Transistor 2SD0874, 2SD0874A (2SD874, 2SD874A) Silicon NPN epitaxial planer type For low-frequency power amplification Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A) Unit: mm ■ Features Parameter 2SD0874 base voltage 2SD0874A Collector to 2SD0874 Ratings Emitter to base voltage VEBO Peak collector current ICP 1.5 A Collector current IC 1 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1:Base 2:Collector 3:Emitter Symbol Conditions min ICBO VCB = 20V, IE = 0 VCBO IC = 10µA, IE = 0 VCEO IC = 2mA, IB = 0 VEBO IE = 10µA, IC = 0 5 hFE1*1 VCE = 10V, IC = 500mA*2 85 hFE2 VCE = 5V, IC = 1A*2 50 VCE(sat) Base to emitter saturation voltage VBE(sat) IC = 500mA, IB = Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 2SD0874A Collector to emitter 2SD0874 voltage 2SD0874A Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage *1h FE1 typ max Unit 0.1 µA 30 V 60 25 V 50 V 160 340 IC = 500mA, IB = 50mA*2 0.2 0.4 50mA*2 0.85 1.2 Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 2SD0874 ZQ ZR ZS 2SD0874A YQ YR YS V V MHz 200 20 *2 Rank classification Marking Symbol 2.5±0.1 (Ta=25˚C) Parameter 2SD0874 +0.25 EIAJ:SC–62 Mini Power Type Package Marking symbol : Z(2SD0874) Y(2SD0874A) Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion voltage 1 marking V Collector to base 2 V 50 5 Collector cutoff current 0.4±0.04 3.0±0.15 3 25 ■ Electrical Characteristics 0.4max. 0.5±0.08 1.5±0.1 V 60 VCEO 0.4±0.08 Unit 30 VCBO emitter voltage 2SD0874A * (Ta=25˚C) Symbol Collector to 45° 4.0–0.20 ■ Absolute Maximum Ratings 1.5±0.1 4.5±0.1 1.6±0.2 +0.1 ● Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.0–0.2 ● 2.6±0.1 ● pF Pulse measurement Note.) The Part numbers in the Parenthesis show conventional part number. 1 2SD0874, 2SD0874A Transistor Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.2 1.0 0.8 0.6 0.4 1.25 IB=10mA 9mA 8mA 7mA 1.00 6mA 5mA 0.75 4mA 3mA 0.50 2mA 0.25 0.2 0 1mA 0 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 10 3 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 1 3 400 300 Ta=75˚C 200 25˚C –25˚C 100 0.3 1 3 10 25˚C 0.1 –25˚C 0.03 0.01 0.003 0.001 0.01 0.03 IE=0 f=1MHz Ta=25˚C 40 30 20 Single pulse TC=25˚C 3 ICP 1 IC t=1s 0.3 DC 0.1 2SD0874 10 0.03 0 30 100 Collector to base voltage VCB (V) 0.01 0.1 0.3 1 3 0.1 0.3 1 3 10 Collector current IC (A) 10 30 VCB=10V Ta=25˚C 160 120 80 40 0 –1 –3 –10 –30 Emitter current IE (mA) Area of safe operation (ASO) 10 Collector current IC (A) Collector output capacitance Cob (pF) 0.1 Collector current IC (A) Cob — VCB 10 Ta=75˚C 0.3 fT — IE 500 0 0.01 0.03 10 50 3 1 200 Collector current IC (A) 1 3 VCE=10 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.3 10 600 IC/IB=10 0.1 8 IC/IB=10 hFE — IC 100 0.01 0.01 0.03 6 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 1 4 Transition frequency fT (MHz) 20 2SD0874A 0 2 VCE(sat) — IC Ta=25˚C Collector current IC (A) Collector power dissipation PC (W) IC — VCE 1.50 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.4 100 Collector to emitter voltage VCE (V) –100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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