Bulletin I25173 rev. B 03/94 ST303S SERIES Stud Version INVERTER GRADE THYRISTORS Features 300A All diffused design Center amplifying gate Guaranteed high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters ST303S Units 300 A 65 °C 471 A @ 50Hz 7950 A @ 60Hz 8320 A @ 50Hz 316 KA2s @ 60Hz 288 KA2s VDRM /VRRM 400 to 1200 V tq range (*) 10 to 30 µs - 40 to 125 °C IT(AV) @ TC IT(RMS) ITSM 2 It TJ case style TO-209AE (TO-118) (*) t = 10 to 20µs for 400 to 800V devices q t = 15 to 30µs for 1000 to 1200V devices q www.irf.com 1 ST303S Series Bulletin I25173 rev. B 03/94 ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM/V RRM, maximum VRSM , maximum I DRM/I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 400 500 Type number 04 ST303S 08 800 900 10 1000 1100 12 1200 1300 50 Current Carrying Capability ITM Frequency ITM ITM 180oel 180oel 50Hz 400Hz 670 480 470 330 1000Hz 230 2500Hz 35 Recovery voltage Vr Voltage before turn-on Vd 50 Units 100µs 1050 1021 940 710 5240 1800 4300 1270 140 760 470 730 430 - 150 - 90 - 50 50 50 50 V DRM V DRM 50 VDRM A V Rise of on-state current di/dt 50 50 - - - - A/µs Case temperature 40 65 40 65 40 65 °C Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF On-state Conduction Parameter IT(AV) Max. average on-state current @ Case temperature IT(RMS) Max. RMS on-state current ITSM ST303S Units 300 A 65 °C 471 Max. peak, one half cycle, 7950 non-repetitive surge current 8320 Maximum I2t for fusing DC @ 45°C case temperature A 2 reapplied t = 10ms 100% VRRM t = 8.3ms reapplied Sinusoidal half wave, 316 t = 10ms No voltage Initial TJ = TJ max 288 t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied KA2s 204 Maximum I2√t for fusing No voltage t = 8.3ms 7000 224 I 2 √t 180° conduction, half sine wave t = 10ms 6690 I 2t Conditions 3160 KA2 √s t = 0.1 to 10ms, no voltage reapplied www.irf.com ST303S Series Bulletin I25173 rev. B 03/94 On-state Conduction Parameter V TM ST303S Max. peak on-state voltage 2.16 V T(TO)1 Low level value of threshold 1.44 voltage V T(TO)2 High level value of threshold voltage 0.57 rt 2 High level value of forward slope resistance 0.56 IH Maximum holding current 600 IL Typical latching current 1000 Conditions ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse V (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x I T(AV)), TJ = TJ max. 1.46 Low level value of forward slope resistance rt 1 Units mΩ (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), T J = TJ max. mA T J = 25°C, I T > 30A T J = 25°C, VA = 12V, Ra = 6Ω, I G = 1A Switching Parameter di/dt ST303S Max. non-repetitive rate of rise 1000 of turned-on current t t Typical delay time d Conditions A/µs TJ = TJ max, VDRM = rated VDRM Min 10 Max 30 ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp = 1µs 0.80 Max. turn-off time (*) q Units µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 550A, commutating di/dt = 40A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code (*) t = 10 to 20µs for 400 to 800V devices; t = 15 to 30µs for 1000 to 1200V devices. q q Blocking Parameter ST303S Units Conditions TJ = TJ max, linear to 80% VDRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 50 mA ST303S Units TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -V GM Maximum peak negative gate voltage 5 IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger W T J = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V T J = TJ max, tp ≤ 5ms 200 mA 3 V T J = 25°C, V A = 12V, Ra = 6Ω IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V www.irf.com Conditions 60 T J = TJ max, rated VDRM applied 3 ST303S Series Bulletin I25173 rev. B 03/94 Thermal and Mechanical Specifications Parameter ST303S Units TJ Max. junction operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJC Max. thermal resistance, junction to case 0.10 RthCS Max. thermal resistance, case to heatsink 0.03 T Mounting torque, ± 10% 48.5 Nm (425) (Ibf-in) 535 g wt Approximate weight Case style Conditions °C DC operation K/W TO-209AE (TO-118) Mounting surface, smooth, flat and greased Non lubricated threads See Outline Table ∆RthJC Conduction (The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units 180° 0.011 0.008 120° 0.013 0.014 90° 0.017 0.018 60° 0.025 0.026 30° 0.041 0.042 Conditions T J = TJ max. K/W Ordering Information Table Device Code ST 30 3 S 12 P F N 0 1 2 3 4 5 6 7 8 9 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - S = Compression bonding Stud 5 - Voltage code: Code x 100 = VRRM (See Voltage Ratings table) 6 - P = Stud base 3/4" 16UNF-2A 7 - Reapplied dv/dt code (for tq test condition) 8 - tq code 9 - 0 = Eyelet terminals (Gate and Aux. Cathode Leads) 10 M = Stud base metric threads M24 x 1.5 1 = Fast-on terminals (Gate and Aux. Cathode Leads) 3 = Threaded top terminal 3/8" 24UNF-2A 10 - Critical dv/dt: None = 500V/µsec (Standard value) L = 1000V/µsec (Special selection) dv/dt - tq combinations available dv/dt (V/µs) 20 10 CN q 12 CM up to 800V 15 CL 20 CK 50 DN DM DL DK 100 EN EM EL EK 200 FN * FM FL * FK * 400 HN HM HL HK t (µs) -DP DK DJ DH --EK EJ EH --FK * FJ * FH --HK HJ HH t (µs) q only for 1000/1200V 15 18 20 25 30 CL CP CK CJ -- *Standard part number. All other types available only on request. 4 www.irf.com ST303S Series Bulletin I25173 rev. B 03/94 Outline Table CERAMIC HOUSING 22 (0.87) MAX. 4.5 (0.18) MAX. MI N. 9 .5 (0 . 37 ) MIN . 4.3 (0.17) DIA. WHITE GATE RED SILICON RUBBER 245 (9.65) ± 10 (0.39) FLEXIBLE LEAD RED CATHODE C.S. 50mm 2 (0.078 s.i.) Fast-on Terminals AMP. 280000-1 REF-250 47 (1.85) MAX. RED SHRINK 21 (0.82) MAX. 245 (9.65) WHITE SHRINK MAX. 27.5 (1.08) 255 (10.04) 38 (1.50) MAX. DIA. 22 ( 0.8 6) 10.5 (0.41) NOM. SW 45 Case Style TO-209AE (TO-118) 3/4"16 UNF-2A All dimensions in millimeters (inches) 49 (1.92) MAX. * FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX. CERAMIC HOUSING 17 (0.67) DIA. 25 (0.98) 3/8"-24UNF-2A 80.5 (3.17) MAX. 27.5 (1.08) All dimensions in millimeters (inches) MAX. 47 (1.85) 21 (0.83) Case Style TO-209AE (TO-118) with top thread terminal 3/8" MAX. 77.5 (3.05) 38 (1.5) DIA. MAX. SW 45 3/4"-16UNF-2A * * FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX. www.irf.com 5 ST303S Series Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Bulletin I25173 rev. B 03/94 130 ST303S Series R thJC (DC) = 0.10 K/W 120 110 100 Conduction Angle 90 30° 60° 80 90° 120° 70 180° 60 0 50 100 150 200 250 300 350 130 ST303S Series R (DC) = 0.10 K/W 120 thJC 110 100 Conduction Period 90 80 70 30° 60° 60 90° 120° 50 0 100 200 300 DC 400 500 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 600 01 0. K/ /W 2K /W 0. 1 6K /W 0.2 K /W 0. 3 K/W W 0.5 K/ R 100 ST303S Series TJ = 125°C ta el -D Conduction Angle = 200 A K/ W 08 K 0.1 RMS Limit 300 W K/ 400 0.0 6 0. S R th 180° 120° 90° 60° 30° 500 03 0. Maximum Average On-state Power Loss (W) 180° 40 W 0 0 50 100 150 200 250 300 25 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Maximum Average On-state Power Loss (W) Fig. 3 - On-state Power Loss Characteristics 900 DC 180° 120° 90° 60° 30° 800 700 600 R th S A = 0. 03 01 K/ K/ W W 0.0 -D 6K e lt /W a R 0. 1 2K /W 0. 500 400 RMS Limit 300 200 Conduction Period ST303S Series TJ = 125°C 100 0. 2 K /W 0.3 K /W 0 .5 K /W 0 0 25 50 100 150 200 250 300 350 400 450 500 Average On-state Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-state Power Loss Characteristics 6 www.irf.com ST303S Series Bulletin I25173 rev. B 03/94 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 6500 6000 5500 5000 4500 4000 ST303S Series 3500 3000 1 10 8000 Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 7000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 7000 Initial TJ = 125°C No Voltage Reapplied 6500 Rated VRRM Reapplied 6000 7500 5500 5000 4500 4000 ST303S Series 3500 3000 0.01 100 Fig. 5 - Maximum Non-repetitive Surge Current 1000 TJ = 25°C TJ = 125°C ST303S Series 100 1 2 3 4 5 6 7 8 1 Steady State Value R thJC = 0.10 K/W (DC Operation) 0.1 0.01 ST303S Series 0.001 0.001 I 280 260 TM = 500 A 300 A 200 A 100 A 50 A 240 220 200 180 160 ST303S Series TJ = 125 °C 140 120 100 80 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 9 - Reverse Recovered Charge Characteristics www.irf.com 0.1 1 10 Fig. 8 - Thermal Impedance ZthJC Characteristic Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Charge - Qrr (µC) Fig. 7 - On-state Voltage Drop Characteristics 300 0.01 Square Wave Pulse Duration (s) Instantaneous On-state Voltage (V) 320 1 Fig. 6 - Maximum Non-repetitive Surge Current Transient Thermal Impedance Z thJC (K/W) Instantaneous On-state Current (A) 10000 0.1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) 180 I TM 160 140 = 500 A 300 A 200 A 100 A 50 A 120 100 80 ST303S Series TJ = 125 °C 60 40 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/dt (A/µs) Fig. 10 - Reverse Recovery Current Characteristics 7 ST303S Series Bulletin I25173 rev. B 03/94 Peak On-state Current (A) 1E4 1000 1E3 400 200 500 50 Hz 400 200 500 100 50 Hz 1000 1500 Snubber circuit R s = 10 ohms Cs = 0.47 µF V D = 80% V DRM 2000 1E2 100 2500 ST303S Series Sinusoidal pulse TC = 40°C tp 1E1 1E1 1E2 Snubber circuit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 1500 1E1 1E41E1 1E4 1E3 ST303S Series Sinusoidal pulse TC = 65°C tp 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics Peak On-state Current (A) 1E4 1E3 500 400 200 100 50 Hz 400 Snubber circuit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 2000 1000 Snubber circuit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 1500 2500 1E1 ST303S Series Trapezoidal pulse TC = 40°C di/dt = 50A/µs 1E0 1E1 1E2 50 Hz 500 1000 1500 1E2 100 200 1E1 1E41E1 1E4 1E3 2000 ST303S Series Trapezoidal pulse TC = 65°C di/dt = 50A/µs 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics Peak On-state Current (A) 1E4 1E3 400 100 200 50 Hz 500 400 Snubber circuit R s = 10 ohms C s = 0.47 µF V D = 80% V DRM 1500 2000 1E1 50 Hz 1000 Snubber circuit R s = 10 ohms C s = 0.47 µF V D = 80% V DRM 1500 2500 1E2 2000 ST303S Series Trapezoidal pulse TC = 40°C di/dt = 100A/µs tp 1E0 1E1 100 500 1000 1E2 200 1E3 ST303S Series Trapezoidal pulse TC = 65°C di/dt = 100A/µs tp 1E1 1E41E1 1E4 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics 8 www.irf.com ST303S Series Bulletin I25173 rev. B 03/94 ST303S Series Rectangular pulse di/dt = 50A/µs tp 1E4 20 joules per pulse 3 5 10 20 joules per pulse 10 2 1 1E3 5 3 2 0.5 1 0.4 0.5 1E2 0.4 ST303S Series Sinusoidal pulse tp 1E1 1E1 1E2 1E1 1E41E1 1E4 1E3 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-state Energy Power Loss Characteristics 100 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms 10 tr<=1 µs (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, tp = 20ms tp = 10ms tp = 5ms tp = 3.3ms (a) (b) Tj=25 °C 1 Tj=-40 °C Tj=125 °C Instantaneous Gate Voltage (V) Peak On-state Current (A) 1E5 (1) (2) (3) (4) VGD IGD 0.1 0.001 0.01 Device: ST303S Series 0.1 Frequency Limited by PG(AV) 1 10 100 Instantaneous Gate Current (A) Fig. 15 - Gate Characteristics www.irf.com 9