DG2002 New Product Vishay Siliconix Low-Voltage Single SPDT Analog Switch FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D Low Voltage Operation (1.8 V to 5.5 V) Low On-Resistance - rDS(on): 7 W Fast Switching - tON : 8 ns, tOFF: 6 ns Low Charge Injection - QINJ: 5 pC Low Power Consumption TTL/CMOS Compatible 6-Pin SC-70 Package Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems Sample and Hold Circuits DESCRIPTION The DG2002 is a single-pole/double-throw monolithic CMOS analog switch designed for high performance switching of analog signals. Combining low power, high speed (tON: 8 ns, tOFF: 6 ns), low on-resistance (rDS(on): 7 W) and small physical size (SC70), the DG2002 is ideal for portable and battery powered applications requiring high performance and efficient use of board space. The DG2002 is built on Vishay Siliconix’s low voltage JI2 process. An epitaxial layer prevents latchup. Break-before -make is guaranteed for DG2002. Each switch conducts equally well in both directions when on, and blocks up to the power supply level when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE Logic SC-70 IN 1 6 NO (Source1) V+ 2 5 COM GND 3 4 NC (Source2) Top View Device Marking: E2xx Document Number: 71448 S-03501—Rev. A, 16-Apr-01 NC NO 0 ON OFF 1 OFF ON ORDERING INFORMATION Temp Range Package Part Number -40 to 85°C SC70-6 DG2002DL www.vishay.com 1 DG2002 New Product Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125°C Power Dissipation (Packages)b 6-Pin SO70c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 25_C SPECIFICATIONS (V+ = 2.0 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 2.0 V, "10%, VIN = 0.4 or 1.6 Ve Limits –40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistance rON Flatnessd Switch Off Leakage Currentf VNO, VNC, VCOM rON V+ = 1.8 V, VCOM = 1.0 V, INO, INC = 10 mA Room Fulld 38 39.3 rON Flatness V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA Room 21 INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) 46.1 47.1 W V+ = 2.2 V VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V Room Fulld –250 –3.0 250 3.0 pA nA Room Fulld –250 –3.0 250 3.0 pA nA Room Fulld –250 –3.0 250 3.0 pA nA 1.6 Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Cin Full Input Capacitanced Input Current IINL or IINH VIN = 0 or V+ Full 0.4 3 –1 V pF 1 mA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Charge Injectiond td QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced Channel-On Capacitanced VNO or VNC = 1.5 V, RL = 300 W, W CL = 35 pF Figures 1 and 2 CNO(off), CNC(off) Room Fulld 22 31 32 Room Fulld 10 17 18 ns 10 pC Room CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W W, CL = 5 pF, f = 1 MHz 1 12 Room 5 Room –67 Room –71 Room 5 Room 29 dB VIN = 0 or V+, f = 1 MHz CON pF Power Supply Power Supply Range V+ Power Supply Currentd I+ Power Consumption PC www.vishay.com 2 1.8 0.01 VIN = 0 or V+ 2.2 V 1.0 mA 2.2 mW Document Number: 71448 S-03501—Rev. A, 16-Apr-01 DG2002 New Product Vishay Siliconix SPECIFICATIONS (V+ = 3.0 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve Limits –40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistanced rON Flatnessd Switch Off Leakage Current f VNO, VNC, VCOM rON V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA Room Full 12.2 13 rON Flatness V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA Room 5 INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) 14.8 15.8 W V+ = 3.3 V VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V Room Full –500 –4.0 500 4.0 pA nA Room Full –500 –4.0 500 4.0 pA nA Room Full –500 –4.0 500 4.0 pA nA 2 Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Cin Full Input Capacitanced Input Current IINL or IINH VIN = 0 or V+ Full 0.4 3 –1 V pF 1 mA Dynamic Characteristics Turn-On Timed tON Turn-Off Timed tOFF Break-Before-Make Timed Charge Injectiond td QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced Channel-On Capacitanced VNO or VNC = 2.0 V, RL = 300 W, W CL = 35 pF Figure 1 and 2 CNO(off), CNC(off) Room Full 12 21 22 Room Full 7 14 15 ns 10 pC Room CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W W, CL = 5 pF, f = 1 MHz 1 6 Room 5 Room –67 Room –69 Room 5 Room 29 dB VIN = 0 or V+, f = 1 MHz CON pF Power Supply Power Supply Range V+ Power Supply Current I+ Power Consumption PC Document Number: 71448 S-03501—Rev. A, 16-Apr-01 2.7 3.3 0.01 VIN = 0 or V+ V 1.0 mA 3.3 mW www.vishay.com 3 DG2002 New Product Vishay Siliconix SPECIFICATIONS (V+ = 5.0 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve Limits –40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistance rON Flatnessd VNO, VNC, VCOM rON V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA Room Full 6.4 7.4 rON Flatness V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA Room 3 INO(off), INC(off) Switch Off Leakage Current ICOM(off) Channel-On Leakage Current ICOM(on) 7.8 8.8 W V+ = 5.5 V VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V V+ = 5.5 V, V+ = 5.5 V VNO, VNC = VCOM = 1 V/4.5 V Room Full –1.0 –4.0 1.0 4.0 Room Full –1.0 –4.0 1.0 4.0 Room Full –1.0 –4.5 1.0 4.5 2.4 nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Cin Full Input Current IINL or IINH VIN = 0 or V+ Full 0.8 3 –1 V pF 1 mA Dynamic Characteristics Turn-On Timed tON Turn-Off Timed tOFF Break-Before-Make Timed Charge Injectiond td QINJ Off-Isolationd OIRR Crosstalkd XTALK Source-Off Capacitanced Channel-On Capacitanced VNO or VNC = 3 V, RL = 300 W, W CL = 35 pF Figure 1 and 2 CNO(off), CNC(off) Room Full 8 15 16 Room Full 6 13 14 ns 10 pC Room CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3 RL = 50 W W, CL = 5 pF, f = 1 MHz 1 4 Room 5 Room –69 Room –69 Room 5 Room 29 dB VIN = 0 or V+, f = 1 MHz CON pF Power Supply Power Supply Range V+ Power Supply Current I+ Power Consumption PC 4.5 5.5 0.01 VIN = 0 or V+ V 1.0 mA 5.5 mW Notes: a. b. c. d. e. f. Room = 25°C, Full = as determined by the operating suffix. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Typical values are for design aid only, not guaranteed nor subject to production testing. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. www.vishay.com 4 Document Number: 71448 S-03501—Rev. A, 16-Apr-01 DG2002 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rON vs. VCOM Supply Voltage rON vs. Analog Voltage and Temperature 35 40 30 V+ = 1.8 V r ON – On-Resistance ( W ) r ON – On-Resistance ( W ) 35 30 25 20 V+ = 2 V 15 V+ = 3 V V+ = 5 V 10 25 V+ = 2 V 20 85_C 15 25_C –40_C 85_C 25_C –40_C 10 5 5 0 0 0 1 2 3 4 0 5 1 2 VCOM – Analog Voltage (V) 3 4 5 6 VCOM – Analog Voltage (V) Supply Current vs. Temperature Supply Current vs. Input Switching Frequency 10 m 10 V+ = 5 V VIN = 0 V 1m I+ – Supply Current (A) I+ – Supply Current (nA) V+ = 5 V 1 0.1 100 m 10 m 1m 100 n 10 n 0.01 –60 1n –40 –20 0 20 40 60 80 10 100 100 1K 10 K 100 K 1M 10 M Input Switching Frequency (Hz) Temperature (_C) Leakage Current vs. Temperature Leakage vs. Analog Voltage 150 10000 V+ = 5 V V+ = 5 V T = 25_C 100 Leakage Current (pA) Leakage Current (pA) 1000 100 INO(off)/INC(off) 10 0 ICOM(off) INO(off)/INC(off) –50 ICOM(on) ICOM(on) –100 ICOM(off) 1 –60 50 –150 –40 –20 0 20 40 Temperature (_C) Document Number: 71448 S-03501—Rev. A, 16-Apr-01 60 80 100 0 1 2 3 4 5 VCOM, VNO, VNC – Analog Voltage www.vishay.com 5 DG2002 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Switching Time vs. Temperature and Supply Voltage Insertion Loss, Off-Isolation, Crosstalk vs. Frequency 30 0 LOSS t ON, tON V+ = 2 V 25 20 tON V+ = 3 V 15 tON V+ = 5 V tOFF V+ = 2 V tOFF V+ = 3 V 10 Loss, OIRR, XTALK (dB) t OFF – Switching Time (ns) –10 tOFF V+ = 5 V 5 –20 –30 –40 –50 OIRR –60 V+ = 3 V RL = 50 W –70 XTALK –80 –90 0 –60 –40 –20 0 20 40 60 80 –100 100 K 100 1M 100 M 1G Charge Injection vs. Analog Voltage 1.8 20 1.6 15 1.4 Q – Charge Injection (pC) V T – Switching Threshold (V) Switching Threshold vs. Supply Voltage 1.2 1.0 0.8 0.6 0.4 10 V+ = 5 V 5 0 V+ = 3 V –5 V+ = 2 V V+ = 2.5 V –10 –15 0.2 0.0 –20 0 1 2 3 4 V+ – Supply Voltage (V) www.vishay.com 6 10 M Frequency (Hz) Temperature (_C) 5 6 0 1 2 3 4 5 6 VCOM – Analog Voltage (v) Document Number: 71448 S-03501—Rev. A, 16-Apr-01 DG2002 New Product Vishay Siliconix TEST CIRCUITS V+ VINH Logic Input VINL V+ Switch Input Switch Output COM NO or NC tr t 5 ns tf t 5 ns 50% VOUT 0.9 x VOUT Switch Output IN Logic Input RL 300 W GND CL 35 pF 0V tOFF tON Logic “1” = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) V OUT + V COM ǒ RL R L ) R ON Ǔ FIGURE 1. Switching Time V+ Logic Input V+ tr <5 ns tf <5 ns VINL COM NO VNO VINH VO NC VNC RL 300 W IN CL 35 pF GND VNC = VNO VO Switch Output 90% 0V tD tD CL (includes fixture and stray capacitance) FIGURE 2. Break-Before-Make Interval V+ Rgen DVOUT V+ COM NC or NO VOUT VOUT + Vgen IN CL = 1 nF IN On Off On GND Q = DVOUT x CL VIN = 0 – V+ IN depends on switch configuration: input polarity determined by sense of switch. FIGURE 3. Charge Injection Document Number: 71448 S-03501—Rev. A, 16-Apr-01 www.vishay.com 7 DG2002 New Product Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ NC or NO 0V, 2.4 V IN COM RL V COM Off Isolation + 20 log V NOńNC GND Analyzer FIGURE 4. Off-Isolation V+ 10 nF V+ COM Meter IN 0 V, 2.4 V NC or NO HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz FIGURE 5. Channel Off/On Capacitance www.vishay.com 8 Document Number: 71448 S-03501—Rev. A, 16-Apr-01