STTA312B ® TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) 3A VRRM 1200 V trr (typ) 65 ns VF (max) 1.7 V K FEATURES AND BENEFITS SPECIFIC TO THE FOLLOWING OPERATIONS : SNUBBING OR CLAMPING, DEMAGNETIZATION AND RECTIFICATION ULTRA-FAST, SOFT RECOVERY VERY LOW OVERALL POWER LOSSES AND PARTICULARY LOW FORWARD VOLTAGE HIGH FREQUENCY OPERATION HIGH REVERSE VOLTAGE CAPABILITY A NC DPAK DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all "freewheel mode" operations. They are particularly suitable in motor control circuitries, or in primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for the secondary of SMPS as high voltage rectifier diodes. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 1200 V VRSM Non repetitive peak reverse voltage 1200 V IF(RMS) RMS forward current 6 A IFRM Repetitive peak forward current tp = 5 µs F = 5kHz square 35 A IFSM Surge non repetitive forward current tp = 10ms sinusoidal 25 A Tstg Storage temperature range - 65 to + 150 °C 125 °C Tj Maximum operating junction temperature TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 4A 1/8 STTA312B THERMAL AND POWER DATA Symbol Parameter Rth (j-c) Junction to case thermal resistance P1 Pmax Tests conditions Value Unit 6.5 °C/W Conduction power dissipation IF(AV) = 3A, δ = 0.5 Tc = 80°C 6.7 W Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) Tc = 76°C 7.5 W STATIC ELECTRICAL CHARACTERISTICS Symbol VF ** IR * Vto rd Test pulses : Parameter Tests conditions Forward voltage drop Reverse leakage current Threshold voltage IF = 3 A Tj = 25°C IF = 3 A Tj = 125°C VR = 0.8 X VRRM Tj = 25°C Ip < 3.IAV Tj = 125°C Min. Typ. 1.15 Tj = 125°C 150 Dynamic resistance Max. Unit 1.8 V 1.7 20 µA 400 µA 1.15 V 185 mΩ * tp = 380 µs, δ < 2% ** tp = 5 ms , δ < 2% To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol Parameter trr IRM S factor Test conditions Tj = 25°C Maximum recovery current Softness factor Min. Typ. Max. Unit 65 IF= 0.5A IR=1A Irr= 0.25A IF= 1A dIF/dt= 50A/µs VR= 30V Tj = 125°C IF= 3A VR= 600V dIF/dt = -16A/µs dIF/dt = -50A/µs Tj = 125°C ns 115 A 3.6 6.0 IF= 3A VR= 600V dIF/dt = -50A/µs 1.2 - TURN-ON SWITCHING Symbol Parameter tfr Forward recovery time VFP Peak forward voltage 2/8 Test conditions Tj = 25°C IF=3A dIF/dt = 16A/µs Measured at 1.1 x VFmax Min. Typ. Max. Unit 900 ns 35 V STTA312B Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current (maximum values). IFM(A) P1(W) 3E+1 8 7 δ = 0.2 δ = 0.1 δ = 0.5 1E+1 6 5 Tj=125°C 1E+0 δ=1 4 3 1E-1 2 1 Tj=25°C IF(av) (A) 0 0.0 0.5 1.0 1.5 VFM(V) 2.0 2.5 3.0 3.5 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. 1E-2 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) Zth(j-c)/Rth(j-c) 14 1.0 VR=600V Tj=125°C 12 0.8 IF=2*IF(av) 10 δ = 0.5 0.6 8 0.4 δ = 0.1 0.2 IF=IF(av) 6 δ = 0.2 T 4 Single pulse δ=tp/T tp(s) 0.0 1E-3 1E-2 2 tp 1E-1 1E+0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). 0 dIF/dt(A/µs) 0 VR=600V Tj=125°C 400 IF=2*IF(av) 300 IF=IF(av) 200 dIF/dt(A/µs) 10 30 40 50 60 70 80 90 100 S factor 500 0 20 Fig. 6: Softness factor tb/ta versus dIF/dt (typical values). trr(ns) 600 100 10 20 30 40 50 60 70 80 90 100 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 IF<2*IF(av) VR=600V Tj=125°C dIF/dt(A/µs) 0 10 20 30 40 50 60 70 80 90 100 3/8 STTA312B Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference: Tj=125°C). Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence). VFP(V) 1.1 60 IF=IF(av) Tj=125°C 50 S factor 1.0 40 0.9 30 IRM 20 0.8 10 Tj(°C) 0.7 25 50 0 75 100 125 Fig. 9: Forward recovery time versus dIF/dt (90% confidence). tfr(ns) 1000 VFR=1.1*VF max. IF=IF(av) Tj=125°C 900 800 700 600 500 dIF/dt(A/µs) 400 4/8 0 20 40 60 80 100 dIF/dt(A/µs) 0 20 40 60 80 100 STTA312B APPLICATION DATA The 1200V TURBOSWITCHTM series has been designed to provide the lowest overall power losses in all frequency or high pulsed current operations. In such application (fig. A to D), the way of calculating the power losses is given below : TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 REVERSE LOSSES in the diode CONDUCTION LOSSES in the diode Watts SWITCHING LOSSES in the diode SWITCHING LOSSES in the diode due to the diode Fig. A : "FREEWHEEL MODE". SWITCHING TRANSISTOR DIODE: TURBOSWITCH IL VR t T F = 1/T = t/T LOAD 5/8 STTA312B APPLICATION DATA (Cont’d) Fig. B : SNUBBER DIODE. Fig. C : DEMAGNETIZING DIODE. PWM t T F = 1/T = t/T Fig. D : RECTIFIER DIODE. Fig. E : STATIC CHARACTERISTICS. Conduction losses : I P1 = Vt0 x IF(AV) + Rd x IF2(RMS) IF Rd Reverse losses : VR V IR 6/8 V tO VF P2 = VR x IR x (1 - δ) STTA312B APPLICATION DATA (Cont’d) Fig. F : TURN-OFF CHARACTERISTICS. Turn-on losses : (in the transistor, due to the diode) V IL VR × IRM 2 × (3+2 × S) F 6 x dIF ⁄ dt VR × IRM × IL ×(S + 2) × F + 2 × dIF ⁄ dt P5 = TRANSISTOR I t Turn-off losses : I dI F /dt DIODE P3 = ta tb V VR × IRM 2 × × S × F 6 x dIF ⁄ dt t dI R /dt I RM VR trr = ta + tb I dIF /dt = VR /L S = tb / ta Turn-off losses : with non negligible serial inductance RECTIFIER OPERATION ta tb V P3’ = t IRM VR × IRM 2 × S × F L × IRM 2 × F + 6 x dIF ⁄ dt 2 dI R /dt VR P3, P3’ and P5 are suitable for power MOSFET and IGBT trr = ta + tb S = tb/ta Fig. G : TURN-ON CHARACTERISTICS. IF I Fmax dI F /dt 0 Turn-on losses : P4 = 0.4 (VFP - VF) x IFmax x tfr x F t VF V Fp VF 1.1V F 0 tfr t 7/8 STTA312B PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. Millimeters Min. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Max 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0° 8° Inches Min. Max. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0° 8° FOOTPRINT DIMENSIONS (in millimeters) 6.7 6.7 6.7 3 1.6 1.6 2.3 Ordering type 2.3 Marking STTA312B A312 STTA312B-TR A312 Epoxy meets UL94,V0 Package Weight Base qty Delivery mode DPAK DPAK 0.3g 0.3g 75 2500 Tube Tape & reel Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8