ETC TPC6602

TPC6602
TOSHIBA Transistor Silicon PNP Epitaxial Type
TPC6602
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
Unit: mm
•
High DC current gain: hFE = 200 to 500 (IC = −0.2 A)
•
Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)
•
High-speed switching: tf = 25 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−20
V
Collector-emitter voltage
VCEO
−10
V
Emitter-base voltage
VEBO
−7
V
DC
IC
−2.0
Pulse
ICP
−3.5
IB
−200
PC
1.6
Collector current
Base current
t = 10 s
Collector power
dissipation
(Note)
DC
Junction temperature
Storage temperature range
A
mA
W
0.8
Tj
150
°C
Tstg
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-3T1
Weight: 0.011 g (typ.)
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645
2
mm )
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −20 V, IE = 0


−100
nA
Emitter cut-off current
IEBO
VEB = −7 V, IC = 0


−100
nA
V (BR) CEO
IC = −10 mA, IB = 0
−10


V
hFE (1)
VCE = −2 V, IC = −0.2 A
200

500
hFE (2)
VCE = −2 V, IC = −0.6 A
125


Collector-emitter saturation voltage
VCE (sat)
IC = −0.6 A, IB = −0.02 A


−0.19
V
Base-emitter saturation voltage
VBE (sat)
IC = −0.6 A, IB = −0.02 A


−1.10
V
VCB = −10 V, IE = 0, f = 1 MHz

12

pF
See Figure 1 circuit diagram.

50

VCC ∼
− −6 V, RL = 10 Ω

115

IB1 = −IB2 = −20 mA

25

Collector-emitter breakdown voltage
DC current gain
Collector output capacitance
Rise time
Switching time
Storage time
Fall time
Cob
tr
tstg
tf
1
ns
2002-03-18
TPC6602
Circuit Configuration
IB2
Input
IB1
IB1
6
4
H3B
Output
IB2
1
Duty cycle < 1%
Figure 1
5
RL
VCC
20 µs
Marking
2
3
Switching Time Test Circuit &
Timing Chart
2
2002-03-18
TPC6602
IC – VCE
hFE – IC
−2
10000
−60
−40
−20
hFE
−1.6
DC current gain
Collector current
IC
(A)
−80
−10
−1.2
−6
−0.8
−4
Common emitter
VCE = −2 V
Single pulse test
1000
Ta = 100°C
100
25
IB = −2 mA
−0.4
10
−0.001
Common emitter
Ta = 25°C
Single pulse test
0
0
−0.2
−0.4
−0.6
−0.8
−1
Collector-emitter voltage VCE
−0.01
Collector current
−1
IC
−10
(A)
(V)
VBE (sat) – IC
−10
Base-emitter saturation voltage
VBE (sat) (V)
Common emitter
IC/IB = 30
Single pulse test
−0.1
Ta = 100°C
−55
25
−0.01
−0.001
−0.001
−0.1
−1.2
VCE (sat) – IC
−1
Collector-emitter saturation voltage
VCE (sat) (V)
−55
−0.01
−0.1
Collector current
−1
IC
Common emitter
IC/IB = 30
Single pulse test
−55
Ta = 100°C
−0.1
−0.001
−10
(A)
25
−1
−0.01
−0.1
Collector current
−1
IC
−10
(A)
IC – VBE
Collector current
IC
(A)
−2
−1.6
Common emitter
VCE = −2 V
Single pulse test
−1.2
−0.8
−0.4
0
0
Ta = 100°C
−0.4
25
−55
−0.8
Base-emitter voltage VBE
−1.2
−1.6
(V)
3
2002-03-18
TPC6602
rth – tw
Transient thermal resistance
rth (j-a) (°C/W)
1000
100
10
Curves should be applied in thermal limited area.
Single pulse
Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick,
2
Cu area: 645 mm )
1
0.001
0.01
0.1
1
Pulse width
10
tw
100
1000
(s)
Safe Operating Area
−10
IC max (Pulse) *
10 ms* 1 ms*
100 ms*
−1
10 s*
DC operation
(Ta = 25°C)
−0.1
*: Single pulse Ta = 25°C
Note that the curves for 100 ms*,
10 s* and DC operation* will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
2
645 mm ). These characteristic
curves must be derated linearly
with increase in temperature.
−0.01
−0.1
−1
VCEO max
Collector current
IC
(A)
IC max (continuous)
−10
Collector-emitter voltage VCE
−100
(V)
4
2002-03-18
TPC6602
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
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2002-03-18