Data Sheet No. CP2222A 2N2219A 2N2222A Chip Type 2C2222AKV Geometry 0400 Polarity NPN REF: MIL-PRF-19500L/255 20 MILS E B 20 MILS Chip type 2C2222AKV by Semicoa Semiconductors meets the standards for MIL-PRF-19500L Appendix G, Class K and provides performance similar to these devices. Product Summary Part Number 2N2222A, 2N2222, 2N2219, 2N2219A, 2N2219AL 2N2N2222AUB, SD2222A, SD2222AF, SQ2222A, APPLICATIONS: Designed for general purpose switching and amplifier applications. RADIATION: Consult factory for availability of Radiation Data for this device. SQ2222AF, 2N5582, 2N6989, 2N6990 Features: • Low VCE(sat) voltages • High current-gain-bandwidth product M e c h a n ical Specifications M etallization Bonding Pad Size D ie Thickness Chip Area Top Surface Top A l - 24 kÅ Backside Au - 6.5 kÅ E m itter 4.0 mils x 4.0 mils Base 4.0 mils x 4.0 mils 8 m ils nominal 20 mils x 20 mils S ilox Passivated Electrical Characteristics TA = 25oC (Group A2, A3) Parameter Test conditions Min Max Unit ICBO1 VCB = 75 V dc --- 10 µA dc IEBO1 VEB = 6 V dc --- 10 µA dc Bias condition D; IC = 10 mA dc; pulsed 50 --- V dc ICES Bias condition C; VCE = 50 V dc --- 50 nA dc ICBO2 Bias condition D; VCB = 60 V dc --- 10 nA dc IEBO2 Bias condition D; VEB = 4 V dc --- 10 nA dc hFE1 VCE = 10 V dc; IC = 0.1 mA dc 50 --- --- hFE2 VCE = 10 V dc; IC = 1.0 mA dc 75 325 --- hFE3 VCE = 10 V dc; IC = 10 mA dc 100 --- --- hFE4 VCE = 10 V dc; IC = 150 mA dc; pulsed 100 300 --- hFE5 VCE = 10 V dc; IC = 500 mA dc; pulsed 30 --- --- VCE(sat)1 IC = 150 mA dc; IB = 15 mA dc; pulsed --- 0.3 V dc VCE(sat)2 IC = 500 mA dc; IB = 50 mA dc; pulsed --- 1.0 V dc 0.6 1.2 V dc --- 2.0 V dc V(BR)CEO VBE(sat)1 Test condition A; IC = 150 mA dc; IB = 15 mA dc; pulsed VBE(sat)2 Test condition A; IC = 500 mA dc; IB = 50 mA dc; pulsed ICBO3 Bias condition D; VCB = 60 V dc --- 10 µA dc hFE6 VCE = 10 V dc; IC = mA dc 35 --- --- Due to the limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 µs, duty cycle less than 2%. FLOWCHART MIL-PRF-19500L APPENDIX G TABLE XII. Die element evaluation requirements MIL-STD-750 Subgroup 1 2 3a Class K Test x x x 3b 4 x x Electrical Test Visual Inspection Internal / Die Inspection Sample Assembly Stabilization x x x x x x x x x Method Condition Temperature cycling Mechanical Shock or Constant Acceleration Electrical Test (Read/Record) HTRB Electrical Test (Read/Record) Burn-in Electrical Test (Read/Record) Steady state life Transistors Electrical Test (Read/Record) Wire Bond Evaluation 1051 2016 C t = 24 hours min C Y1 direction 2006 Y1 direction Reference Paragraph (accept no.) 100 percent 100 percent 10(0) 2072 2072 1032 Quantity G.5.2.1 G.5.2.2 G.5.2.3.1 10 pieces min. G.5.2.3.2 10(0) G.5.2.4.1 Group A, Subgroups 2,3 Screen 10 Group A, Subgroup 2 Screen 12 Group A, Subgroup 2 1/ 2/ 1/ 2/ 3/ 1039 5a x 2037 5b x Die Shear Evaluation 2017 6 x SEM 2077 B Group A, Subgroups 2, 3 Condition A 2/ 10(0) wires G.5.2.5.1 or 20(1) wires 5(0) G.5.2.5.2 or 10(1) see test method 2077 G.5.2.6 4/ 1/ HTRB and burn-in shall be performed when specified on the applicable performance specification sheet. 2/ Thermal Impedance shall not apply. 3/ Time and temperature requirements in accordance with table XI. 4/ May be performed at any time.