PRODUCT DATA Micro International, Inc PART NUMBER LDTBFR90 and LDTBFR90T Micro-LID NPN Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com [email protected] Micro-LID Transistors LDTBFR90 and LDTBFR90T Description: The LDTBFR90 (untinned) and LDTBFR90T (tinned) are NPN silicon 5 GHz wideband transistors in very small, rugged, surface mount, 4-post ceramic packages (Micro International manufactured package p/n 4-075-1). The LDTBFR90 and LDTBFR90T meet the general specifications of the BFR90 transistor. The 4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier which can be provided with gold metallized or pre-tinned lands, and is approved for military, medical implant, sensor, and high reliability applications. The LDTBFR90 and LDTBFR90T can be provided with special feature options such as additional temperature cycling, screening, and matching Hfe selection. Maximum Ratings: Parameter Symbol Rating Collector-Base Voltage Vcbo 20 V Collector-Emitter Voltage Vceo 15 V Emitter-Base Voltage Vebo 2V Collector Current Ic 25 mA Total Dissipation Pt 350 mW Operating Junction Temperature Tj 150°C Storage Temperature Tstg -65°C to 150°C Operating Temperature Toper -55°C to 125°C 1/3 December 1997 www.microlid.com [email protected] Micro-LID Transistors LDTBFR90 and LDTBFR90T ______________________________________________________________________________________ Outline / Schematic: TOP VIEW 3 3, 4 2 2 .040 1 1 4 .075 END VIEW SIDE VIEW .035 SUBSTRATE / CIRCUIT BOARD Dimensions / Marking: Length Width Height .075′ ′+ .003′ ′ .040′ ′+ .003′ ′ .035′ ′+ .003′ ′ Post 1 (Emitter) Post 2 (Base) Post 3,4 (Collector) .015′ ′x .010′ ′typ .015′ ′x .010′ ′typ .015′ ′x .012′ ′typ Marking on back of package : Yellow Diagonal over Emitter and Red Dot in Center (post down configuration) Standard In-Process Screening Requirements: Ø Semiconductor die and Micro-LID package visual inspection Ø Wire pull test Ø 24 hour stabilization bake at 150°C Ø 10 temperature cycles from –55°C to 125°C Ø 100% electrical test of dc characteristics at 25°C Ø Final visual inspection ________________________________________________________________ 2/3 December 1997 www.microlid.com [email protected] Micro-LID Transistors LDTBFR90 and LDTBFR90T Electrical Characteristics (25°C Ambient) Parameter Symbol Min Typ Max Collector-Base Breakdown Ic = 10 uA, Ie = 0 BVcbo 20 -- -- V Collector-Emitter Breakdown* Ib = 0, Ic = 10 mA BVceo 15 -- -- V Emitter-Base Breakdown Ic = 0, Ie = 10 uA BVebo 2 -- -- V Collector-Base Cutoff Current Vcb = 10 V Icbo -- -- 50 nA DC Forward Current Gain* Ic = 14 mA, Vce = 10 V Hfe 40 -- -- Collector Capacitance Vcb = 10 V, Ie = 0 f = 1 MHz Cobo -- -- 1 pF Gain Bandwidth Product Ic = 14 mA, Vce = 10 V f = 500 MHz fT -- -- GHz Noise Figure Ic = 2 mA, Vce = 10 V f = 500 MHz NF -- 2.4 dB * Pulse test, pulse width < 300 usec, duty cycle < 2% 3/3 December 1997 5 -- Units