PHILIPS PEMD2

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PEMD2
NPN/PNP resistor-equipped
transistors; R1 = 22 kΩ, R2 = 22 kΩ
Preliminary specification
2001 Sep 27
Philips Semiconductors
Preliminary specification
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
FEATURES
PEMD2
QUICK REFERENCE DATA
• 300 mW total power dissipation
SYMBOL
• Very small 1.6 mm x 1.2 mm ultra thin package
VCEO
collector-emitter voltage
50
V
ICM
peak collector current
100
mA
TR1
NPN
−
−
TR2
PNP
−
−
R1
bias resistor
22
kΩ
R2
bias resistor
22
kΩ
• Self alignment during soldering due to straight leads
• Replaces two SC-75/SC-89 packaged transistors on
same PCB area
• Reduces required PCB area
• Reduced pick and place costs.
PARAMETER
MAX.
UNIT
PINNING
APPLICATIONS
• General purpose switching and amplification
PIN
• Inverter and interface circuits
1, 4
emitter
TR1; TR2
• Circuit driver.
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
DESCRIPTION
DESCRIPTION
NPN/PNP resistor-equipped transistors in a SOT666
plastic package.
handbook, halfpage
6
6
5
5
R1
MARKING
TYPE NUMBER
PEMD2
4
4
R2
TR2
TR1
MARKING CODE
R2
D4
1
2
3
1
2
Simplified outline (SOT666) and symbol.
2, 5
6, 3
1, 4
MBK120
Fig.2 Equivalent inverter symbol.
2001 Sep 27
2
3
MAM448
Top view
Fig.1
R1
Philips Semiconductors
Preliminary specification
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
PEMD2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
−
50
V
VCEO
collector-emitter voltage
open base
−
50
V
VEBO
emitter-base voltage
open collector
−
10
V
VI
input voltage TR1
positive
−
+40
V
negative
−
−10
V
input voltage TR2
positive
−
+10
V
negative
−
−40
V
−
100
mA
IO
output current (DC)
ICM
peak collector current
Ptot
total power dissipation
Tstg
−
100
mA
−
200
mW
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
−
300
mW
Tamb ≤ 25 °C; note 1
Per device
total power dissipation
Ptot
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
notes 1 and 2
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Sep 27
3
VALUE
UNIT
416
K/W
Philips Semiconductors
Preliminary specification
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
PEMD2
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off current
ICEO
collector-emitter cut-off current
VCB = 50 V; IE = 0
−
−
100
nA
VCE = 50 V; IB = 0
−
−
1
µA
VCE = 30 V; IB = 0; Tj = 150 °C
−
−
50
µA
µA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
180
hFE
DC current gain
VCE = 5 V; IC = 5 mA
60
−
−
VCEsat
saturation voltage
IC = 10 mA; IB = 0.5 mA
−
−
150
mV
Vi(off)
input off voltage
VCE = 5 V; IC = 100 µA
−
1.1
0.8
V
Vi(on)
input on voltage
VCE = 0.3 V; IC = 5 mA
2.5
1.7
−
V
R1
input resistor
15.4
22
28.6
kΩ
R2
-------R1
resistor ratio
0.8
1
1.2
Cc
collector capacitance
−
−
2.5
pF
−
−
3
pF
TR1 (NPN)
IE = ie = 0; VCB = 10 V;
f = 1 MHz
TR2 (PNP)
2001 Sep 27
4
Philips Semiconductors
Preliminary specification
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
PEMD2
MGW361
103
handbook, halfpage
MGW360
1
handbook, halfpage
h FE
VCEsat
(1)
(V)
(3)
102
(2)
10 −1
(1)
10
(3)
1
10 −1
1
10
I C (mA)
10 −2
10 −1
102
TR1 (NPN); VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
TR1 (NPN); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.3
Fig.4
DC current gain as a function of collector
current; typical values.
MGW363
10
1
(2)
10
I C (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
MGW362
102
handbook, halfpage
handbook, halfpage
102
Vi(on)
Vi(off)
(V)
(V)
10
(1)
(1)
(2)
1
(2)
(3)
(3)
1
10 −1
10 −2
10 −1
1
I C (mA)
10 −1
10 −1
10
TR1 (NPN); VCE = 5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
TR1 (NPN); VCE = 0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5
Fig.6
Input-off voltage as a function of collector
current; typical values.
2001 Sep 27
5
1
10
I C (mA)
102
Input-on voltage as a function of collector
current; typical values.
Philips Semiconductors
Preliminary specification
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
PEMD2
MGW365
103
handbook, halfpage
MGW364
−1
handbook, halfpage
h FE
VCEsat
(1)
(V)
102
(3)
(2)
−10 −1
(1)
10
(3)
1
−10 −1
−1
−10
I C (mA)
−10 −2
−10 −1
−102
TR2 (PNP); VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
TR2 (PNP); IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig.7
Fig.8
DC current gain as a function of collector
current; typical values.
MGW367
−10
−1
(2)
−10
I C (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
MGW366
−102
handbook, halfpage
handbook, halfpage
−102
Vi(on)
Vi(off)
(V)
(V)
−10
(1)
−1
(1)
(2)
(2)
(3)
(3)
−1
−10 −1
−10 −2
−10 −1
−1
I C (mA)
−10 −1
−10 −1
−10
−1
−10
I C (mA)
−102
TR2 (PNP); VCE = −5 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
TR2 (PNP); VCE = −0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.9
Fig.10 Input-on voltage as a function of collector
current; typical values.
Input-off voltage as a function of collector
current; typical values.
2001 Sep 27
6
Philips Semiconductors
Preliminary specification
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
PEMD2
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
E
A
X
Y S
S
HE
6
5
4
pin 1 index
A
1
2
e1
c
3
bp
w M A
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
01-01-04
01-08-27
SOT666
2001 Sep 27
EUROPEAN
PROJECTION
7
Philips Semiconductors
Preliminary specification
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
PEMD2
DATA SHEET STATUS
DATA SHEET STATUS(1)
PRODUCT
STATUS(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2001 Sep 27
8
Philips Semiconductors
Preliminary specification
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
NOTES
2001 Sep 27
9
PEMD2
Philips Semiconductors
Preliminary specification
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
NOTES
2001 Sep 27
10
PEMD2
Philips Semiconductors
Preliminary specification
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 22 kΩ
NOTES
2001 Sep 27
11
PEMD2
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
© Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp12
Date of release: 2001
Sep 27
Document order number:
9397 750 08615