ETC 2C3637KV

Data Sheet No. CP3637
2N3636, 2N3636L
2N3637, 2N3637L
Chip Type 2C3637KV
Geometry 0820
Polarity PNP
REF: MIL-PRF-19500L/357
27 MILS
B
E
27 MILS
Chip type 2C3637KV by Semicoa
Semiconductors meets the standards
for MIL-PRF-19500L Appendix G,
Class K and provides performance
similar to these devices.
Product Summary
APPLICATIONS: Designed for general purpose switching and amplifier
applications.
Features:
• High voltage ratings
RADIATION: Consult factory for
availability of Radiation Data for this
device.
Part Number
2N3636, 2N3636L, 2N3637, 2N3637L
•
Low saturation voltages
•
Low capacitance
•
Medium current capabilities
M e c h a n ical S p e c ific a tio n s
M etallization
Bonding Pad Size
D ie Thickness
Chip Area
Top Surface
Top
B a c k s ide
E m itte r
Base
A l - 20 kÅ
Au - 6.5 KÅ nom.
4 . 0 m ils x 5 . 0 m i l s
4 . 5 m ils x 4 . 5 m i l s
8 m ils n o m inal
2 7 m ils x 27 m ils
S ilox Passivated
Electrical Characteristics
TA = 25oC (Group A2, A3)
Parameter
Test conditions
Min
Max
Unit
ICBO1
Bias condition D; VCB = 175 V dc
---
10
µA dc
IEBO1
VEB = 5 V dc
---
10
µA dc
Bias condition D; IC = 10 mA dc; pulsed
175
---
V dc
ICBO2
Bias condition D; VCB = 100 V dc
---
100
nA dc
IEBO2
Bias condition D; VEB = 3 V dc
---
50
nA dc
ICEO
Bias condition D; VCE = 100 V dc
---
10
µA dc
hFE1
VCE = 10 V dc; IC = 0.1 mA dc; pulsed
55
---
---
hFE2
VCE = 10 V dc; IC = 1.0 mA dc; pulsed
90
---
---
hFE3
VCE = 10 V dc; IC = 10 mA dc; pulsed
100
---
---
hFE4
VCE = 10 V dc; IC = 50 mA dc; pulsed
100
300
---
hFE5
VCE = 10 V dc; IC = 150 mA dc; pulsed
60
---
---
VCE(sat)1
IC = 10 mA dc; IB = 1 mA dc; pulsed
---
0.3
V dc
VCE(sat)2
IC = 50 mA dc; IB = 5 mA dc; pulsed
---
0.6
V dc
---
0.8
V dc
0.65
0.90
V dc
V(BR)CEO
VBE(sat)1
Test condition A; IC = 10 mA dc; IB = 1.0 mA
dc; pulsed
VBE(sat)2
Test condition A; IC = 50 mA dc; IB = 5 mA dc;
pulsed
ICBO3
Bias condition D; VCB = -100 V dc
---
100
µA dc
hFE6
VCE = 10 V dc; IC = 50 mA dc
50
---
---
Due to the limitations of probe testing, only dc parameters are tested. This must be done with
pulse width less than 300 µs, duty cycle less than 2%.
FLOWCHART
MIL-PRF-19500L
APPENDIX G
TABLE XII. Die element evaluation requirements
MIL-STD-750
Subgroup
1
2
3a
Class K
Test
x
x
x
3b
4
x
x
Electrical Test
Visual Inspection
Internal / Die Inspection
Sample Assembly
Stabilization
x
x
x
x
x
x
x
x
x
Method
Condition
Temperature cycling
Mechanical Shock
or
Constant Acceleration
Electrical Test
(Read/Record)
HTRB
Electrical Test
(Read/Record)
Burn-in
Electrical Test
(Read/Record)
Steady state life
Transistors
Electrical Test
(Read/Record)
Wire Bond Evaluation
1051
2016
C
t = 24 hours min
C
Y1 direction
2006
Y1 direction
Reference
Paragraph
(accept no.)
100 percent
100 percent
10(0)
2072
2072
1032
Quantity
G.5.2.1
G.5.2.2
G.5.2.3.1
10 pieces min. G.5.2.3.2
10(0)
G.5.2.4.1
Group A,
Subgroups 2,3
Screen 10
Group A,
Subgroup 2
Screen 12
Group A,
Subgroup 2
1/
2/
1/
2/
3/
1039
5a
x
2037
5b
x
Die Shear Evaluation
2017
6
x
SEM
2077
B
Group A,
Subgroups 2, 3
Condition A
2/
10(0) wires
G.5.2.5.1
or 20(1) wires
5(0)
G.5.2.5.2
or 10(1)
see test
method
2077
G.5.2.6
4/
1/ HTRB and burn-in shall be performed when specified on the applicable performance specification sheet.
2/ Thermal Impedance shall not apply.
3/ Time and temperature requirements in accordance with table XI.
4/ May be performed at any time.