STMICROELECTRONICS STTA3006CW

STTA3006CW/CP

TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODES
MAIN PRODUCT CHARACTERISTICS
IF(AV)
2 x 15A
VRRM
600V
A1
K
A2
trr (typ)
35ns
VF (max)
1.6V
FEATURES AND BENEFITS
SPECIFICTO ”FREEWHEEL MODE”OPERATIONS:
FREEWHEEL OR BOOSTER DIODE.
ULTRA-FAST AND SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY OPERATIONS.
A2
A2
K
K
A1
A1
TO-247
STTA3006CW
SOT93
STTA3006CP
DESCRIPTION
The TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH family, drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all ”freewheel mode” operations
and is particularly suitable and efficient in motor
control freewheelapplicationsand in booster diode
applications in power factor control circuitries.
Packaged either in TO-247 or SOT93, these 600V
devices are particularly intended for use on 240V
domestic mains.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
600
V
VRSM
Non repetitive peak reverse voltage
600
V
IF(RMS)
RMS forward current
30
A
IFRM
Repetitive peak forward current
tp = 5 µs F = 5kHz square
200
A
IFSM
Surge non repetitive forward current
tp=10 ms sinusoidal
230
A
150
°C
-65 to 150
°C
Tj
T stg
Maximum operating junction temperature
Storage temperature range
TM : TURBOSWITCH is a trademark of STMicroelectronics
November 1999 Ed : 4B
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STTA3006CW/CP
THERMAL AND POWER DATA
Symbol
Rth(j-c)
P1
Pmax
Parameter
Test conditions
Value
Unit
Junction to case
Per diode
Total
Coupling
1.9
1.0
0.1
°C/W
Conduction power dissipation
Per diode
IF(AV) = 30A δ =0.5
Tc= 110°C
20.5
W
Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
Per diode
Tc=105°C
22.5
W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Test conditions
Forward voltage drop
VF *
IR
Parameter
Reverse leakage current
**
Vto
Threshold voltage
rd
Dynamic resistance
Test pulse :
Typ
Max
Unit
Tj = 25°C
Tj = 125°C
1.3
1.8
1.6
V
V
VR =0.8 x
VRRM
Tj = 25°C
Tj = 125°C
2
100
5
µA
mA
Ip < 3.IAV
Tj = 125°C
1.06
V
177
mΩ
Max
Unit
IF =15A
Min
* tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS (per diode)
TURN-OFF SWITCHING
Symbol
trr
IRM
S factor
Parameter
Reverse
recovery time
Test conditions
Tj = 25°C
Irr = 0.25A
IF = 0.5 A IR = 1A
IF = 1A dIF/dt =-50A/µs VR = 30V
Maximum
Tj = 125°C VR = 400V
reverse recovery dIF/dt = -120 A/µs
dIF/dt = -500 A/µs
current
IF = 15A
Tj = 125°C VR = 400V
dIF/dt = -500 A/µs
IF = 15A
Softness factor
Min
Typ
ns
35
65
A
12.5
17.5
/
0.5
TURN-ON SWITCHING
Symbol
tfr
VFp
2/8
Parameter
Test conditions
Forward
recovery time
Tj = 25°C
IF = 15A, dIF/dt = 120 A/µs
measured at, 1.1 × VFmax
Peak forward
voltage
Tj = 25°C
IF = 15A, dIF/dt = 120 A/µs
Min
Typ
Max
Unit
ns
500
V
9
STTA3006CW/CP
Fig. 1: Conduction losses versus average current.
Fig. 2: Forward voltage drop versus forward
current (maximum values).
VFM(V)
P1(W)
25
δ = 0.1
200
δ = 0.5
δ = 0.2
Tj=125°C
100
20
δ= 1
15
10
10
T
5
IF(av) (A)
0
0
2
4
6
8
10
δ=tp/T
12
14
IFM(A)
tp
16
1
0.0
18
Fig. 3: Relative variation of thermal transient
impedance junction to case versus pulse duration.
K=
0.2
Zth(j-c) (tp, δ)
2.5
3.0
3.5
4.0
40
Rth(j-c)
VR=400V
Tj=125°C
35
δ = 0.5
IF=2*IF(av)
IF=IF(av)
25
20
δ = 0.2
IF=0.5*IF(av)
15
T
10
δ = 0.1
Single pulse
δ=tp/T
tp(s)
tp
5
0
0.0
1E-4
1E-3
1E-2
1E-1
1E+0
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence).
dIF/dt(A/µs)
0
100
200
300
400
500
600
700
800
900 1000
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical
values).
trr(ns)
200
180
160
140
120
100
80
60
40
20
0
2.0
45
30
0.4
1.5
IRM(A)
0.8
0.6
1.0
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence).
K
1.0
0.5
S factor
VR=400V
Tj=125°C
1.0
IF<2*IF(av)
VR=400V
Tj=125°C
0.8
IF=2*IF(av)
IF=IF(av)
0.6
0.4
IF=0.5*IF(av)
0.2
dIF/dt(A/µs)
dIF/dt(A/µs)
0
100
200
300
400
500
600
700
800
900 1000
0.0
0
100
200
300
400
500 600
700
800
900 1000
3/8
STTA3006CW/CP
Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125°C).
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence).
VFP(V)
1.1
25
Tj=125°C
1.0
20
S factor
IF=IF(av)
15
0.9
IRM
10
0.8
5
Tj(°C)
0.7
25
50
dIF/dt(A/µs)
75
100
125
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence).
tfr(ns)
300
VFR=1.1*VF max.
IF=IF(av)
250
Tj=125°C
200
150
100
dIF/dt(A/µs)
50
4/8
0
100
200
300
400
500
600
700
800
900 1000
0
0
100
200
300
400
500
600
700
800
900 1000
STTA3006CW/CP
APPLICATION DATA
The TURBOSWITCH is especially designed to
provide the lowest overall power losses in any
”FREEWHEEL
Mode”
application
(Fig.A)
considering both the diode and the companion
transistor, thus optimizing the overall performance
in the end application.
The way of calculating the power losses is given
below:
TOTAL LOSSES
due to the diode
P = P1+ P2+ P3+ P4+ P5
CONDUCTION
LOSSES
in the diode
REVERSE
LOSSES
in the diode
Watts
SWITCHING
LOSSES
in the diode
SWITCHING
LOSSES
in the tansistor
Fig. A : ”FREEWHEEL” MODE.
SWITCHING
TRANSISTOR
DIODE:
TURBOSWITCH
IL
VR
t
T
F = 1/T
= t/T
LOAD
5/8
STTA3006CW/CP
APPLICATION DATA (Cont’d)
Fig. B: STATIC CHARACTERISTICS
Conduction losses :
I
P1 = Vt0 . IF(AV) + Rd . IF2(RMS)
IF
Rd
VR
V
IR
V tO
VF
Reverse losses :
P2 = VR . IR . (1 - δ)
Fig. C: TURN-OFF CHARACTERISTICS
Turn-on losses :
(in the transistor, due to the diode)
V
IL
TRANSISTOR
I
VR × IRM 2 × ( 3 + 2 × S ) × F
6 x dIF ⁄ dt
VR × IRM × IL × ( S + 2 ) × F
+
2 x dIF ⁄ dt
P5 =
t
I
dI F /dt
DIODE
Turn-off losses (in the diode) :
ta tb
V
t
I RM
P3 =
dIR /dt
VR
trr = ta + tb
VR × IRM 2 × S × F
6 x dIF ⁄ dt
P3 and P5 are suitable for power MOSFET and
IGBT
S = tb / ta
Fig. C: TURN-ON CHARACTERISTICS
IF
I Fmax
dI F /dt
0
t
VF
V Fp
VF
1.1V F
0
6/8
tfr
t
Turn-on losses :
P4 = 0.4 (VFP - VF) . IFmax . tfr . F
STTA3006CW/CP
PACKAGE DATA
TO-247 Plastic
DIMENSIONS
REF.
Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
V
Dia.
V
A
H
L5
A
4.85
5.15 0.191
0.203
D
2.20
2.60 0.086
0.102
E
0.40
0.80 0.015
0.031
F
1.00
1.40 0.039
0.055
F1
3.00
0.118
F2
2.00
0.078
F3
2.00
2.40 0.078
0.094
F4
3.00
3.40 0.118
0.133
G
L
L2 L4
F2
F1
L1
F4
D
L3
M
G
=
15.45
15.75 0.608
0.620
L
19.85
20.15 0.781
0.793
L1
3.70
4.30 0.145
0.169
L3
F(x3)
=
E
0.429
H
L2
F3
V2
10.90
18.50
14.20
0.728
14.80 0.559
0.582
L4
34.60
1.362
L5
5.50
0.216
M
2.00
3.00 0.078
0.118
V
5°
5°
V2
60°
60°
Dia.
3.55
3.65 0.139
0.143
Cooling method : by conduction(C).
Recommended torque value : 0.8 m.N
Maximum torque value : 1 m.N
7/8
STTA3006CW/CP
PACKAGE DATA
SOT93 Plastic
DIMENSIONS
REF.
Millimeters
Inches
Min.
Typ. Max. Min.
Typ. Max.
A
4.70
4.90 1.185
0.193
C
1.90
2.10 0.075
0.083
D
2.50
0.098
D1
2.00
0.078
E
0.50
0.78 0.020
0.031
F
1.10
1.30 0.043
0.051
F3
1.75
0.069
F4
2.10
0.083
G
10.80
11.10 0.425
0.437
H
14.70
15.20 0.279
0.598
L
12.20
0.480
L2
16.20
0.638
L3
L5
18.0
3.95
L6
O
0.709
4.15 0.156
31.00
4.00
0.163
1.220
4.10 0.157
0.161
Cooling method : by conduction(C).
Recommended torque value : 0.8 m.N
Maximum torque value : 1 m.N
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STTA3006CW
STTA3006CW
TO247
4.36g
30
Tube
STTA3006CP
STTA3006CP
SOT93
3.97g
30
Tube
Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 1999 STMicroelectronics - Printed in Italy - All rights reserved.
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