FS0809.H STANDARD SCR TO220-AB On-State Current Gate Trigger Current 8 Amp > 2 mA to < 15 mA Off-State Voltage 200 V ÷ 600 V These series of Silicon Controlled R ectifier use a high performance PNPN technology. K These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology. A G Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL IT(RMS) IT(AV) ITSM ITSM I2t VGRM IGM PGM PG(AV) Tj Tstg Tsld SYMBOL VDRM VRRM PARAMETER On-state Current Average On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Reverse Gate Voltage Peak Gate Current Peak Gate Dissipation Gate Dissipation Operating Temperature Storage Temperature Soldering Temperature PARAMETER Repetitive Peak Off State Voltage CONDITIONS Min. 180º Conduction Angle, Tc = 110 ºC Half Cycle, Θ = 180 º, TC = 110 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz tp = 10ms, Half Cycle IGR = 10 µA 20 µs max. 20 µs max. 20ms max. -40 -40 10s max. CONDITIONS RGK = 1 KΩ Max. Unit 8 5 100 95 45 5 4 5 1 +125 +150 260 A A A A A 2s V A W W ºC ºC ºC VOLTAGE B 200 D 400 Unit M 600 V Dec - 02 FS0809.H STANDARD SCR Electrical Characteristics SYMBOL PARAMETER CONDITIONS SENSITIVITY IGT Gate Trigger Current VD = 12 VDC , RL = 140Ω. Tj = 25 ºC IDRM / IRRM Off-State Leakage Current VTM VGT VGD On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage VD = VDRM , RGK = 220Ω Tj = 125 ºC VR = VRRM , Tj = 25 ºC at IT = 16 Amp, tp = 380 µs, Tj = 25 ºC VD = 12 VDC , RL = 140Ω, Tj = 25 ºC VD = VDRM , RL = 3.3KΩ, RGK = 220Ω Tj = 125 ºC IH IL dv / dt IT = 100 mA , Gate open Holding Current IG = 1.2 IGT Tj = 25 ºC Latching Current Critical Rate of Voltage Rise VD = 0.67 x VDRM , Gate open Tj = 125 ºC Critical Rate of Current Rise IG = 2 x IGT Tr ≤ 100 ns, F = 60 Hz, di / dt MIN MAX MAX MAX MAX MAX MIN 09 2 15 2 5 1.6 1.3 0.2 MAX Unit mA mA µA V V V 30 mA MAX MIN 70 150 mA V/µs MIN 50 A/µs Tj = 125 ºC Rth(j-c) Thermal Resistance Junction-Case for DC 20 ºC/W Rth(j-a) Thermal Resistance Junction-Amb for DC 60 ºC/W Vt0 Threshold Voltage Tj = 125 ºC MAX 0.85 V Rd Dynamic resistance Tj = 125 ºC MAX 46 mΩ PART NUMBER INFORMATION F S 08 09 B H 00 TU FAGOR PACKAGING FORMING SCR CURRENT CASE VOLTAGE SENSITIVITY Dec - 02 FS0809.H STANDARD SCR Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: Average and D.C. on-state current versus case temperature. P (W) I T(av) (A) 10 10 8 8 6 6 D.C. 4 α = 180 º 4 2 360 º 2 α IT(av)(A) 0 0 1 2 3 4 5 6 7 T case (ºC) 0 0 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 25 50 75 100 125 Fig. 4: Relative variation of gate trigger current, holding and latching current versus junction temperature. K = [Zth(j-c) / Rth (j-c)] IGT, IH (Tj) / IGT, IH (Tj = 25 ºC) 2.0 1.0 1.8 1.6 IGT 1.4 0.5 1.2 IH & IL 1.0 0.8 0.6 0.2 0.4 0.2 0.1 1E-3 tp (s) 1E-2 1E-1 0.0 1E+0 Fig. 5: Non repetitive surge peak on-state current versus number of cycles. Tj (ºC) -40 -20 0 20 40 60 80 100 120 140 Fig. 6: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp < 10 ms, and corresponding value of I2t. ITSM(A). I2t (A2s) I TSM (A) 300 80 Tj initial = 25 ºC Tj initial = 25 ºC F = 50 Hz 70 ITSM 60 100 50 40 50 30 I2 t 20 20 10 0 1 10 100 Number of cycles 1000 tp(ms) 10 1 2 5 10 Dec - 02 FS0809.H STANDARD SCR Fig. 7: On-state characteristics (maximum values). ITM(A) 100.0 Tj = Tj max. 10.0 Tj = 25 ºC 1.0 Tj max Vto = 0.85 V Rt = 46 mΩ VTM(V) 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 PACKAGE MECHANICAL DATA TO-220AB REF. c B b2 L F øI A 14 c2 a1 13 12 a2 M b1 e c1 A a1 a2 B b1 b2 C c1 c2 e F I I4 L I2 I3 M Min. 15.20 DIMENSIONS Milimeters Nominal Max. 15.90 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75 15.80 2.65 1.14 1.14 16.40 14.00 10.40 0.88 1.32 4.60 0.70 2.72 2.70 6.60 3.85 16.80 2.95 1.70 1.70 2.60 Dec - 02