DG2018/2019 New Product Vishay Siliconix Low Voltage, Dual DPDT and Quad SPDT Analog Switches FEATURES BENEFITS APPLICATIONS D Low Voltage Operation (1.8 V to 5.5 V) D Low On Resistance – rDS(on) : 6 W @ 2.7 V D Low Voltage Logic Compatible – DG2019: VINH = 1 V D High Bandwidth: 150 MHz D QFN-16 Package D Ideal for Both Analog and Digital Signal Switching D Reduced Power Consumption D High Accuracy D Reduced PCB Space D Fast Switching D Low Leakage D D D D D Cellular Phones Audio and Video Signal Routing PCMCIA Cards Battery Operated Systems Portable Instrumentation DESCRIPTION The DG2018 and DG2019 are low voltage, single supply analog switches. The DG2018 is a dual double-pole/double-throw (DPDT) with two control inputs that each controls a pair of single-pole/double-throw (SPDT). The DG2019 uses one control pin to operate four independent SPDT switches. When operated on a +3-V supply, the DG2018’s control pins are compatible with 1.8-V digital logic. The DG2019 has an available feature of a VL pin that allows a 1.0-V threshold for the control pin when VL is powered with 1.5 V. Built on Vishay Siliconix’s low voltage submicron CMOS process, the DG2018 and DG2019 are ideal for high performance switching of analog signals; providing low on-resistance (6 W @ +2.7 V), fast speed (Ton, Toff @ 42 ns and 16 ns), and a bandwidth that exceeds 150 MHz. The DG2018 and DG2019 were designed to offer solutions that extend beyond audio/video functions, to providing the performance required for today’s demanding mixed-signal switching in portable applications. An epitaxial layer prevents latch-up. Brake-before-make is guaranteed for all SPDT’s. All switches conduct equally well in both directions when on, and blocks up to the power supply level when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE DG2018DN QFN-16 (3 X 3) COM1 NO1 16 NC1 15 V+ NC4 14 13 1 IN1, IN2 12 COM4 Logic NC1 and NC2 NO1 and NO2 0 ON OFF 1 OFF ON Logic NC3 and NC4 NO3 and NO4 0 ON OFF 1 OFF ON IN3, IN4 IN1, IN2 2 11 NO4 NO2 3 10 IN3, IN4 COM2 4 9 5 6 NC2 GND 7 NO3 COM3 Top View Document Number: 72342 S-31644—Rev. A, 01-Aug-03 8 NC3 ORDERING INFORMATION Temp Range Package Part Number -40 to 85°C QFN-16 (3 x 3 mm) DG2018DN www.vishay.com 1 DG2018/2019 New Product Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG2019DN QFN-16 (3 X 3) COM1 NO1 16 15 V+ NC4 14 13 TRUTH TABLE Logic NC1 1 12 COM4 IN 2 11 NO4 NO2 3 10 VL COM2 4 9 5 6 NC2 GND 7 NC3 NC1, 2, 3, and 4 NO1, 2, 3, and 4 0 ON OFF 1 OFF ON ORDERING INFORMATION Temp Range Package Part Number -40 to 85°C QFN-16 (3 x 3 mm) DG2019DN 8 NO3 COM3 Top View ABSOLUTE MAXIMUM RATINGS Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "100 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C www.vishay.com 2 Power Dissipation (Packages)b QFN-16 (3 x 3 mm)c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 850 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 4.0 mW/_C above 70_C Document Number: 72342 S-31644—Rev. A, 01-Aug-03 DG2018/2019 New Product Vishay Siliconix SPECIFICATIONS (V+ = 3 V) Limits Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 3 V, "10% (DG2018 Only) VIN = 0.5 or 1.4 Ve (DG2019 Only) VL = 1.5 V, VIN = 0.4 or 1.0 Ve −40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistance rON Flatness rON Match Between Channels Switch Off Leakage Current VNO, VNC, VCOM rON rON Flatness DrON INO(off), INC(off) ICOM(off) Channel-On Leakage Current ICOM(on) V+ = 2.7 V, VCOM = 0.2 V/1.5 V INO, INC = 10 mA Room Full 6 12 15 V+ = 2.7 V VCOM = 0 to V+, V+ INO, INC = 10 mA Room 0.5 2 0.6 3 Room Full −1 −10 0.3 1 10 Room Full −1 −10 0.3 1 10 Room Full −1 1.0 0.3 1 10 DG2018 Full 1.4 DG2019 Full 1.0 DG2018 Full DG2019 Full V+ = 3.3 V, VNO, VNC =0.3 V/3 V VCOM = 3 V/ 0.3 V V+ = 3.3 V, VNO, VNC = VCOM = 0.3 V/ 3 V Room W nA Digital Control Input High Voltage VINH VL = 1.5 V Input Low Voltage VINL Input Capacitance Cin f = 1 MHz Full IINL or IINH VIN = 0 or V+ Full Input Current VL = 1.5 V 0.5 V 0.4 9 −1 pF 1 mA Dynamic Characteristics Turn-On Time tON VNO or VNC = 2.0 2 0 V, V RL = 300 W W, CL = 35 pF Turn-Off Time Break-Before-Make Time tOFF Room Full 42 55 65 Room Full 16 25 35 td VNO or VNC = 2.0 V, RL = 50 W, CL = 35 pF Full Charge Injectiond QINJ CL = 1 nF, VGEN = 0 V, RGEN = 0 W Room −1.46 Off-Isolationd OIRR Room −54 Crosstalkd XTALK Room −53 CNO(off) Room 9 CNC(off) Room 9 Room 30 Room 30 Full 0.01 NO, NC Off Capacitanced Channel On Capacitanced Channel-On CNO(on) RL = 50 W, W CL = 5 pF, pF f = 1 MHz VIN = 0 or V+, V+ f = 1 MHz CNC(on) ns 1 pC dB pF Power Supply Power Supply Current I+ VIN = 0 or V+ 1.0 mA Notes: a. b. c. d. e. Room = 25°C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Document Number: 72342 S-31644—Rev. A, 01-Aug-03 www.vishay.com 3 DG2018/2019 New Product Vishay Siliconix SPECIFICATIONS (V+ = 5 V) Limits Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 5 V, "10%, (DG2018 Only) VIN = 0.8 or 1.8 Ve (DG2019 Only) VL = 1.5 V, VIN = 0.4 or 1.0 Ve −40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistance rON rON Flatness rON Flatness rON Match Between Channels Switch Off Leakage VNO, VNC, VCOM Currentf DrON INO(off), INC(off) ICOM(off) Channel-On Leakage Currentf ICOM(on) V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA V+ = 4.5 V VCOM = 0 to V+, V+ INO, INC = 10 mA Room Full 4 8 10 Room 0.6 1.2 0.6 1.2 Room Full −1 −10 0.03 1 10 Room Full −1 −10 0.03 1 10 Room Full −1 −10 0.03 1 10 DG2018 Full 1.8 DG2019 Full 1.0 DG2018 Full DG2019 Full V+ = 5.5 V VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V V+ = 5.5 V, VNO, VNC = VCOM = 1 V/4.5 V Room W nA Digital Control Input High Voltage VINH Input Low Voltage VINL Input Capacitance Cin Input Current IINL or IINH VL = 1.5 V VL = 1.5 V 0.8 0.4 Full VIN = 0 or V+ Full V 9 pF 1 1 mA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF VNO or VNC = 3 V V, RL = 300 W, W CL = 35 pF Break-Before-Make Time Charge Injectiond 48 52 Room Full 19 33 35 td VNO or VNC = 3 V, RL = 50 W, CL = 35 pF Full CL = 1 nF, VGEN = 0 V, RGEN = 0 W Room −2.46 Room −54 Room −53 CNO(off) Room 7.5 CNC(off) Room 7.5 Room 30 Room 30 OIRR Crosstalkd XTALK Channel On Capacitanced Channel-On 44 QINJ Off-Isolationd Source Off Capacitanced Source-Off Room Full CNO(on) RL = 50 W, W CL = 5 pF, pF f = 1 MHz VIN = 0 or V+, V+ f = 1 MHz CNC(on) ns 1 pC dB pF Power Supply Power Supply Range V+ Power Supply Current I+ 1.8 VIN = 0 or V+ Full 0.01 5.5 V 1.0 mA Notes: a. b. c. d. e. f. Room = 25°C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Not production tested. www.vishay.com 4 Document Number: 72342 S-31644—Rev. A, 01-Aug-03 DG2018/2019 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rON vs. VCOM and Supply Voltage rON vs. Analog Voltage and Temperature 10 9 r ON − On-Resistance ( W ) r ON − On-Resistance ( W ) T = 25_C ICOM= 10 mA 8 V+ = 2.7 V 85_C 25_C 8 V+ = 2.7 V 6 V+ = 5.5 V 4 V+ = 3.3 V 2 7 −40_C 6 V+ = 5.5 V 5 85_C 25_C −40_C 4 3 2 1 0 0 0 1 2 3 4 5 6 0 1 2 VCOM − Analog Voltage (V) 3 4 5 6 VCOM − Analog Voltage (V) Supply Current vs. Temperature Supply Current vs. Input Switching Frequency 10000 10 mA 1000 I+ − Supply Current (A) I+ − Supply Current (pA) 1 mA V+ = 5.5 V VIN = 0 V 100 10 100 mA 10 mA 1 mA 100 nA 10 nA 1 −60 0 −40 −20 0 20 40 60 80 100 0 2M Temperature (_C) 6M 8M 10 M Input Switching Frequency (Hz) Leakage Current vs. Temperature Leakage vs. Analog Voltage 10000 150 125 V+ = 5 V 100 Leakage Current (pA) 1000 Leakage Current (pA) 4M INO(off), IINC(off) 100 ICOM(off) ICOM(on) 10 V+= 3.3 V 75 50 ICOM(off) ICOM(on) 25 0 −25 INO(off), INC(off) −50 −75 −100 −125 1 −60 −40 −20 0 20 40 Temperature (_C) Document Number: 72342 S-31644—Rev. A, 01-Aug-03 60 80 100 −150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCOM, VNO, VNC − Analog Voltage (V) www.vishay.com 5 DG2018/2019 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Switching Time vs. Temperature vs. Supply Voltage Switching Voltage vs. Supply Voltage (V+) 50 1.8 RL = 300 W 1.6 tON V+ = 3.3 V Vth − Threshold Voltage tON/toff − Switching Time (ns) 40 tON V+ = 5.5 V 30 tOFF V+ = 3.3 V 20 1.4 ON/OFF 1.2 1.0 OFF/ON 0.8 0.6 0.4 tOFF V+ = 5.5 V 10 DG2018 0.2 0 −60 0.0 −40 −20 0 20 40 60 80 100 0 1 Temperature (_C) 4 5 6 Charge Injection at Source vs. Analog Voltage 10 1.6 8 Q − Charge Injection (pC) DG2019 1.4 Vth − Threshold Voltage 3 V+ − Supply Voltage (V) VIN vs. VL (Typ) 1.8 2 1.2 V+ = 3.3 V V+ = 5.5 V 1.0 0.8 V+ = 5.5 V 6 4 2 0 V+ = 3.3 V −2 0.6 −4 0.4 1.0 −6 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 1 2 3 4 5 6 VCOM − Analog Voltage (V) VL (V) Insertion Loss, Off Isolation and Crosstalk vs. Frequency 20 Insertion Loss −3 dB = 150 MHz 0 Loss, OIRR, Xtalk (dB) −20 V+ = 3.3, 5.5 V RL = 50 W −40 OIRR −60 Crosstalk −80 −100 −120 100 K 1M 10 M 100 M 1G Frequency (Hz) www.vishay.com 6 Document Number: 72342 S-31644—Rev. A, 01-Aug-03 DG2018/2019 New Product Vishay Siliconix TEST CIRCUITS V+ VINH Logic Input V+ VOUT IN Logic Input RL 300 W GND 0.9 x VOUT Switch Output CL 35 pF 0V tON 0V ǒ RL tOFF Logic “1” = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT + VCOM tr t 5 ns tf t 5 ns VINL Switch Output COM NO or NC Switch Input 50% Ǔ R L ) R ON FIGURE 1. Switching Time V+ Logic Input V+ COM NO VNO VINH tr <5 ns tf <5 ns VINL VO NC VNC RL 50 W IN CL 35 pF GND VNC = VNO VO 90% Switch 0V Output tD tD CL (includes fixture and stray capacitance) FIGURE 3. Break-Before-Make Interval V+ Rgen + Vgen VIN = 0 − V+ V+ NC or NO COM IN VOUT DVOUT VOUT CL = 1 nF IN On Off On GND Q = DVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. FIGURE 2. Charge Injection Document Number: 72342 S-31644—Rev. A, 01-Aug-03 www.vishay.com 7 DG2018/2019 New Product Vishay Siliconix TEST CIRCUITS V+ V+ 10 nF 10 nF V+ V+ NC or NO IN COM COM RL Analyzer Meter 0 V, 2.4 V GND IN NC or NO HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz VCOM Off Isolation + 20 log V NOńNC FIGURE 4. Off-Isolation www.vishay.com 8 COM 0V, 2.4 V FIGURE 5. Channel Off/On Capacitance Document Number: 72342 S-31644—Rev. A, 01-Aug-03