IXYS IXSN80N60BD1

IGBT with Diode
Short Circuit SOA Capability
IXSN 80N60BD1 VCES
IC25
VCE(sat)
tfi
=
=
=
=
600 V
160 A
2.5 V
180 ns
C
G
Preliminary Data Sheet
E
E
Symbol
Test Conditions
Maximum Ratings
V CES
TJ = 25°C to 150°C
600
V CGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
A
V GES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
IL
TC = 25°C (Silicon chip capability)
Lead current limit (RMS)
160
100
A
A
E = Emitter c,
C = Collector
IC90
TC = 90°C
80
A
G = Gate,
E = Emitter c
I CM
TC = 25°C, 1 ms
300
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 5 Ω
Clamped inductive load
ICM = 160
@ 0.8 VCES
A
t SC
(SCSOA)
VGE = 15 V, VCE = 360 V, TJ = 125°C
RG = 22 Ω, non repetitive
10
µs
PC
TC = 25°C
420
W
V ISOL
50/60 Hz
IISOL ≤ 1 mA
2500
3000
V~
V~
t = 1 min
t=1s
V
-55 ... +150
°C
150
°C
T stg
-55 ... +150
°C
Md
Mounting torque
0.4/6 Nm/lb.in.
Weight
30
Symbol
Test Conditions
B V CES
IC
= 500 µA, VGE = 0 V
V GE(th)
IC
= 8 mA, VCE = VGE
I CES
VCE = VCES
VGE = 0 V
I GES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
600
4
TJ = 25°C
TJ = 125°C
= IC90, VGE = 15 V; Note 1
E
G
E
T JM
TJ
miniBLOC, SOT-227 B
E153432
V
8
V
200
2
µA
mA
±200
nA
2.5
V
C
c Either Emitter terminal can be used as
Main or Kelvin Emitter
Features
International standard package
z
Aluminium-nitride isolation
- high power dissipation
z
Isolation voltage 3000 V~
z
UL registered E 153432
z
Low VCE(sat)
- for minimum on-state conduction
losses
z
Fast Recovery Epitaxial Diode
- short trr and IRM
z
Low collector-to-case capacitance
(< 60 pF)
- reduced RFI
z
Low package inductance (< 10 nH)
- easy to drive and to protect
z
Applications
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switch-mode and resonant-mode
power supplies
Advantages
z
Space savings
z
Easy to mount with 2 screws
z
High power density
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
DS98890A(05/04)
IXSN 80N60BD1
Symbol
Test Conditions
gfs
IC = 60 A; VCE = 10 V,
Note1
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
52
S
6600
pF
720
pF
C res
196
pF
Qg
200
nC
70
nC
60
nC
Inductive load, TJ = 25°°C
60
ns
IC = IC90, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = 2.7 Ω
50
ns
C ies
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
t d(on)
t ri
t d(off)
tfi
Note 2
Eoff
t d(on)
t ri
E on
t d(off)
tfi
VCE = 0.8 VCES, RG = 2.7 Ω
Note 2
Eoff
Inches
Min.
Max.
120
200
ns
A
B
31.50
7.80
31.88
8.20
1.240
0.307
1.255
0.323
1.8
3.5
mJ
C
D
4.09
4.09
4.29
4.29
0.161
0.161
0.169
0.169
60
ns
E
F
4.09
14.91
4.29
15.11
0.161
0.587
0.169
0.595
60
ns
G
H
30.12
38.00
30.30
38.23
1.186
1.496
1.193
1.505
4.8
mJ
J
K
11.68
8.92
12.22
9.60
0.460
0.351
0.481
0.378
190
ns
L
M
0.76
12.60
0.84
12.85
0.030
0.496
0.033
0.506
160
ns
3.3
mJ
N
O
25.15
1.98
25.42
2.13
0.990
0.078
1.001
0.084
P
Q
4.95
26.54
5.97
26.90
0.195
1.045
0.235
1.059
0.30 K/W
R
S
3.94
4.72
4.42
4.85
0.155
0.186
0.174
0.191
K/W
T
U
24.59
-0.05
25.07
0.1
0.968
-0.002
0.987
0.004
Characteristic Values
(T J = 25°C, unless otherwise specified)
Symbol
Test Conditions
VF
IF = 60 A, Note 1
TJ = 150°C
IRM
IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs
V R = 100 V, TJ = 100°C
IF = 1 A, -di/dt = 50 A/µs, VR = 30 V
t rr
Millimeter
Min.
Max.
ns
0.05
Reverse Diode (FRED)
Dim.
280
R thJC
R thCK
M4 screws (4x) supplied
140
Inductive load, T J = 125°°C
IC = IC90, VGE = 15 V, L = 100 µH
miniBLOC, SOT-227 B
typ.
max.
2.05
1.4
V
V
8.0
A
35
ns
0.85 K/W
RthJC
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2%
Note: 2. Remarks: Switching times may increase for
VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXSN 80N60BD1
Fig. 1. Output Characte ristics
@ 25 Deg. C
300
80
VGE = 17V
15V
13V
11V
60
VGE = 17V
15V
270
210
50
40
9V
30
11V
180
150
120
90
20
9V
60
10
30
7V
0
7V
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
0
1
2
3
V C E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
5
6
7
8
9
1.6
VGE = 17V
15V
13V
11V
60
VGE = 15V
1.5
V C E (sat)- Normalized
70
I C - Amperes
4
V C E - Volts
Fig. 4. De pende nce of V CE(sat) on
Tem perature
80
50
9V
40
30
20
7V
10
I C = 160A
1.4
1.3
1.2
1.1
I C = 80A
1.0
0.9
I C = 40A
0.8
0
0.7
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
-50
3
-25
V CE - Volts
0
25
50
75
100
125
150
12
13
TJ - Degrees Centigrade
Fig. 5. Collector-to-Em itter Voltage
vs . Gate-to-Em iiter voltage
Fig. 6. Input Adm ittance
320
10
TJ = 25ºC
9
280
240
8
I C = 160A
80A
40A
7
I C - Amperes
VC E - Volts
13V
240
I C - Amperes
70
I C - Amperes
Fig. 2. Extended Output Characte ristics
@ 25 de g. C
6
5
200
160
120
4
80
3
40
TJ = 125ºC
25ºC
-40ºC
0
2
6
7
8
9
10
11
12
13
V G E - Volts
© 2004 IXYS All rights reserved
14
15
16
17
5
6
7
8
9
10
V G E - Volts
11
IXSN 80N60BD1
Fig. 8. Dependence of Turn-off
Energy Loss on RG
Fig. 7. Transconductance
90
14
80
g f s - Siemens
60
50
40
30
I C = 160A
10
E off - milliJoules
TJ = -40ºC
25ºC
125ºC
70
TJ = 125ºC
VGE = 15V
VCE = 480V
12
8
6
I C = 80A
4
20
2
10
0
I C = 40A
0
0
40
80
120
160
200
240
280
320
2
4
6
8
I C - Amperes
Fig. 9. Dependence of Turn-Off
Energy Loss on IC
E off - MilliJoules
9
8
7
6
9
TJ = 125ºC
5
4
8
5
4
2
2
1
1
0
0
100
I C - Amperes
120
140
I C = 80A
I C = 40A
25
160
45
55
65
75
85
95
105 115 125
Fig. 12. Dependence of Turn-off
Sw itching Tim e on IC
325
275
300
275
250
I C = 160A
I C = 80A
225
I C = 40A
175
td(off)
tfi - - - - - -
150
TJ = 125ºC
VGE = 15V
VCE = 480V
125
100
Switching Time - nanoseconds
Switching Time - nanoseconds
35
TJ - Degrees Centigrade
Fig. 11. Dependence of Turn-off
Sw itching Tim e on RG
200
I C = 160A
6
3
80
16
7
3
60
R G = 2.7Ω
R G = 10Ω - - - VGE = 15V
VCE = 480V
10
TJ = 25ºC
40
14
11
E off - milliJoules
R G = 2.7Ω
R G = 10Ω - - - VGE = 15V
VCE = 480V
12
Fig. 10. Dependence of Turn-off
Energy Loss on Tem perature
11
10
10
R G - Ohms
td(off)
tfi - - - - - -
250
R G = 2.7Ω
VGE = 15V
VCE = 480V
225
200
TJ = 125ºC
175
150
125
TJ = 25ºC
100
75
75
0
2
4
6
8
10
R G - Ohms
12
14
16
18
40
60
80
100
120
140
160
I C - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344
IXSN 80N60BD1
Fig. 13. Dependence of Turn-off
Sw itching Tim e on Tem perature
300
12
R G = 2.7Ω
VGE = 15V
VCE = 480V
250
225
200
175
I C = 40A
I C = 80A
150
VCE = 300V
IC = 80A
IG = 10mA
I C = 160A
VG E - Volts
Switching Time - nanoseconds
15
td(off)
tfi - - - - - -
275
Fig. 14. Gate Charge
125
9
6
3
100
I C = 160A
75
0
25
35
45
55
65
75
85
95
105 115 125
0
20
40
TJ - Degrees Centigrade
60
80
100 120 140 160 180 200
Q G - nanoCoulombs
Fig. 15. Capacitance
10000
Capacitance - p F
f = 1 MHz
C ies
1000
C oes
100
C res
10
0
5
10
15
20
25
V C E - Volts
30
35
40
Fig. 16. Maxim um Transient Therm al Resistance
R (th) J C - (ºC/W)
1.0
0.1
0.0
1
© 2004 IXYS All rights reserved
10
Pulse Width - milliseconds
100
1000
IXSN 80N60BD1
4000
160
A
140
IF
nC
120
3000
TVJ= 25°C
100
TVJ=100°C
2000
TVJ= 100°C
VR = 300V
A
60
IF=120A
IF= 60A
IF= 30A
Qr
80
80
TVJ= 100°C
VR = 300V
IRM
IF=120A
IF= 60A
IF= 30A
40
TVJ=150°C
60
1000
40
20
20
0
0
1
2
0
100
V
VF
Fig. 17. Forward current IF versus VF
0
A/µs 1000
-diF/dt
Fig. 18. Reverse recovery charge Qr
versus -diF/dt
2.0
140
trr
1.5
Kf
120
1.0
110
400
600 A/µs
800 1000
-diF/dt
20
1.6
V
VFR
15
µs
1.2
VFR
tfr
IF=120A
IF= 60A
IF= 30A
IRM
200
Fig. 19. Peak reverse current IRM
versus -diF/dt
TVJ= 100°C
VR = 300V
ns
130
0
10
0.8
5
0.4
tfr
100
0.5
0.0
Qr
0
40
90
80
80
120 °C 160
0
200
400
TVJ
600
0
800 1000
A/µs
TVJ= 100°C
IF = 60A
0
200
400
-diF/dt
Fig. 20. Dynamic parameters Qr, IRM
versus TVJ
Fig. 21. Recovery time trr versus -diF/dt
1
0.0
600 A/µs
800 1000
diF/dt
Fig. 22. Peak forward voltage VFR and
tfr versus diF/dt
Constants for ZthJC calculation:
K/W
i
0.1
1
2
3
4
ZthJC
0.01
Rthi (K/W)
ti (s)
0.3073
0.3533
0.0887
0.1008
0.0055
0.0092
0.0007
0.0399
0.001
0.0001
0.00001
Fig. 7
DSEP 2x61-06A
0.0001
0.001
0.01
0.1
s
t
1
Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,850,072
4,835,592
4,931,844
4,881,106
5,034,796
5,017,508
5,063,307
5,049,961
5,237,481
5,187,117
5,381,025
5,486,715
6,404,065B1
6,306,728B1
6,162,665
6,534,343
6,583,505
6,259,123B1 6,306,728B1 6,683,344