ETC HSN278WK

HSN278WK
Silicon Epitaxial Schottky Barrier Diode
ADE-208-1524 (Z)
Rev.0
May. 2002
Features
• Low forward voltage, Low capacitance.
• Miniature Flat Lead Package (MFPAK) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Code
HSN278WK
SI−
MFPAK
Pin Arrangement
3
2
(Top View)
1
1. Anode
2. Anode
3. Cathode
HSN278WK
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
30
V
Reverse voltage
VR
30
V
Non-Repetitive peak forward surge current
200
mA
Peak forward current
IFSM *
IFM
150
mA
Average rectified current
IO
30
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
–55 to +125
°C
Note: 10 ms sine wave 1 pulse one device.
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Forward voltage
VF1
—
—
0.30
V
VF2
—
—
0.95
IR
—
—
700
nA
VR = 10 V
C
—
—
1.50
pF
VR = 1 V, f = 1 MHz
—
100
—
—
V
C = 200 pF, RL = 0 Ω, Both forward and
reverse each 1 shot.
Reverse current
Capacitance
1
ESD-Capability *
Test Condition
IF = 1 mA
IF = 30 mA
Notes: 1. Failure criterion ; IR > 1.4 µA at VR = 10 V
2. Please do not use the soldering iron due to avoid high stress to the MFPAK package.
Rev.0, May. 2002, page 2 of 5
HSN278WK
Main Characteristics
10−4
101
100
10
10
10
−2
Reverse current IR (A)
Forward current IF (A)
10−1
Ta = 75°C
−3
Ta = 25°C
−4
10−5
10−6
10−5
Ta = 75°C
10−6
Ta = 25°C
10−7
10−7
10−8
10−8
0
0.2
0.4
0.6
0.8
1.0
0
5
10
15
20
Forward voltage VF (V)
Reverse voltage VR (V)
Fig.1 Forward current Vs. Forward voltage
Fig.2 Reverse current Vs. Reverse voltage
f=1MHz
Capacitance C (pF)
10
1.0
0.1
0.1
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance Vs. Reverse voltage
Rev.0, May. 2002, page 3 of 5
HSN278WK
Package Dimensions
As of January, 2002
3-0.2 +0.1
–0.05
0.15 +0.1
–0.05
(0.1)
1.4 ± 0.05
0.45
0.45
(0.1)
0.8 ± 0.1
0.2
1.2 ± 0.05
0.2
Unit: mm
0.6 MAX
0.9 ± 0.1
Hitachi Code
JEDEC
JEITA
Mass (reference value)
Rev.0, May. 2002, page 4 of 5
MFPAK
—
—
0.0016 g
HSN278WK
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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products.
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.0, May. 2002, page 5 of 5