IXYS IXGK50N60C2D1

HiPerFAST TM
IGBT with Diode
IXGK 50N60C2D1 VCES
IXGX 50N60C2D1 IC25
VCE(sat)
C2-Class High Speed IGBTs
tfi(typ)
= 600 V
= 75 A
= 2.5 V
= 48 ns
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
V CES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C (limited by leads)
75
A
IC110
TC = 110°C
50
A
IF110
TC = 110°C
48
A
ICM
TC = 25°C, 1 ms
SSOA
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
(RBSOA)
Clamped inductive load @ VCE ≤ 600 V
PC
TC = 25°C
300
A
ICM = 100
A
480
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
Mounting torque, TO-264
Weight
TO-264
PLUS247
1.13/10 Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
IC
ICES
VCE = VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC = 40 A, VGE = 15 V
Note 1
© 2004 IXYS All rights reserved
g
g
300
°C
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
= 250 µA, VCE = VGE
VGE(th)
10
6
3.0
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
2.1
1.8
5.0
V
650
5
µA
mA
±100
nA
2.5
V
V
TO-264 AA
(IXGK)
G
(TAB)
C
E
PLUS247
(IXGX)
G
G = Gate
E = Emitter
C
(TAB)
E
C = Collector
Tab = Collector
Features
• Very high frequency IGBT and
anti-parallel FRED in one package
• Square RBSOA
• High current handling capability
• MOS Gate turn-on for drive simplicity
• Fast Recovery Epitaxial Diode (FRED)
with soft recovery and low IRM
Applications
• Switch-mode and resonant-mode
power supplies
• Uninterruptible power supplies (UPS)
• DC choppers
• AC motor speed control
• DC servo and robot drives
Advantages
• Space savings (two devices in one
package)
• Easy to mount with 1 screw
DS99148A(05/04)
IXGK 50N60C2D1
IXGX 50N60C2D1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
51
S
3700
290
pF
pF
Cres
50
pF
Qg
Qge
138
25
nC
nC
40
nC
gfs
Cies
Coes
IC = 40 A; VCE = 10 V,
Note 1
40
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = 40 A, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
tri
td(off)
Dim.
Inductive load, TJ = 25°°C
IC = 40 A, VGE = 15 V
18
ns
25
ns
115 150
VCE = 480 V, RG = Roff = 2.0 Ω
ns
48
ns
Eoff
0.38
0.7 mJ
td(on)
tri
Eon
td(off)
tfi
Eoff
18
25
1.4
170
60
0.74
ns
ns
mJ
ns
ns
mJ
0.15
0.31 K/W
K/W
tfi
Inductive load, TJ = 125°°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 2.0 Ω
RthJC
RthCK
Reverse Diode (FRED)
Millimeter
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91
26.16
19.81
19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32
20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Min.
Inches
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
PLUS247 Outline
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
VF
IF = 60 A, VGE = 0 V,
Note 1
IRM
IF = 60 A, VGE = 0 V, -diF/dt = 100 A/µ TJ = 100°C
VR = 100 V
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V
t rr
TO-264 AA Outline
TJ = 150°C
RthJC
35
2.1
1.4
V
8.3
A
ns
0.65 K/W
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Terminals:
Dim.
A
A1
A2
b
b1
b2
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343 6,583,505
IXGK 50N60C2D1
IXGX 50N60C2D1
Fig. 1. Output Characte ristics
@ 25 Deg. C
80
VGE = 15V
13V
11V
70
320
9V
VGE = 15V
13V
280
60
50
40
6V
30
20
200
9V
160
120
7V
80
10
40
5V
0
5V
0
0.5
1
1.5
2
2.5
3
3.5
4
0
1
2
3
V C E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
VGE = 15V
13V
11V
70
4
5
6
V C E - Volts
7
8
9
10
Fig. 4. De pende nce of V CE(sat) on
Tem perature
1.2
9V
60
50
40
V GE = 15V
1.1
7V
VC E ( s a t )- Normalized
80
I C - Amperes
11V
240
7V
I C - Amperes
I C - Amperes
Fig. 2. Extended Output Characte ristics
@ 25 de g. C
6V
30
20
1.0
I C = 80A
0.9
I C = 40A
0.8
0.7
0.6
10
I C = 20A
5V
0
0.5
0.5
1
1.5
2
2.5
3
3.5
4
25
50
V CE - Volts
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Em itter voltage
Fig. 6. Input Adm ittance
200
4.8
TJ = 25ºC
4.5
180
160
I C = 80A
40A
20A
3.9
3.6
I C - Amperes
VC E - Volts
4.2
3.3
140
120
100
80
60
3
TJ = 125ºC
25ºC
40
2.7
20
0
2.4
5
6
7
8
9
10 11 12
V G E - Volts
© 2004 IXYS All rights reserved
13 14 15 16 17
4
4.5
5
5.5
6
6.5
7
V G E - Volts
7.5
8
8.5
9
IXGK 50N60C2D1
IXGX 50N60C2D1
Fig. 8. Dependence of Turn-Off
Energy on RG
Fig. 7. Transconductance
70
3
2.4
50
E o f f - milliJoules
g f s - Siemens
TJ = 125ºC
VGE = 15V
VCE = 480V
2.7
TJ = 25ºC
125ºC
60
40
30
20
I C = 80A
2.1
1.8
1.5
1.2
I C = 40A
0.9
0.6
10
0.3
0
I C = 20A
0
0
20
40
60
80
2
100 120 140 160 180 200
4
6
8
I C - Amperes
Fig. 9. Dependence of Turn-Off
Energy on Ic
1.8
1.4
1.2
TJ = 125ºC
1
16
18
R G = 2Ω
R G = 10Ω - - - VGE = 15V
VCE = 480V
2.1
E o f f - milliJoules
E o f f - MilliJoules
1.6
14
2.4
R G = 2Ω
R G = 10Ω - - - VGE = 15V
VCE = 480V
1.8
12
Fig. 10. Dependence of Turn-Off
Energy on Tem perature
2.2
2
10
R G - Ohms
0.8
0.6
TJ = 25ºC
I C = 80A
1.5
1.2
0.9
I C = 40A
0.6
0.4
0.3
0.2
I C = 20A
0
0
20
30
40
50
60
70
25
80
35
45
I C - Amperes
Fig. 11. Dependence of Turn-Off
Sw itching Tim e on RG
65
75
85
95
105 115 125
Fig. 12. Dependence of Turn-Off
Sw itching Tim e on Ic
200
450
td(off)
tfi - - - - - -
400
Switching Time - nanoseconds
Switching Time - nanoseconds
55
TJ - Degrees Centigrade
TJ = 125ºC
VGE = 15V
VCE = 480V
350
300
250
200
I C = 20A
I C = 40A
I C = 80A
150
100
50
td(off)
tfi - - - - - -
180
R G = 2Ω
VGE = 15V
VCE = 480V
160
140
TJ = 125ºC
120
100
TJ = 25ºC
80
60
40
2
4
6
8
10
12
14
16
18
R G - Ohms
IXYS reserves the right to change limits, test conditions, and dimensions.
20
30
40
50
I C - Amperes
60
70
80
IXGK 50N60C2D1
IXGX 50N60C2D1
Fig. 13. Dependence of Turn-Off
Sw itching Tim e on Tem perature
Fig. 14. Reverse-Bias
Safe Operating Area
110
td(off)
tfi - - - - - -
180
100
I C = 20A
R G = 2Ω
VGE = 15V
VCE = 480V
160
140
90
80
120
I C - Amperes
Switching Time - nanoseconds
200
I C = 80A
100
80
I C = 40A
60
70
60
50
40
TJ = 125º C
30
R G = 10Ω
dV/dT < 10V/ns
20
40
I C = 20A
10
20
0
25
35
45
55
65
75
85
95
TJ - Degrees Centigrade
105 115 125
100
200
V
400
CE
500
600
- Volts
Fig. 16. Capacitance
Fig. 15. Gate Charge
16
10000
VCE = 300V
I C = 40A
I G = 10mA
12
f = 1 MHz
Capacitance - picoFarrads
14
VG E - Volts
300
10
8
6
4
C ies
1000
C oes
100
2
C res
0
10
0
30
60
90
120
150
0
5
10
Q G - nanoCoulombs
15
20
25
V C E - Volts
30
35
40
Fig. 16. Maxim um Transient The rm al Resistance
0.35
R ( t h ) J C - ºC / W
0.30
0.25
0.20
0.15
0.10
0.05
0.00
1
© 2004 IXYS All rights reserved
10
Pulse Width - milliseconds
100
1000
IXGK 50N60C2D1
IXGX 50N60C2D1
160
A
140
IF
4000
nC
120
3000
TVJ= 25°C
100
TVJ=100°C
2000
TVJ= 100°C
VR = 300V
A
60
IF=120A
IF= 60A
IF= 30A
Qr
80
80
TVJ= 100°C
VR = 300V
IRM
IF=120A
IF= 60A
IF= 30A
40
TVJ=150°C
60
40
1000
20
20
0
0
1
2
0
100
V
A/µs 1000
-diF/dt
VF
Fig. 17. Forward current IF versus VF
Fig. 18. Reverse recovery charge Qr
versus -diF/dt
140
2.0
TVJ= 100°C
VR = 300V
ns
130
trr
1.5
Kf
120
IF=120A
IF= 60A
IF= 30A
110
1.0
IRM
0
0
200
400
600 A/µs
800 1000
-diF/dt
Fig. 19. Peak reverse current IRM
versus -diF/dt
20
1.6
V
VFR
15
µs
1.2
tfr
tfr
VFR
10
0.8
5
0.4
100
0.5
0.0
Qr
0
40
90
80
120 °C 160
80
0
200
400
600
TVJ
800 1000
A/µs
0
0
200
400
-diF/dt
Fig. 20. Dynamic parameters Qr, IRM
versus TVJ
Fig. 21. Recovery time trr versus -diF/dt
1
0.0
600 A/µs
800 1000
diF/dt
Fig. 22. Peak forward voltage VFR and
tfr versus diF/dt
Constants for ZthJC calculation:
K/W
i
0.1
ZthJC
1
2
3
0.01
Rthi (K/W)
ti (s)
0.324
0.125
0.201
0.0052
0.0003
0.0385
Note: Fig. 2 through Fig. 6 show typical
values
0.001
0.0001
0.00001
TVJ= 100°C
IF = 60A
DSEP 60-06A
0.0001
0.001
0.01
0.1
Fig. 23. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
s
t
1