Fig. 4. De pende nce of V CE(sat) on Tem perature 80 50 9V 40 30 20 7V 10 I C = 160A 1.4 1.3 1.2 1.1 I C = 80A 1.0 0.9 I C = 40A 0.8 0 0.7 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 -50 3 -25 V CE - Volts 0 25 50 75 100 125 150 12 13 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs . Gate-to-Em iiter voltage Fig. 6. Input Adm ittance 320 10 TJ = 25ºC 9 280 240 8 I C = 160A 80A 40A 7 I C - Amperes VC E - Volts 13V 240 I C - Amperes 70 I C - Amperes Fig. 2. Extended Output Characte ristics @ 25 de g. C 6 5 200 160 120 4 80 3 40 TJ = 125ºC 25ºC -40ºC 0 2 6 7 8 9 10 11 12 13 V G E - Volts © 2004 IXYS All rights reserved 14 15 16 17 5 6 7 8 9 10 V G E - Volts 11 IXSN 80N60BD1 Fig. 8. Dependence of Turn-off Energy Loss on RG Fig. 7. Transconductance 90 14 80 g f s - Siemens 60 50 40 30 I C = 160A 10 E off - milliJoules TJ = -40ºC 25ºC 125ºC 70 TJ = 125ºC VGE = 15V VCE = 480V 12 8 6 I C = 80A 4 20 2 10 0 I C = 40A 0 0 40 80 120 160 200 240 280 320 2 4 6 8 I C - Amperes Fig. 9. Dependence of Turn-Off Energy Loss on IC E off - MilliJoules 9 8 7 6 9 TJ = 125ºC 5 4 8 5 4 2 2 1 1 0 0 100 I C - Amperes 120 140 I C = 80A I C = 40A 25 160 45 55 65 75 85 95 105 115 125 Fig. 12. Dependence of Turn-off Sw itching Tim e on IC 325 275 300 275 250 I C = 160A I C = 80A 225 I C = 40A 175 td(off) tfi - - - - - - 150 TJ = 125ºC VGE = 15V VCE = 480V 125 100 Switching Time - nanoseconds Switching Time - nanoseconds 35 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-off Sw itching Tim e on RG 200 I C = 160A 6 3 80 16 7 3 60 R G = 2.7Ω R G = 10Ω - - - VGE = 15V VCE = 480V 10 TJ = 25ºC 40 14 11 E off - milliJoules R G = 2.7Ω R G = 10Ω - - - VGE = 15V VCE = 480V 12 Fig. 10. Dependence of Turn-off Energy Loss on Tem perature 11 10 10 R G - Ohms td(off) tfi - - - - - - 250 R G = 2.7Ω VGE = 15V VCE = 480V 225 200 TJ = 125ºC 175 150 125 TJ = 25ºC 100 75 75 0 2 4 6 8 10 R G - Ohms 12 14 16 18 40 60 80 100 120 140 160 I C - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXSN 80N60BD1 Fig. 13. Dependence of Turn-off Sw itching Tim e on Tem perature 300 12 R G = 2.7Ω VGE = 15V VCE = 480V 250 225 200 175 I C = 40A I C = 80A 150 VCE = 300V IC = 80A IG = 10mA I C = 160A VG E - Volts Switching Time - nanoseconds 15 td(off) tfi - - - - - - 275 Fig. 14. Gate Charge 125 9 6 3 100 I C = 160A 75 0 25 35 45 55 65 75 85 95 105 115 125 0 20 40 TJ - Degrees Centigrade 60 80 100 120 140 160 180 200 Q G - nanoCoulombs Fig. 15. Capacitance 10000 Capacitance - p F f = 1 MHz C ies 1000 C oes 100 C res 10 0 5 10 15 20 25 V C E - Volts 30 35 40 Fig. 16. Maxim um Transient Therm al Resistance R (th) J C - (ºC/W) 1.0 0.1 0.0 1 © 2004 IXYS All rights reserved 10 Pulse Width - milliseconds 100 1000 IXSN 80N60BD1 4000 160 A 140 IF nC 120 3000 TVJ= 25°C 100 TVJ=100°C 2000 TVJ= 100°C VR = 300V A 60 IF=120A IF= 60A IF= 30A Qr 80 80 TVJ= 100°C VR = 300V IRM IF=120A IF= 60A IF= 30A 40 TVJ=150°C 60 1000 40 20 20 0 0 1 2 0 100 V VF Fig. 17. Forward current IF versus VF 0 A/µs 1000 -diF/dt Fig. 18. Reverse recovery charge Qr versus -diF/dt 2.0 140 trr 1.5 Kf 120 1.0 110 400 600 A/µs 800 1000 -diF/dt 20 1.6 V VFR 15 µs 1.2 VFR tfr IF=120A IF= 60A IF= 30A IRM 200 Fig. 19. Peak reverse current IRM versus -diF/dt TVJ= 100°C VR = 300V ns 130 0 10 0.8 5 0.4 tfr 100 0.5 0.0 Qr 0 40 90 80 80 120 °C 160 0 200 400 TVJ 600 0 800 1000 A/µs TVJ= 100°C IF = 60A 0 200 400 -diF/dt Fig. 20. Dynamic parameters Qr, IRM versus TVJ Fig. 21. Recovery time trr versus -diF/dt 1 0.0 600 A/µs 800 1000 diF/dt Fig. 22. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 1 2 3 4 ZthJC 0.01 Rthi (K/W) ti (s) 0.3073 0.3533 0.0887 0.1008 0.0055 0.0092 0.0007 0.0399 0.001 0.0001 0.00001 Fig. 7 DSEP 2x61-06A 0.0001 0.001 0.01 0.1 s t 1 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344