DG2011 Vishay Siliconix Low-Voltage, Low rON, Single SPDT Analog Switch In SC-89 Package FEATURES BENEFITS D Low Voltage Operation (1.8 V to 5.5 V) D Low On-Resistance - rON: 1.8 W @ 2.7 V D Low Charge Injection D Low Voltage Logic Compatible D SC-89 Package (1.6 x 1.6 mm) Pb-free Available D D D D D APPLICATIONS Reduced Power Consumption Simple Logic Interface High Accuracy Reduce Board Space Guaranteed 2-V Operation D D D D D D D Cellular Phones Communication Systems Portable Test Equipment Battery Operated Systems Sample and Hold Circuits ADC and DAC Applications Low Voltage Data Acquisition Systems DESCRIPTION The DG2011 is a low on-resistance, single-pole/double-throw monolithic CMOS analog switch. It is designed for low voltage applications with guaranteed operation at 2 V. The DG2011 is ideal for portable and battery powered equipment, requiring high performance and efficient use of board space. In additional to the low on-resistance (1.8 Ω @ 2.7 V), charge injection is less than 10 pC over the entire analog range. Break-before-make is guaranteed. The switch conducts equally well in both directions when on, and blocks up to the power supply level when off. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. For analog switching products manufactured with 100% matte tin device terminations, the lead (Pb)-free “—E3” suffix is being used as a designator. The DG2011 is built on Vishay Siliconix’s low voltage JI2 process. An epitaxial layer prevents latchup. The DG2011 represents a breakthrough in packaging development for analog switching products. The SC-89 package (1.6 x 1.6 mm2) – also know as SOT-666 in the industry – reduces board spacing by approximately 40% while obtaining performance comparable to SC-70 analog switch devices available today. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION SC-89 IN 1 6 NO (Source1) V+ 2 5 COM GND 3 4 NC (Source2) Top View TRUTH TABLE Logic NC NO 0 ON OFF 1 OFF ON COMMERCIAL ORDERING INFORMATION Ax Temp Range Pin 1 Device Marking: Ax x = Date/Lot Traceability Code Document Number: 70102 S-50509—Rev. E, 21-Mar-05 -40 to 85°C Package Part Number SC-89 (SOT-666) with Tape and Reel DG2011DX-T1 SC-89 (SOT-666) Lead (Pb)-Free with Tape and Reel DG2011DX-T1—E3 www.vishay.com 1 DG2011 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Reference to GND V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V) Continuous Current (NO, NC, COM pins) . . . . . . . . . . . . . . . . . . . "150 mA Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "300 mA (Pulsed at 1 ms, 10% duty cycle) Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C Power Dissipation (Packages)b SC-89c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172 mW Notes: a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 2.15 mW/_C above 70_C SPECIFICATIONS (V+ = 2.0 V) Test Conditions Otherwise Unless Specified Parameter Symbol V+ = 2.0 V, VIN = 0.4 or 1.6 Ve Limits −40 to 85_C Tempa Minb Full 0 Typc Maxb Unit V+ V 5.5 5.5 W Analog Switch Analog Signal Ranged On-Resistance Switch Off Leakage Currentf VNO, VNC, VCOM rON INO(off), INC(off) ICOM(off) Channel-On Leakage Current f ICOM(on) V+ = 2.0 V, VCOM = 0.2 V/0.9 V INO, INC = 20 mA V+ = 2.2 V VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V Room Full 3.5 Room Full −1 −10 1 10 Room Full −1 −10 1 10 Room Full −1 −10 1 10 1.5 nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Cin Full Input Current IINL or IINH VIN = 0 or V+ Full 0.4 4 1 V pF 1 mA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time tBBM Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced CNO(off), CNC(off) Channel-On Capacitanced CON VNO or VNC = 1.5 V, RL = 300 W, CL = 35 pF Room Full 75 110 113 Room Full 37 71 76 Room CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W, W CL = 5 pF, pF f = 1 MHz VIN = 0 or V+, f = 1 MHz 1 ns 37 Room 7 Room −62 Room −69 Room 29 Room 85 pC dB pF Power Supply Power Supply Range V+ Power Supply Current I+ www.vishay.com 2 1.8 VIN = 0 or V+ 0.01 5.5 V 1.0 mA Document Number: 70102 S-50509—Rev. E, 21-Mar-05 DG2011 Vishay Siliconix SPECIFICATIONS (V+ = 3 V) Test Conditions Otherwise Unless Specified Parameter V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve Limits −40 to 85_C Tempa Minb VNO, VNC, VCOM Full 0 rON Room Full Symbol Typc Maxb Unit V+ V Analog Switch Analog Signal Ranged On-Resistance rON Match rON Flatness Switch Off Leakage Current DrON rON Flatness INO(off), INC(off) ICOM(off) Channel-On Leakage Current ICOM(on) V = 2.7 V+ 2 7 V, V VCOM = 0 0.9 9 V/1 V/1.5 5V INO, INC = 50 mA 1.8 Room 0.2 Room V+ = 3.3 V, VNO, VNC = 1 V/3 V VCOM = 3 V/1 V V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V 2.7 2.9 0.2 W 0.5 Room Full −1 −10 1 10 Room Full −1 −10 1 10 Room Full −1 −10 1 10 1.6 nA Digital Control Input High Voltage VINH Full Input Low Voltage VINL Full Input Capacitance Input Current Full Cin IINL or IINH 0.4 VIN = 0 or V+ Full 4 1 V pF 1 mA Dynamic Characteristics Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time tBBM Charge Injectiond QINJ Off-Isolationd OIRR Crosstalkd XTALK NO, NC Off Capacitanced CNO(off), CNC(off) Channel-On Capacitanced CON VNO or VNC = 2.0 V, RL = 300 W, CL = 35 pF Room Full 45 75 77 Room Full 29 59 62 Room CL = 1 nF, VGEN = 0 V, RGEN = 0 W RL = 50 W, W CL = 5 pF, pF f = 1 MHz VIN = 0 or V+, f = 1 MHz 1 ns 16 Room 2 Room −62 Room −68 Room 28 Room 84 pC dB pF Power Supply Power Supply Range V+ Power Supply Current I+ Power Consumption PC 1.8 VIN = 0 or V+ 0.01 5.5 V 1.0 mA 3.3 mW Notes: a. b. c. d. e. f. Room = 25°C, Full = as determined by the operating suffix. Typical values are for design aid only, not guaranteed nor subject to production testing. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guarantee by design, nor subjected to production test. VIN = input voltage to perform proper function. Guaranteed by 5-V leakage testing, not production tested. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 70102 S-50509—Rev. E, 21-Mar-05 www.vishay.com 3 DG2011 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rON vs. VCOM and Supply Voltage rON vs. Analog Voltage and Temperature 6 6 A: 85_C B: 25_C C: −40_C T = 25_C 5 rON − On-Resistance ( Ω ) rON − On-Resistance ( Ω ) 5 4 V+ = 2.0 V IS = 20 mA 3 2 V+ = 3.0 V IS = 50 mA V+ = 5.0 V IS = 100 mA 1 V+ = 2.0 V IS = 20 mA 4 A B 3 C 2 A B V+ = 5.0 V IS = 100 mA A B C C 1 0 0 0 1 2 3 4 5 6 0 1 2 VCOM − Analog Voltage (V) 3 4 5 6 VCOM − Analog Voltage (V) Supply Current vs. Temperature Supply Current vs. Input Switching Frequency 10000 10 mA V+ = 5.0 V VIN = 0 V V+ = 5.0 V 1 mA 1000 I+ − Supply Current (A) I+ − Supply Current (pA) V+ = 3.0 V IS = 50 mA 100 10 100 mA 10 mA 1 mA 100 nA 10 nA 1 nA 1 100 pA −60 −40 −20 0 20 40 60 80 100 100 1k Temperature (_C) Leakage Current vs. Temperature 1M 10 M 100 M Leakage vs. Analog Voltage V+ = 5.0 V 200 V+ = 5.0 V 150 ION(off)/INC(off) Leakage Current (pA) 1000 Leakage Current (pA) 100 k 250 10000 100 10 k Input Switching Frequency (Hz) ICOM(on) ICOM(off) 10 100 ICOM(off) 50 ICOM(on) 0 −50 ION(off)/INC(off) −100 −150 −200 −250 1 −60 −40 −20 0 20 40 Temperature (_C) www.vishay.com 4 60 80 100 0 1 2 3 4 5 VCOM, VNO, VNC, − Analog Voltage (V) Document Number: 70102 S-50509—Rev. E, 21-Mar-05 DG2011 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency Switching Time vs. Temperature and Supply Voltage 10 90 0 tON V+ = 2 V LOSS −10 70 60 tON V+ = 3 V 50 40 tOFF V+ = 2 V tON V+ = 5 V 30 tOFF V+ = 5 V tOFF V+ = 3 V 20 LOSS, OIRR, XTLAK (dB) tON, tOFF, − Switchint Time (ns) 80 10 −20 −30 −40 XTALK −50 OIRR −60 −70 V+ = 5.0 V RL = 50 W −80 0 −60 −90 −40 −20 0 20 40 60 80 100 100 K 1M 10 M 2.5 20 ÍÍÍÍÍÍÍ ÍÍÍÍÍÍÍ ÍÍÍÍÍÍÍ ÍÍÍÍÍÍÍ 1.5 1.0 0.5 1G Charge Injection vs. Analog Voltage 30 Q − Charge Injection (pC) VT − Switchint Threshold (V) Switching Threshold vs. Supply Voltage 3.0 2.0 100 M Frequency (Hz) Temperature (_C) V+ = 2 V 10 V+ = 5 V 0 V+ = 3 V −10 −20 0.0 −30 0 1 2 3 4 5 V+ − Supply Voltage (V) Document Number: 70102 S-50509—Rev. E, 21-Mar-05 6 7 0 1 2 3 4 5 6 VCOM − Analog Voltage (V) www.vishay.com 5 DG2011 Vishay Siliconix TEST CIRCUITS V+ +3V Logic Input V+ NO or NC Switch Input 0V Switch Output COM VOUT RL 300 W GND 0.9 x VOUT Switch Output IN Logic Input tr t 5 ns tf t 5 ns 50% CL 35 pF 0V tON 0V Logic “1” = Switch On Logic input waveforms inverted for switches that have the opposite logic sense. CL (includes fixture and stray capacitance) VOUT + VCOM ǒ RL tOFF Ǔ R L ) R ON FIGURE 1. Switching Time V+ Logic Input V+ COM NO VNO 3V tr <5 ns tf <5 ns 0V VO NC VNC RL 300 W IN CL 35 pF GND VNC = VNO VO Switch Output 90% 0V tD tD CL (includes fixture and stray capacitance) FIGURE 2. Break-Before-Make Interval V+ Rgen + V+ NC or NO COM IN Vgen VOUT CL 3V DVOUT VOUT IN On On Off GND Q = DVOUT x CL IN depends on switch configuration: input polarity determined by sense of switch. FIGURE 3. Charge Injection www.vishay.com 6 Document Number: 70102 S-50509—Rev. E, 21-Mar-05 DG2011 Vishay Siliconix TEST CIRCUITS V+ 10 nF V+ COM 0V, 2.4 V IN COM NC or NO Off Isolation + 20 log RL GND VNCńNO VCOM Analyzer FIGURE 4. Off-Isolation V+ 10 nF V+ COM Meter 0 V, 2.4 V IN NC or NO HP4192A Impedance Analyzer or Equivalent GND f = 1 MHz FIGURE 5. Channel Off/On Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70102. Document Number: 70102 S-50509—Rev. E, 21-Mar-05 www.vishay.com 7