DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMD3 NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 2001 Sep 13 2001 Nov 07 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ FEATURES PEMD3 QUICK REFERENCE DATA • 300 mW total power dissipation SYMBOL • Very small 1.6 mm x 1.2 mm ultra thin package VCEO collector-emitter voltage 50 V ICM peak collector current 100 mA TR1 NPN − − TR2 PNP − − R1 bias resistor 10 kΩ R2 bias resistor 10 kΩ • Excellent coplanarity due to straight leads • Replaces two SC-75/SC-89 packaged transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. PARAMETER MAX. UNIT PINNING APPLICATIONS • General purpose switching and amplification PIN • Inverter and interface circuits 1, 4 emitter TR1; TR2 • Circuit driver. 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 DESCRIPTION DESCRIPTION NPN/PNP resistor-equipped transistors in a SOT666 plastic package. handbook, halfpage 6 6 5 5 R1 MARKING TYPE NUMBER PEMD3 4 4 R2 TR2 TR1 MARKING CODE R2 D3 1 2 3 1 2 Simplified outline (SOT666) and symbol. 2, 5 6, 3 1, 4 MBK120 Fig.2 Equivalent inverter symbol. 2001 Nov 07 2 3 MAM448 Top view Fig.1 R1 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ PEMD3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 10 V VI input voltage TR1 positive − +40 V negative − −10 V input voltage TR2 positive − +10 V negative − −40 V − 100 mA IO output current (DC) ICM peak collector current Ptot total power dissipation Tstg − 100 mA − 200 mW storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 300 mW Tamb ≤ 25 °C; note 1 Per device total power dissipation Ptot Tamb ≤ 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient notes 1 and 2 Notes 1. Transistor mounted on an FR4 printed-circuit board. 2. The only recommended soldering method is reflow soldering. 2001 Nov 07 3 VALUE UNIT 416 K/W Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ PEMD3 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO collector-base cut-off current ICEO collector-emitter cut-off current VCB = 50 V; IE = 0 − − 100 nA VCE = 50 V; IB = 0 − − 1 µA VCE = 30 V; IB = 0; Tj = 150 °C − − 50 µA µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 400 hFE DC current gain VCE = 5 V; IC = 5 mA 30 − − VCEsat saturation voltage IC = 10 mA; IB = 0.5 mA − − 150 mV Vi(off) input off voltage VCE = 5 V; IC = 100 µA − 1.1 0.8 V Vi(on) input on voltage VCE = 0.3 V; IC = 10 mA TR1 (NPN) 2.5 1.1 − V TR2 (PNP) 2.5 1.8 − V kΩ R1 input resistor 7 10 13 R2 -------R1 resistor ratio 0.8 1 1.2 Cc collector capacitance − − 2.5 pF − − 3 pF TR1 (NPN) IE = ie = 0; VCB = 10 V; f = 1 MHz TR2 (PNP) 2001 Nov 07 4 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ PEMD3 MGW369 103 handbook, halfpage MGW368 1 handbook, halfpage h FE VCEsat (1) 102 (3) (V) (2) 10 −1 (1) (2) 10 (3) 1 10 −1 1 10 I C (mA) 10 −2 1 102 10 TR1 (NPN); VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. TR1 (NPN); IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.3 Fig.4 DC current gain as a function of collector current; typical values. MGW371 10 Collector-emitter saturation voltage as a function of collector current; typical values. MGW370 102 handbook, halfpage handbook, halfpage 102 I C (mA) Vi(on) Vi(off) (V) (V) 10 (1) (1) (2) 1 (2) (3) (3) 1 10 −1 10 −2 10 −1 1 I C (mA) 10 −1 10 −1 10 TR1 (NPN); VCE = 5 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. TR1 (NPN); VCE = 0.3 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.5 Fig.6 Input-off voltage as a function of collector current; typical values. 2001 Nov 07 5 1 10 I C (mA) 102 Input-on voltage as a function of collector current; typical values. Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ PEMD3 MGW373 103 handbook, halfpage MGW372 −1 handbook, halfpage h FE VCEsat (1) 102 (3) (V) (2) −10 −1 (1) (2) 10 (3) 1 −10 −1 −1 −10 I C (mA) −10 −2 −1 −102 −10 TR2 (PNP); VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. TR2 (PNP); IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −40 °C. Fig.7 Fig.8 DC current gain as a function of collector current; typical values. MGW375 −10 Collector-emitter saturation voltage as a function of collector current; typical values. MGW374 −102 handbook, halfpage handbook, halfpage −102 I C (mA) Vi(on) Vi(off) (V) (V) −10 (1) −1 (1) (2) (3) (3) −1 −10 −1 −10 −2 −10 −1 −1 I C (mA) −10 −1 −10 −1 −10 −1 −10 (2) I C (mA) −102 TR2 (PNP); VCE = −5 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. TR2 (PNP); VCE = −0.3 V. (1) Tamb = −40 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.9 Fig.10 Input-on voltage as a function of collector current; typical values. Input-off voltage as a function of collector current; typical values. 2001 Nov 07 6 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ PEMD3 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 01-01-04 01-08-27 SOT666 2001 Nov 07 EUROPEAN PROJECTION 7 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ PEMD3 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2001 Nov 07 8 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ NOTES 2001 Nov 07 9 PEMD3 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ NOTES 2001 Nov 07 10 PEMD3 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ NOTES 2001 Nov 07 11 PEMD3 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA73 © Koninklijke Philips Electronics N.V. 2001 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/02/pp12 Date of release: 2001 Nov 07 Document order number: 9397 750 09046