HRD0103C Silicon Schottky Barrier Diode for Rectifying ADE-208-1614 (Z) Rev.0 Jan. 2003 Features • Low reverse voltage drop and suitable for high efficiency reverse current. • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. Laser Mark Package Code HRD0103C S6 SFP Pin Arrangement Cathode mark Mark 1 S6 2 1. Cathode 2. Anode HRD0103C Absolute Maximum Ratings (Ta = 25°C) Item Symbol 1 Value Unit Peak reverse voltage VRM * 30 V Reverse voltage VR 30 V 1 Average rectified current IO * 100 mA Peak forward surge current 300 mA Non-Repetitive peak forward surge current IFM IFSM *2 1 A Junction temperature Tj 125 °C Storage temperature Tstg –55 to +125 °C Notes: 1. See from Fig.3 to Fig.5. 2. 10 ms sine wave 1 pulse. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage VF — — 0.6 V IF = 100 mA Reverse current IR1 — — 0.1 µA VR = 5 V IR2 — — 0.2 Capacitance C — — 8.0 pF Thermal resistance Rth(j-a) — 600 — °C/W Polyimide board * Note: VR = 10 V VR = 0.5 V, f = 1 MHz 1 1. Polyimide board 3.0 1.5 0.8 20h×15w×0.8t 1.5 Unit: mm 2. Please do not use the soldering iron due to avoid high stress to the SFP package. Rev.0, Jan. 2003, page 2 of 6 HRD0103C Main Characteristics 10–3 1.0 Pulse test Pulse test 10–4 Reverse current IR (A) Forward current IF (A) 10–1 Ta = 75°C 10–2 Ta = 25°C 10–3 10–4 10 Ta = 50°C 10–6 Ta = 25°C 10–7 10–5 10–6 Ta = 75°C –5 0 0.2 0.4 0.6 0.8 10–8 1.0 0 10 20 30 40 50 Forward voltage VF (V) Reverse voltage VR (V) Fig.1 Forward current vs. Forward voltage Fig.2 Reverse current vs. Reverse voltage 0.030 0.12 0A 0.10 t T t D=— T Tj = 25°C 0.08 Reverse power dissipation Pd (W) Forward power dissipation Pd (W) 0V D=1/6 sin(θ=180°) D=1/3 D=1/2 DC 0.06 0.04 0.02 0 0 0.05 0.10 0.15 0.025 D=5/6 t T t D=— T Tj = 125°C 0.020 D=2/3 D=1/2 0.015 sin(θ=180°) 0.010 0.005 0 0 10 20 30 40 Forward current IF (A) Reverse voltage VR (V) Fig3. Forward power dissipation vs. Forward current Fig4. Reverse power dissipation vs. Reverse voltage Rev.0, Jan. 2003, page 3 of 6 HRD0103C Main Characteristics (cont.) Average rectified current IO (mA) 120 100 VR=VRRM/2 Tj =125°C Rth(j−a)=600°C/W DC 80 D=1/2 sin(θ=180°) 60 D=1/3 D=1/6 40 20 0 −25 0 25 50 75 100 125 Ambient temperature Ta (°C) Fig.5 Average rectified current vs. Ambient temperature Rev.0, Jan. 2003, page 4 of 6 HRD0103C Package Dimensions As of July, 2002 1.0 ± 0.10 0.13 ± 0.05 1.4 ± 0.10 0.5 – 0.55 0.3 ± 0.05 0.6 ± 0.05 Unit: mm Hitachi Code JEDEC JEITA Mass (reference value) SFP — — 0.0010 g Rev.0, Jan. 2003, page 5 of 6 HRD0103C Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://semiconductor.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Colophon 7.0 Rev.0, Jan. 2003, page 6 of 6