PRODUCT DATA Micro International, Inc PART NUMBER LDT2907A and LDT2907AT Micro-LID PNP Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com [email protected] Micro-LID Transistors LDT2907A and LDT2907AT Description: The LDT2907A (untinned) and LDT2907AT (tinned) are PNP silicon transistors in very small, rugged, surface mount, 4-post ceramic packages (Micro International manufactured package p/n 4-075-1). The LDT2907A and LDT2907AT meet the general specifications of the 2N2907A transistor. The 4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier which can be provided with gold metallized or pre-tinned lands, and is approved for military, medical implant, sensor, and high reliability applications. The LDT2907A and LDT2907AT can be provided with special feature options such as additional temperature cycling and screening. Maximum Ratings: Parameter Symbol Rating Collector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 60 V Emitter-Base Voltage Vebo 5V Collector Current Ic 600 mA Total Dissipation Pt 350 mW Operating Junction Temperature Tj 150°C Storage Temperature Tstg -65°C to 150°C Operating Temperature Toper -55°C to 125°C 1/3 January 1997 www.microlid.com [email protected] Micro-LID Transistors LDT2907A and LDT2907AT ________________________________________________________________________ Outline / Schematic: TOP VIEW 3 3, 4 2 2 .040 1 1 4 .075 END VIEW SIDE VIEW .035 SUBSTRATE / CIRCUIT BOARD Dimensions / Marking: Length Width Height .075′ ′+ .003′ ′ .040′ ′+ .003′ ′ .035′ ′+ .003′ ′ Post 1 (Emitter) Post 2 (Base) Post 3,4 (Collector) .015′ ′x .010′ ′typ .015′ ′x .010′ ′typ .015′ ′x .012′ ′typ Marking on back of package : Green Dot over Emitter and Red Dot in Center (post down configuration) Standard In-Process Screening Requirements: Ø Semiconductor die and Micro-LID package visual inspection Ø Wire pull test Ø 24 hour stabilization bake at 150°C Ø 10 temperature cycles from –55°C to 125°C Ø 100% electrical test of dc characteristics at 25°C Ø Final visual inspection ________________________________________________________________ 2/3 January 1997 www.microlid.com [email protected] Micro-LID Transistors LDT2907A and LDT2907AT Electrical Characteristics (25°C Ambient) Parameter Symbol Min Typ Max Collector-Base Breakdown Ic = 10 uA, Ie = 0 BVcbo 60 -- -- V Collector-Emitter Breakdown* Ib = 0, Ic = 10 mA BVceo 60 -- -- V Emitter-Base Breakdown Ic = 0, Ie = 10 uA BVebo 5 -- -- V Collector-Base Cutoff Current Vcb = 50 V Icbo -- -- 10 nA DC Forward Current Gain* Ic = 150 mA, Vce = 10 V Hfe 100 -- 300 Collector-Emitter Saturation Ic = 150 mA, Ib = 15 mA Vce (sat) -- -- .4 V Base-Emitter Saturation Ic = 150 mA, Ib = 15 mA Vbe (sat) -- -- 1.3 V Collector Capacitance Vcb = 10 V, Ie = 0 f = 1 MHz Cobo -- -- 8 pF * Pulse test, pulse width < 300 usec, duty cycle < 2% 3/3 January 1997 Units