DIGITRON SEMICONDUCTORS Rectifier Diodes All parts are screened per MIL-PRF-19500, JANTX Level and the device detail specification. All testing is performed at room temperature, unless indicated otherwise. For testing at high and low temperatures, Group A testing is required. Test Method Conditions / Notes 1 Temperature Cycling MIL-STD-750 Method 1051 2 Surge Test MIL-STD-750 Method 4066 Test condition C or maximum storage temperature, whichever less. 20 cycles, 10 minutes per extreme. Rated IFSM as specified in the detail drawing. 3 Thermal Impedance MIL-STD-750 Method 3101 As specified in the detail drawing. 4 High Temperature Reverse Bias Burn-in (HTRB) Interim Electrical Testing MIL-STD-750 Method 1038 Condition A. 80% of rated VR for 48 hours at 150°C. 6 Power Burn-in MIL-STD-750 Method 1038 7 Final Electrical Testing DC parameters per device detail specification. 8 Delta Calculation Delta parameters and limits per device detail specification. 9 PDA Calculation 10 percent defective allowed. 5 10 Seal Test Gross Leak DC parameters per device detail specification. MIL-STD-750 Method 1071 96 hours of forward bias per device detail specification. Condition C Notes: 1. Testing varies in accordance with the device detail specification. 2. Specific customer testing needs may be accommodated into any testing flow (selection tests, temperature requirements, special tests). 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com