PHILIPS BU2520D

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520D
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
VBE = 0 V
6
0.35
1500
800
10
25
125
5.0
2.2
0.5
V
V
A
A
W
V
A
V
µs
PINNING - SOT93
PIN
Tmb ≤ 25 ˚C
IC = 6.0 A; IB = 1.2 A
IF = 6.0 A
ICM = 6.0 A; IB(end) = 1.0 A
PIN CONFIGURATION
SYMBOL
DESCRIPTION
c
tab
1
base
2
collector
3
emitter
tab
collector
b
Rbe
1
2
e
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Tmb ≤ 25 ˚C
MIN.
MAX.
UNIT
-65
-
1500
800
10
25
6
9
150
6
125
150
150
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
MAX.
UNIT
-
1.0
K/W
45
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
Junction to mounting base
-
Rth j-a
Junction to ambient
in free air
1 Turn-off current.
November 1995
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520D
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2
ICES
ICES
Collector cut-off current
IEBO
BVEBO
Rbe
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
VF
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 7.5 V; IC = 0 A
IB = 600 mA
VEB = 7.5 V
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 6.0 A; IB = 1.2 A
IC = 6.0 A; IB = 1.2 A
IC = 1.0 A; VCE = 5 V
IC = 6 A; VCE = 5 V
IF = 6 A
MIN.
TYP.
MAX.
UNIT
-
-
1.0
2.0
mA
mA
100
7.5
800
13.5
50
-
300
-
mA
V
Ω
V
5
-
7
-
5.0
1.3
23
10
2.2
V
V
V
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
115
-
pF
Switching times (16 kHz line
deflection circuit)
ICM = 6.0 A; LC = 650 µH; Cfb = 19 nF;
IB(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V;
(-dIB/dt = 0.8 A / µs)
4.5
0.35
5.5
0.5
µs
µs
ts
tf
Turn-off storage time
Turn-off fall time
TRANSISTOR
IC
ICM
ICM
90 %
DIODE
t
IC
IBend
IB
10 %
tf
t
20us
t
ts
26us
IB
IBend
64us
t
VCE
- IBM
t
Fig.1. Switching times waveforms (16 kHz).
Fig.2. Switching times definitions.
2 Measured with half sine-wave voltage (curve tracer).
November 1995
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520D
+ 150 v nominal
adjust for ICM
1.0
VCESAT / V
BU2520D
IC/IB =
0.9
5
0.8
4
0.7
Lc
3
0.6
0.5
Tj = 25 C
0.4
D.U.T.
LB
IBend
Tj = 125 C
0.3
Cfb
0.2
0.1
-VBB
Rbe
0
0.1
1
10
100
IC / A
Fig.3. Switching times test circuit.
100
hFE
Fig.6. Typical collector-emitter saturation voltage.
VCEsat = f (IC); parameter IC/IB
BU2520D
1.2
BU2520D
Tj = 25 C
Tj = 25 C
1.1
Tj = 125 C
5V
VBESAT / V
Tj = 125 C
1.0
0.9
10
IC=
1V
0.8
8A
0.7
6A
5A
4A
0.6
1
1
0.1
100
10
0
1
2
IB / A
IC / A
Fig.4. Typical DC current gain. hFE = f (IC)
parameter VCE
1.2
VBESAT / V
1.1
3
4
Fig.7. Typical base-emitter saturation voltage.
VBEsat = f (IB); parameter IC
BU2520D
10
VCESAT / V
BU2520D
Tj = 25 C
Tj = 25 C
Tj = 125 C
Tj = 125 C
1.0
0.9
8A
0.8
1
6A
IC/IB=
0.7
5A
3
0.6
4
0.5
IC = 4 A
5
0.4
0.1
0.1
1
IC / A
10
0.1
Fig.5. Typical base-emitter saturation voltage.
VBEsat = f (IC); parameter IC/IB
November 1995
1
IB / A
10
Fig.8. Typical collector-emitter saturation voltage.
VCEsat = f (IB); parameter IC
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520D
Eoff / uJ
Zth / (K/W)
10
1000
IC = 6 A
1
0.5
5A
100
0.2
0.1
0.05
0.1
0.02
PD
0.01
D=0
0.001
1E-06
10
0.1
1
IB / A
10
Fig.9. Typical turn-off losses. Tj = 85˚C
Eoff = f (IB); parameter IC; parameter frequency
D=
t
T
1E-04
1E-02
t/s
tp
T
1E+00
Fig.12. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
ts, tf / us
12
11
10
9
8
7
6
5
4
3
2
1
0
tp
IC / A
BU2520A
100
ts
tp =
ICM
= 0.01
30 us
ICDC
IC =
10
6A
5A
100 us
tf
0.1
1
IB / A
10
Ptot
Fig.10. Typical collector storage and fall time.
ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz
1
1 ms
120
Normalised Power Derating
PD%
110
100
90
0.1
80
70
10 ms
60
50
DC
40
30
20
10
0.01
0
0
20
40
60
80
100
Tmb / C
120
1
140
Fig.11. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (Tmb)
November 1995
10
100
1000
VCE / V
Fig.13. Forward bias safe operating area. Tmb = 25 ˚C
ICDC & ICM = f(VCE); ICM single pulse; parameter tp
Second-breakdown limits independant of temperature.
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520D
MECHANICAL DATA
Dimensions in mm
15.2
max
14
Net Mass: 5 g
4.6
max
13.6
2 max
4.25
4.15
2
4.4
21
max
12.7
max
2.2 max
0.5
min
dimensions within
this zone are
uncontrolled
1
2
5.5
13.6
min
3
1.15
0.95
0.5 M
0.4
1.6
11
Fig.14. SOT93; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT93 envelope.
2. Epoxy meets UL94 V0 at 1/8".
November 1995
5
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520D
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1995
6
Rev 1.200