Data Sheet No. CP3637 2N3636, 2N3636L 2N3637, 2N3637L Chip Type 2C3637KV Geometry 0820 Polarity PNP REF: MIL-PRF-19500L/357 27 MILS B E 27 MILS Chip type 2C3637KV by Semicoa Semiconductors meets the standards for MIL-PRF-19500L Appendix G, Class K and provides performance similar to these devices. Product Summary APPLICATIONS: Designed for general purpose switching and amplifier applications. Features: • High voltage ratings RADIATION: Consult factory for availability of Radiation Data for this device. Part Number 2N3636, 2N3636L, 2N3637, 2N3637L • Low saturation voltages • Low capacitance • Medium current capabilities M e c h a n ical S p e c ific a tio n s M etallization Bonding Pad Size D ie Thickness Chip Area Top Surface Top B a c k s ide E m itte r Base A l - 20 kÅ Au - 6.5 KÅ nom. 4 . 0 m ils x 5 . 0 m i l s 4 . 5 m ils x 4 . 5 m i l s 8 m ils n o m inal 2 7 m ils x 27 m ils S ilox Passivated Electrical Characteristics TA = 25oC (Group A2, A3) Parameter Test conditions Min Max Unit ICBO1 Bias condition D; VCB = 175 V dc --- 10 µA dc IEBO1 VEB = 5 V dc --- 10 µA dc Bias condition D; IC = 10 mA dc; pulsed 175 --- V dc ICBO2 Bias condition D; VCB = 100 V dc --- 100 nA dc IEBO2 Bias condition D; VEB = 3 V dc --- 50 nA dc ICEO Bias condition D; VCE = 100 V dc --- 10 µA dc hFE1 VCE = 10 V dc; IC = 0.1 mA dc; pulsed 55 --- --- hFE2 VCE = 10 V dc; IC = 1.0 mA dc; pulsed 90 --- --- hFE3 VCE = 10 V dc; IC = 10 mA dc; pulsed 100 --- --- hFE4 VCE = 10 V dc; IC = 50 mA dc; pulsed 100 300 --- hFE5 VCE = 10 V dc; IC = 150 mA dc; pulsed 60 --- --- VCE(sat)1 IC = 10 mA dc; IB = 1 mA dc; pulsed --- 0.3 V dc VCE(sat)2 IC = 50 mA dc; IB = 5 mA dc; pulsed --- 0.6 V dc --- 0.8 V dc 0.65 0.90 V dc V(BR)CEO VBE(sat)1 Test condition A; IC = 10 mA dc; IB = 1.0 mA dc; pulsed VBE(sat)2 Test condition A; IC = 50 mA dc; IB = 5 mA dc; pulsed ICBO3 Bias condition D; VCB = -100 V dc --- 100 µA dc hFE6 VCE = 10 V dc; IC = 50 mA dc 50 --- --- Due to the limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 µs, duty cycle less than 2%. FLOWCHART MIL-PRF-19500L APPENDIX G TABLE XII. Die element evaluation requirements MIL-STD-750 Subgroup 1 2 3a Class K Test x x x 3b 4 x x Electrical Test Visual Inspection Internal / Die Inspection Sample Assembly Stabilization x x x x x x x x x Method Condition Temperature cycling Mechanical Shock or Constant Acceleration Electrical Test (Read/Record) HTRB Electrical Test (Read/Record) Burn-in Electrical Test (Read/Record) Steady state life Transistors Electrical Test (Read/Record) Wire Bond Evaluation 1051 2016 C t = 24 hours min C Y1 direction 2006 Y1 direction Reference Paragraph (accept no.) 100 percent 100 percent 10(0) 2072 2072 1032 Quantity G.5.2.1 G.5.2.2 G.5.2.3.1 10 pieces min. G.5.2.3.2 10(0) G.5.2.4.1 Group A, Subgroups 2,3 Screen 10 Group A, Subgroup 2 Screen 12 Group A, Subgroup 2 1/ 2/ 1/ 2/ 3/ 1039 5a x 2037 5b x Die Shear Evaluation 2017 6 x SEM 2077 B Group A, Subgroups 2, 3 Condition A 2/ 10(0) wires G.5.2.5.1 or 20(1) wires 5(0) G.5.2.5.2 or 10(1) see test method 2077 G.5.2.6 4/ 1/ HTRB and burn-in shall be performed when specified on the applicable performance specification sheet. 2/ Thermal Impedance shall not apply. 3/ Time and temperature requirements in accordance with table XI. 4/ May be performed at any time.