2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications DC-DC Converter Applications Unit: mm Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.2 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 25 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 7 V DC IC 2 Pulse ICP 3.5 IB 200 Collector current Base current DC Collector power dissipation t = 10 s Junction temperature Storage temperature range PC (Note) A 500 750 mA JEDEC ― mW JEITA ― TOSHIBA Tj 150 °C Tstg −55 to 150 °C 2-3S1C Weight: 0.01 g (typ.) Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 20 V, IE = 0 ⎯ ⎯ 100 nA Emitter cut-off current IEBO VEB = 7 V, IC = 0 ⎯ ⎯ 100 nA V (BR) CEO IC = 10 mA, IB = 0 10 ⎯ ⎯ V Collector-emitter breakdown voltage hFE (1) VCE = 2 V, IC = 0.2 A 400 ⎯ 1000 hFE (2) VCE = 2 V, IC = 0.6 A 200 ⎯ ⎯ Collector-emitter saturation voltage VCE (sat) IC = 0.6 A, IB = 12 mA ⎯ ⎯ 0.12 V Base-emitter saturation voltage VBE (sat) V DC current gain Rise time Switching time Storage time Fall time tr tstg tf IC = 0.6 A, IB = 12 mA ⎯ ⎯ 1.10 See Figure 1. ⎯ 60 ⎯ VCC ≈ 6 V, RL = 10 Ω ⎯ 215 ⎯ IB1 = −IB2 = 12 mA ⎯ 25 ⎯ 1 ns 2004-07-01 2SC5755 Marking VCC Part No. (or abbreviation code) IB1 Input IB1 RL 20 µs W Output L IB2 IB2 Duty cycle < 1% Figure 1 Lot code (year) Dot: even year No dot: odd year Switching Time Test Circuit & Timing Chart 2 Lot code (month) 2004-07-01 2SC5755 IC − VCE 2.4 40 60 30 20 3000 10 hFE 8 1.6 6 1.2 DC current gain IC (A) 2 Collector current hFE − IC 10000 4 0.8 IB = 2mA 0 0 0 0.2 0.4 0.6 0.8 Collector-emitter voltage 1.0 VCE 25 300 −55 100 Common emitter VCE = 2 V Single nonrepetitive pulse 30 Common emitter Ta = 25 °C Single nonrepetitive pulse 0.4 Ta = 100°C 1000 10 0.001 1.2 0.003 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) (V) VCE (sat) − IC VBE (sat) − IC 1 10 IC/IB = 50 0.3 Single nonrepetitive pulse Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) Common emitter 25 0.1 Ta = 100°C 0.03 −55 0.01 0.003 0.001 0.001 0.003 0.01 0.03 0.1 0.3 1 3 −55 1 Collector current IC (A) Ta = 100°C 0.1 Common emitter 0.03 0.01 0.001 3 25 0.3 IC/IB = 50 Single nonrepetitive pulse 0.003 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) IC – VBE Collector current IC (A) 2 Common emitter VCE = 2 V Single nonrepetitive pulse 1.6 1.2 0.8 Ta = 100°C 25 −55 0.4 0 0 0.4 0.8 Base-emitter voltage 1.2 VBE 1.6 (V) 3 2004-07-01 2SC5755 rth – tw Transient thermal resistance rth (j-a) (°C/W) 1000 300 100 30 10 Curves should be applied in thermal limited area. 3 Ta = 25°C Single nonrepetitive pulse Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 1 0.001 2 0.003 0.01 0.03 0.1 0.3 1 Pulse width 3 tw 10 30 100 300 1000 (s) Safe Operating Area 10 (A) IC max (pulsed)* 3 100 µs* IC max (continuous) 0.3 DC operation (Ta = 25°C) *: Single nonrepetitive pulse Ta = 25°C 0.1 Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t mounted on an FR4 0.03 board (glass epoxy, 1.62mm thick, Cu area: 645 mm ). These characteristic curves must be derated linearly with increase in temperature. 0.01 0.03 0.3 3 0.1 1 Collector-emitter voltage 10 ms* 100 ms* 10 s* VCEO max Collector current IC 1 ms* 1 10 VCE 30 100 (V) 4 2004-07-01 2SC5755 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-01