FT01...N SURFACE MOUNT TRIAC SOT223 (Plastic) On-State Current Gate Trigger Current 1 Amp < 3 mA to < 25 mA Off-State Voltage MT2 200 V ÷ 400 V (02, 03) 200 V ÷ 600 V (04, 05, 07, 09, 10) MT1 MT2 The FT01 series of TRIACs uses a high performance PNPN technology. G These parts are intended for general purpose applications where logic compatible gate sensitivity is required using surface mount technology. Absolute Maximum Ratings, according to IEC publication No. 134 SYMBOL PARAMETER IT(RMS) ITSM ITSM I2t IGM PGM PG(AV) di/dt RMS On-state Current Non-repetitive On-State Current Non-repetitive On-State Current Fusing Current Peak Gate Current Peak Gate Dissipation Gate Dissipation Critical rate of rise of on-state current Tj Tstg Tsld Operating Temperature Storage Temperature Soldering Temperature SYMBOL VDRM VRRM CONDITIONS All Conduction Angle, Tab = 90 ºC Half Cycle, 60 Hz Half Cycle, 50 Hz tp = 10 ms, Half Cycle 20 µs max. 20 µs max. 20 ms max. IG = 2 x IGT Tr ≤ 100 ns, F = 120 Hz Tj = 125 ºC -40 -40 1.6 mm from case, 10s max. PARAMETER Repetitive Peak Off State Voltage Min. Max. Unit 1.0 8.5 8 0.35 1 2 0.1 20 A A A A2s A W W A/µs +125 +150 260 ºC ºC ºC VOLTAGE B 200 D 400 Unit M* 600 V * 04, 05, 07, 09 & 10 sensitivities Mar - 03 FT01...N SURFACE MOUNT TRIAC Electrical Characteristics SYMBOL IGT PARAMETER Gate Trigger Current VD = 12 VDC , RL = 30Ω, Tj = 25 ºC IDRM /IRRM Off-State Leakage Current VD = VDRM , Vto Rd VTM * VGT VGD IH* IL Quadrant CONDITIONS Threshold Voltage Dynamic Resistance On-state Voltage Gate Trigger Voltage Gate Non Trigger Voltage Holding Current Latching Current Tj = 125 ºC Tj = 25 ºC VR = VRRM , Tj = 125 ºC Tj = 125 ºC IT = 1.1 Amp, tp = 380 µs, Tj = 25 ºC VD = 12 VDC , RL = 30Ω, Tj = 25 ºC VD = VDRM , RL = 3.3KΩ, Tj = 125 ºC IT = 50 mA Tj = 25 ºC IG = 1.2 IGT, Tj = 25 ºC dv / dt* Critical Rate of Voltage Rise VD = 0.67 x VDRM , Gate open SENSITIVITY 02 03 04 Q1÷Q3 MAX 3 3 5 Q4 MAX 3 5 MAX MAX MAX MAX MAX Q1÷Q4 MAX Q1÷Q4 MIN MAX 7 Q1,Q3,Q4 MAX 7 Q2 MAX 14 MIN 10 Unit 05 07 09 10 5 5 10 25 mA 5 7 10 25 mA 0.5 µA 5 V 0.95 mΩ 400 V 1.5 V 1.3 V 0.2 mA 10 25 25 mA 10 25 50 20 50 200 V/µs 20 Tj = 125 ºC (dv/dt)c* Critidal rise rate of (di/dt)c= 0.44 A/ms Tj = 110 ºC MIN 0.5 commutating off-state Voltage 1 2 4.4 V/µs Rth(j-l) Thermal Resistance Junction-Leads for AC 60 ºC/W Rth(j-a) Thermal Resistance Junction-Ambient 150 ºC/W (*) For either polarity of electrode MT2 voltage with reference to electrode MT1. PART NUMBER INFORMATION F T 01 05 B N 00 RB FAGOR PACKAGING FORMING TRIAC CURRENT CASE VOLTAGE SENSITIVITY Mar - 03 FT01...N SURFACE MOUNT TRIAC Fig. 2: Correlation between maximum power dissipation and maximum allowable temperature (Tamb and T tab). Fig. 1: Maximum power dissipation versus RMS on-state current P (W) T tab (ºC) P (W) 1.6 1.6 1.4 α α = 180 º 180 º α Rth (j-l) ºC/W α = 120 º 1.2 1.0 1.2 -95 -100 Rth (j-a) ºC/W 0.8 α = 60 º 0.4 -90 1.0 α = 90 º 0.6 1.4 α = 30 º 0.2 IT(RMS)(A) 0.0 0.8 -105 0.6 -110 0.4 -115 0.2 -120 -125 Tamb (ºC) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 20 40 60 80 100 120 140 Fig. 4: Relative variation of thermal impedance junction to ambient versus pulse duration. Fig. 3: RMS on-state current versus tab temperature I T(RMS) (A) Zth(j-a) / Rth(j-a) 1.2 1.00 1.0 α = 180 º 0.8 0.10 0.6 0.4 Standard foot print, e(Cu) = 35 µm 0.2 T tab (ºC) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Igt (Tj) Ih (Tj) Igt (Tj = 25 ºC) Ih (Tj = 25 ºC) 0.01 1E-3 tp (s) 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig. 6: Non repetitive surge peak on-state current versus number of cycles. I TSM (A) 2.6 8 Tj initial = 25 ºC 2.4 2.2 6 2.0 Igt 1.8 1.6 4 1.4 1.2 Ih 1.0 2 0.8 0.6 0.4 Tj (ºC) -40 -20 0 20 40 60 80 100 120 140 Number of cycles 0 1 10 100 1000 Mar - 03 FT01...N SURFACE MOUNT TRIAC Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width: tp ≤ 10 ms, and corresponding value of I2t. Fig. 8: On-state characteristics (maximum values). ITSM(A). I2t (A2s) ITM(A) 10 100 Tj initial = 25 ºC 10 Tj initial 25 ºC ITSM Tj max 1 Tj max Vto = 1.10 V Rt = 0.420Ω 1 I2 t tp(ms) 0.1 1 10 0.1 VTM(V) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 PACKAGE MECHANICAL DATA SOT223 (Plastic) A B 16º max. (4x) C REF. 10º max. H E I J K D F G A B C D E F G H I J K Min. 6.30 6.70 3.30 2.95 0.65 1.50 0.50 0.25 DIMENSIONS Milimeters Typ. 6.50 7.00 3.50 4.60 2.30 3.00 0.70 1.60 0.60 0.02 0.30 Max. 6.70 7.30 3.70 3.15 0.85 1.70 0.70 0.05 0.35 Weight: 0.11 g FOOT PRINT 3.3 1.5 (3x) 1 2.3 6.4 1.5 4.6 Mar - 03