Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM Ptot VCEsat VCEsat ICsat tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector-emitter saturation voltage Collector saturation current Fall time VBE = 0 V PINNING - SOT93 PIN TYP. MAX. UNIT 4.5 0.4 1500 700 8 15 125 1.0 5.0 0.6 V V A A W V V A µs Tmb ≤ 25 ˚C IC = 4.5 A; IB = 1.29 A IC = 4.5 A; IB = 1.1 A ICM = 4.5 A; IB(end) = 1.1 A PIN CONFIGURATION SYMBOL DESCRIPTION c tab 1 base 2 collector 3 emitter tab collector b 1 2 e 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature VBE = 0 V average over any 20 ms period Tmb ≤ 25 ˚C MIN. MAX. UNIT -65 - 1500 700 8 15 4 6 100 5 125 150 150 V V A A A A mA A W ˚C ˚C TYP. MAX. UNIT - 1.0 K/W 45 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-mb Junction to mounting base - Rth j-a Junction to ambient in free air 1 Turn-off current. November 1995 1 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508A STATIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL ICES ICES PARAMETER Collector cut-off current IEBO BVEBO VCEOsust VCEsat VCEsat VBEsat hFE hFE CONDITIONS 2 VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C Emitter cut-off current VEB = 7.5 V; IC = 0 A Emitter-base breakdown voltage IB = 1 mA Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; L = 25 mH Collector-emitter saturation voltages IC = 4.5 A; IB = 1.1 A IC = 4.5 A; IB = 1.29 A Base-emitter saturation voltage IC = 4.5 A; IB = 1.7 A DC current gain IC = 100 mA; VCE = 5 V IC = 4.5 A; VCE = 1 V MIN. TYP. MAX. UNIT - - 1.0 2.0 mA mA 7.5 700 13.5 - 1.0 - mA V V 6 4 13 5.5 5.0 1.0 1.3 26 7.5 V V V TYP. MAX. UNIT 80 - pF 5.0 0.4 6.0 0.6 µs µs 4.7 0.25 5.7 0.35 µs µs DYNAMIC CHARACTERISTICS Tmb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Cc Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz ts tf Switching times (16 kHz line deflection circuit) Turn-off storage time Turn-off fall time ICM = 4.5 A; IB(end) = 1.1 A; LB = 6 µH; -VBB = 4 V; (-dIB/dt = 0.6 A/µs) ts tf Switching times (38 kHz line deflection circuit) Turn-off storage time Turn-off fall time ICM = 4.0 A; IB(end) = 0.9 A; LB = 6 µH; -VBB = 4 V; (-dIB/dt = 0.6 A/µs) IC / mA + 50v 100-200R 250 Horizontal 200 Oscilloscope 100 Vertical 100R 1R 0 6V VCE / V 30-60 Hz min VCEOsust Fig.1. Test circuit for VCEOsust. Fig.2. Oscilloscope display for VCEOsust. 2 Measured with half sine-wave voltage (curve tracer). November 1995 2 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor ICM BU2508A IC BU2508A 100 h FE DIODE t 5V IBend IB 10 t 20us 1V 26us Tj = 25 C 64us Tj = 125 C VCE 1 0.01 0.1 10 1 IC / A t Fig.3. Switching times waveforms. Fig.6. Typical DC current gain. hFE = f (IC) parameter VCE ICM 1.2 90 % VBESAT / V Tj = 25 C 1.1 IC BU2508A Tj = 125 C 1 0.9 10 % 0.8 tf t ts 0.7 IBend 0.6 IC/IB= 3 4 5 IB 0.5 t 0.4 0.1 1 IC / A - IBM Fig.4. Switching times definitions. Fig.7. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB + 150 v nominal adjust for ICM 1 VCESAT / V 0.8 1mH 0.7 5 4 0.6 3 0.5 Tj = 25 C 0.4 LB BU2508A 12nF Tj = 125 C 0.3 BY228 0.2 0.1 -VBB 0 Fig.5. Switching times test circuit (BU2508A). November 1995 BU2508A IC/IB= 0.9 IBend 10 0.1 1 IC / A 10 Fig.8. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB 3 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor VBESAT / V 1.2 BU2508A BU2508A 12 11 10 9 8 7 6 5 4 3 2 1 0 Tj = 25 C 1.1 Tj = 125 C 1 0.9 IC= 6A 4.5A 3A 2A 0.8 0.7 0.6 0 1 2 IB / A 3 4 VCESAT / V BU2508A ts IC = 4.5A 3.5A tf 0.1 1 IB / A 10 Fig.12. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz Fig.9. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC 10 ts, tf / us BU2508A Zth / (K/W) 10 Tj = 25 C Tj = 125 C 6A 1 4.5A 0.5 1 0.2 0.1 0.05 0.02 D=0 0.1 3A IC=2A PD tp D= t T 0.1 0.1 1 IB / A 0.01 1E-06 10 Eoff / uJ 1E-02 1E+00 t/s Fig.10. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC 1000 1E-04 tp T Fig.13. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T BU2508A 120 Normalised Power Derating PD% 110 100 90 IC = 4.5A 3.5A 80 70 60 50 100 40 30 20 10 10 0.1 1 IB / A 0 10 0 40 60 80 100 Tmb / C 120 140 Fig.14. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Tmb) Fig.11. Typical turn-off losses. Tj = 85˚C Eoff = f (IB); parameter IC; f = 16 kHz November 1995 20 4 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor 100 BU2508A IC / A = 0.01 ICM max tp = IC max 10 (1) II 5 us 10 20 I 50 1 100 200 500 (2) 0.1 1 ms 2 5 10 20 DC 0.01 1 10 1000 100 VCE / V Fig.15. Forward bias safe operating area. Tmb = 25˚C (1) Ptot max line. (2) Second-breakdown limits (independent of temperature). I Region of DC operation. II Extension for repetitive pulse operation. November 1995 5 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508A MECHANICAL DATA Dimensions in mm 15.2 max 14 Net Mass: 5 g 4.6 max 13.6 2 max 4.25 4.15 2 4.4 21 max 12.7 max 2.2 max 0.5 min dimensions within this zone are uncontrolled 1 2 5.5 13.6 min 3 1.15 0.95 0.5 M 0.4 1.6 11 Fig.16. SOT93; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT93 envelope. 2. Epoxy meets UL94 V0 at 1/8". November 1995 6 Rev 1.300 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508A DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1995 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. November 1995 7 Rev 1.300