Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9±0.1 1.0 4.5±0.1 7 0. 0.85 4.1±0.2 ● Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 1.5 ■ Absolute Maximum Ratings * (Ta=25˚C) 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 7 V Peak collector current ICP 8 A Collector current IC 5 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics 2 2.5 1cm2 0.45±0.05 1:Base 2:Collector 3:Emitter 1 1.25±0.05 0.55±0.1 2.5 EIAJ:SC–71 M Type Mold Package or more, and the board (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0 0.1 µA Emitter cutoff current IEBO VEB = 7V, IC = 0 0.1 µA Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V hFE1 Forward current transfer ratio *1 VCE = 2V, IC = 0.5A*2 hFE2 VCE = 2V, IC = 2A*2 Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.1A*2 Transition frequency fT VCB = 6V, IE = –50mA, f = 200MHz Collector output capacitance Cob VCB = 20V, IE = 0, f = 1MHz 230 600 150 1 150 50 *2 *1h FE1 V MHz pF Pulse measurement Rank classification Rank Q R hFE1 230 ~ 380 340 ~ 600 1 2SD1244 Transistor PC — Ta IC — VCE 1.0 0.8 0.6 0.4 6 IB=7mA 2.0 0.2 6mA 5mA 4mA 1.2 3mA 0.8 2mA 60 80 100 120 140 160 Ambient temperature Ta (˚C) 0.4 3 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.003 0.1 0.3 1 0.8 1.2 1.6 2.0 2.4 0 3 30 10 3 25˚C Ta=–25˚C 1 75˚C 0.3 0.1 0.03 0.01 0.01 0.03 10 0.1 0.3 fT — IE 1 3 250 200 150 100 50 –3 Emitter current IE (A) Ta=75˚C 300 –10 25˚C –25˚C 200 100 0.1 0.3 1 3 10 Area of safe operation (ASO) IE=0 f=1MHz Ta=25˚C 80 60 40 Single pulse Ta=25˚C 30 10 3 ICP IC t=10ms t=1s 1 0.3 0.1 20 0.03 0 –1 400 100 Collector current IC (A) Collector output capacitance Cob (pF) 300 2.0 Collector current IC (A) Cob — VCB 350 1.6 500 0 0.01 0.03 10 100 VCB=6V Ta=25˚C 1.2 VCE=2V Collector current IC (A) 400 0.8 600 IC/IB=30 Collector current IC (A) 0 – 0.01 – 0.03 – 0.1 – 0.3 0.4 Base to emitter voltage VBE (V) hFE — IC 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) IC/IB=30 0.001 0.01 0.03 2 VBE(sat) — IC 10 0.1 3 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.3 4 0 0 Forward current transfer ratio hFE 40 –25˚C 1 1mA 0 20 25˚C Ta=75˚C 5 1.6 0.4 0 Transition frequency fT (MHz) VCE=2V Ta=25˚C Collector current IC (A) Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 0 2 IC — VBE 2.4 Collector current IC (A) Collector power dissipation PC (W) 1.2 1 3 10 30 100 Collector to base voltage VCB (V) 0.01 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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