HiPerFAST TM IGBT with Diode IXGK 50N60C2D1 VCES IXGX 50N60C2D1 IC25 VCE(sat) C2-Class High Speed IGBTs tfi(typ) = 600 V = 75 A = 2.5 V = 48 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads) 75 A IC110 TC = 110°C 50 A IF110 TC = 110°C 48 A ICM TC = 25°C, 1 ms SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω (RBSOA) Clamped inductive load @ VCE ≤ 600 V PC TC = 25°C 300 A ICM = 100 A 480 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ Md Mounting torque, TO-264 Weight TO-264 PLUS247 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 40 A, VGE = 15 V Note 1 © 2004 IXYS All rights reserved g g 300 °C Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. = 250 µA, VCE = VGE VGE(th) 10 6 3.0 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 2.1 1.8 5.0 V 650 5 µA mA ±100 nA 2.5 V V TO-264 AA (IXGK) G (TAB) C E PLUS247 (IXGX) G G = Gate E = Emitter C (TAB) E C = Collector Tab = Collector Features • Very high frequency IGBT and anti-parallel FRED in one package • Square RBSOA • High current handling capability • MOS Gate turn-on for drive simplicity • Fast Recovery Epitaxial Diode (FRED) with soft recovery and low IRM Applications • Switch-mode and resonant-mode power supplies • Uninterruptible power supplies (UPS) • DC choppers • AC motor speed control • DC servo and robot drives Advantages • Space savings (two devices in one package) • Easy to mount with 1 screw DS99148A(05/04) IXGK 50N60C2D1 IXGX 50N60C2D1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 51 S 3700 290 pF pF Cres 50 pF Qg Qge 138 25 nC nC 40 nC gfs Cies Coes IC = 40 A; VCE = 10 V, Note 1 40 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 40 A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) Dim. Inductive load, TJ = 25°°C IC = 40 A, VGE = 15 V 18 ns 25 ns 115 150 VCE = 480 V, RG = Roff = 2.0 Ω ns 48 ns Eoff 0.38 0.7 mJ td(on) tri Eon td(off) tfi Eoff 18 25 1.4 170 60 0.74 ns ns mJ ns ns mJ 0.15 0.31 K/W K/W tfi Inductive load, TJ = 125°°C IC = 40 A, VGE = 15 V VCE = 480 V, RG = Roff = 2.0 Ω RthJC RthCK Reverse Diode (FRED) Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 PLUS247 Outline Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions VF IF = 60 A, VGE = 0 V, Note 1 IRM IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C VR = 100 V IF = 1 A; -di/dt = 200 A/ms; VR = 30 V t rr TO-264 AA Outline TJ = 150°C RthJC 35 2.1 1.4 V 8.3 A ns 0.65 K/W Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % Terminals: Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 IXGK 50N60C2D1 IXGX 50N60C2D1 Fig. 1. Output Characte ristics @ 25 Deg. C 80 VGE = 15V 13V 11V 70 320 9V VGE = 15V 13V 280 60 50 40 6V 30 20 200 9V 160 120 7V 80 10 40 5V 0 5V 0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 2 3 V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C VGE = 15V 13V 11V 70 4 5 6 V C E - Volts 7 8 9 10 Fig. 4. De pende nce of V CE(sat) on Tem perature 1.2 9V 60 50 40 V GE = 15V 1.1 7V VC E ( s a t )- Normalized 80 I C - Amperes 11V 240 7V I C - Amperes I C - Amperes Fig. 2. Extended Output Characte ristics @ 25 de g. C 6V 30 20 1.0 I C = 80A 0.9 I C = 40A 0.8 0.7 0.6 10 I C = 20A 5V 0 0.5 0.5 1 1.5 2 2.5 3 3.5 4 25 50 V CE - Volts 75 100 125 150 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 200 4.8 TJ = 25ºC 4.5 180 160 I C = 80A 40A 20A 3.9 3.6 I C - Amperes VC E - Volts 4.2 3.3 140 120 100 80 60 3 TJ = 125ºC 25ºC 40 2.7 20 0 2.4 5 6 7 8 9 10 11 12 V G E - Volts © 2004 IXYS All rights reserved 13 14 15 16 17 4 4.5 5 5.5 6 6.5 7 V G E - Volts 7.5 8 8.5 9 IXGK 50N60C2D1 IXGX 50N60C2D1 Fig. 8. Dependence of Turn-Off Energy on RG Fig. 7. Transconductance 70 3 2.4 50 E o f f - milliJoules g f s - Siemens TJ = 125ºC VGE = 15V VCE = 480V 2.7 TJ = 25ºC 125ºC 60 40 30 20 I C = 80A 2.1 1.8 1.5 1.2 I C = 40A 0.9 0.6 10 0.3 0 I C = 20A 0 0 20 40 60 80 2 100 120 140 160 180 200 4 6 8 I C - Amperes Fig. 9. Dependence of Turn-Off Energy on Ic 1.8 1.4 1.2 TJ = 125ºC 1 16 18 R G = 2Ω R G = 10Ω - - - VGE = 15V VCE = 480V 2.1 E o f f - milliJoules E o f f - MilliJoules 1.6 14 2.4 R G = 2Ω R G = 10Ω - - - VGE = 15V VCE = 480V 1.8 12 Fig. 10. Dependence of Turn-Off Energy on Tem perature 2.2 2 10 R G - Ohms 0.8 0.6 TJ = 25ºC I C = 80A 1.5 1.2 0.9 I C = 40A 0.6 0.4 0.3 0.2 I C = 20A 0 0 20 30 40 50 60 70 25 80 35 45 I C - Amperes Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG 65 75 85 95 105 115 125 Fig. 12. Dependence of Turn-Off Sw itching Tim e on Ic 200 450 td(off) tfi - - - - - - 400 Switching Time - nanoseconds Switching Time - nanoseconds 55 TJ - Degrees Centigrade TJ = 125ºC VGE = 15V VCE = 480V 350 300 250 200 I C = 20A I C = 40A I C = 80A 150 100 50 td(off) tfi - - - - - - 180 R G = 2Ω VGE = 15V VCE = 480V 160 140 TJ = 125ºC 120 100 TJ = 25ºC 80 60 40 2 4 6 8 10 12 14 16 18 R G - Ohms IXYS reserves the right to change limits, test conditions, and dimensions. 20 30 40 50 I C - Amperes 60 70 80 IXGK 50N60C2D1 IXGX 50N60C2D1 Fig. 13. Dependence of Turn-Off Sw itching Tim e on Tem perature Fig. 14. Reverse-Bias Safe Operating Area 110 td(off) tfi - - - - - - 180 100 I C = 20A R G = 2Ω VGE = 15V VCE = 480V 160 140 90 80 120 I C - Amperes Switching Time - nanoseconds 200 I C = 80A 100 80 I C = 40A 60 70 60 50 40 TJ = 125º C 30 R G = 10Ω dV/dT < 10V/ns 20 40 I C = 20A 10 20 0 25 35 45 55 65 75 85 95 TJ - Degrees Centigrade 105 115 125 100 200 V 400 CE 500 600 - Volts Fig. 16. Capacitance Fig. 15. Gate Charge 16 10000 VCE = 300V I C = 40A I G = 10mA 12 f = 1 MHz Capacitance - picoFarrads 14 VG E - Volts 300 10 8 6 4 C ies 1000 C oes 100 2 C res 0 10 0 30 60 90 120 150 0 5 10 Q G - nanoCoulombs 15 20 25 V C E - Volts 30 35 40 Fig. 16. Maxim um Transient The rm al Resistance 0.35 R ( t h ) J C - ºC / W 0.30 0.25 0.20 0.15 0.10 0.05 0.00 1 © 2004 IXYS All rights reserved 10 Pulse Width - milliseconds 100 1000 IXGK 50N60C2D1 IXGX 50N60C2D1 160 A 140 IF 4000 nC 120 3000 TVJ= 25°C 100 TVJ=100°C 2000 TVJ= 100°C VR = 300V A 60 IF=120A IF= 60A IF= 30A Qr 80 80 TVJ= 100°C VR = 300V IRM IF=120A IF= 60A IF= 30A 40 TVJ=150°C 60 40 1000 20 20 0 0 1 2 0 100 V A/µs 1000 -diF/dt VF Fig. 17. Forward current IF versus VF Fig. 18. Reverse recovery charge Qr versus -diF/dt 140 2.0 TVJ= 100°C VR = 300V ns 130 trr 1.5 Kf 120 IF=120A IF= 60A IF= 30A 110 1.0 IRM 0 0 200 400 600 A/µs 800 1000 -diF/dt Fig. 19. Peak reverse current IRM versus -diF/dt 20 1.6 V VFR 15 µs 1.2 tfr tfr VFR 10 0.8 5 0.4 100 0.5 0.0 Qr 0 40 90 80 120 °C 160 80 0 200 400 600 TVJ 800 1000 A/µs 0 0 200 400 -diF/dt Fig. 20. Dynamic parameters Qr, IRM versus TVJ Fig. 21. Recovery time trr versus -diF/dt 1 0.0 600 A/µs 800 1000 diF/dt Fig. 22. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: K/W i 0.1 ZthJC 1 2 3 0.01 Rthi (K/W) ti (s) 0.324 0.125 0.201 0.0052 0.0003 0.0385 Note: Fig. 2 through Fig. 6 show typical values 0.001 0.0001 0.00001 TVJ= 100°C IF = 60A DSEP 60-06A 0.0001 0.001 0.01 0.1 Fig. 23. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. s t 1