PRODUCT DATA Micro International, Inc PART NUMBER LDT2369A and LDT2369AT Micro-LID NPN Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com [email protected] Micro-LID Transistors LDT2369A and LDT2369AT Description: The LDT2369A (untinned) and LDT2369AT (tinned) are NPN silicon transistors in very small, rugged, surface mount, 4-post ceramic packages (Micro International manufactured package p/n 4-075-1). The LDT2369A and LDT2369AT meet the general specifications of the 2N2369A transistor. The 4-075-1 Micro-LID package is a 4-post, leadless ceramic carrier which can be provided with gold metallized or pre-tinned lands, and is approved for military, medical implant, sensor, and high reliability applications. The LDT2369A and LDT2369AT can be provided with special feature options such as additional temperature cycling and screening. Maximum Ratings: Parameter Symbol Rating Collector-Base Voltage Vcbo 40 V Collector-Emitter Voltage Vceo 15 V Emitter-Base Voltage Vebo 4.5 V Collector Current Ic 200 mA Total Dissipation Pt 350 mW Operating Junction Temperature Tj 150°C Storage Temperature Tstg -65°C to 150°C Operating Temperature Toper -55°C to 125°C 1/3 January 1997 www.microlid.com [email protected] Micro-LID Transistors LDT2369A and LDT2369AT ______________________________________________________________________________________ Outline / Schematic: TOP VIEW 3 3, 4 2 2 .040 1 1 4 .075 END VIEW SIDE VIEW .035 SUBSTRATE / CIRCUIT BOARD Dimensions / Marking: Length Width Height .075′ ′+ .003′ ′ .040′ ′+ .003′ ′ .035′ ′+ .003′ ′ Post 1 (Emitter) Post 2 (Base) Post 3,4 (Collector) .015′ ′x .010′ ′typ .015′ ′x .010′ ′typ .015′ ′x .012′ ′typ Marking on back of package : Yellow Dot over Emitter and Red Dot in Center (post down configuration) Standard In-Process Screening Requirements: Ø Semiconductor die and Micro-LID package visual inspection Ø Wire pull test Ø 24 hour stabilization bake at 150°C Ø 10 temperature cycles from –55°C to 125°C Ø 100% electrical test of dc characteristics at 25°C Ø Final visual inspection ________________________________________________________________ 2/3 January 1997 www.microlid.com [email protected] Micro-LID Transistors LDT2369A and LDT2369AT Electrical Characteristics (25°C Ambient) Parameter Symbol Min Typ Max Collector-Base Breakdown Ic = 10 uA, Ie = 0 BVcbo 40 -- -- V Collector-Emitter Breakdown* Ib = 0, Ic = 10 mA BVceo 15 -- -- V Emitter-Base Breakdown Ic = 0, Ie = 10 uA BVebo 4.5 -- -- V Collector-Base Cutoff Current Vcb = 20 V Icbo -- -- 500 DC Forward Current Gain* Ic = 10 mA, Vce =1 V Hfe 40 -- 120 Collector-Emitter Saturation Ic = 10 mA, Ib = 1 mA Vce (sat) -- -- .3 V Base-Emitter Saturation Ic =10 mA, Ib = 1 mA Vbe (sat) -- -- .9 V Collector Capacitance Vcb = 10 V, Ie = 0 f = 1 MHz Cobo -- -- 4 pF * Pulse test, pulse width < 300 usec, duty cycle < 2% 3/3 January 1997 Units nA