PRODUCT DATA Micro International, Inc PART NUMBER LDTBFW16A and LDTBFW16AT Micro-LID NPN Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com [email protected] Micro-LID Transistors LDTBFW16A and LDTBFW16AT Description: The LDTBFW16A (untinned) and LDTBFW16AT (tinned) are NPN silicon 1.2 GHz wideband transistors in very small, rugged, surface mount, 4-post ceramic packages (Micro International manufactured package p/n 4-075-1). The LDTBFW16A and LDTBFW16AT meet the general specifications of the BFW16A transistor. The 4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier which can be provided with gold metallized or pre-tinned lands, and is approved for military, medical implant, sensor, and high reliability applications. The LDTBFW16A and LDTBFW16AT can be provided with special feature options such as additional temperature cycling, screening, and matching Hfe selection. Maximum Ratings: Parameter Symbol Rating Collector-Base Voltage Vcbo 40 V Collector-Emitter Voltage Vceo 25 V Emitter-Base Voltage Vebo 2V Collector Current Ic 150 mA Total Dissipation Pt 350 mW Operating Junction Temperature Tj 150°C Storage Temperature Tstg -65°C to 150°C Operating Temperature Toper -55°C to 125°C 1/3 December 1997 www.microlid.com [email protected] Micro-LID Transistors LDTBFW16A and LDTBFW16AT ______________________________________________________________________________________ Outline / Schematic: TOP VIEW 3 3, 4 2 2 .040 1 1 4 .075 END VIEW SIDE VIEW .035 SUBSTRATE / CIRCUIT BOARD Dimensions / Marking: Length Width Height .075′ ′+ .003′ ′ .040′ ′+ .003′ ′ .035′ ′+ .003′ ′ Post 1 (Emitter) Post 2 (Base) Post 3,4 (Collector) .015′ ′x .010′ ′typ .015′ ′x .010′ ′typ .015′ ′x .012′ ′typ Marking on back of package : Blue Stripe over Collector, Blue Dot over Emitter (post down configuration) and Red Dot in Center Standard In-Process Screening Requirements: Ø Semiconductor die and Micro-LID package visual inspection Ø Wire pull test Ø 24 hour stabilization bake at 150°C Ø 10 temperature cycles from –55°C to 125°C Ø 100% electrical test of dc characteristics at 25°C Ø Final visual inspection ________________________________________________________________ 2/3 December 1997 www.microlid.com [email protected] Micro-LID Transistors LDTBFW16A and LDTBFW16AT Electrical Characteristics (25°C Ambient) Parameter Symbol Min Typ Max Collector-Base Breakdown Ic = 100 uA, Ie = 0 BVcbo 40 -- -- V Collector-Emitter Breakdown* Ib = 0, Ic = 10 mA BVceo 25 -- -- V Emitter-Base Breakdown Ic = 0, Ie = 100 uA BVebo 2 -- -- V Collector-Base Cutoff Current Vcb = 20 V Icbo -- -- 50 nA DC Forward Current Gain* Ic = 50 mA, Vce = 5 V Ic = 150 mA, Vce = 5 V Hfe 25 25 --- --- Vce (sat) -- -- 1 V Collector Capacitance Vcb = 15 V, Ie = 0 f = 1 MHz Cobo -- -- 4 pF Gain Bandwidth Product Ic = 150 mA, Vce = 15 V f = 500 MHz fT -- 1.2 -- GHz Noise Figure Ic = 50 mA, Vce = 10 V f = 500 MHz NF -- -- 3.3 dB Collector-Emitter Saturation Ic = 100 mA, Ib = 10 mA * Pulse test, pulse width < 300 usec, duty cycle < 2% 3/3 December 1997 Units