TOSHIBA 2SC5755

2SC5755
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5755
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
Unit: mm
·
High DC current gain: hFE = 400 to 1000 (IC = 0.2 A)
·
Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max)
·
High-speed switching: tf = 25 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
7
V
Collector current
DC
IC
2
Pulse
ICP
3.5
IB
200
Base current
DC
Collector power
dissipation
t = 10 s
Junction temperature
Storage temperature range
PC (Note)
A
500
750
mA
JEDEC
―
mW
JEITA
―
Tj
150
°C
Tstg
-55 to 150
°C
TOSHIBA
2-3S1C
Weight: 0.01 g (typ.)
Note: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
2
645 mm )
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 20 V, IE = 0
¾
¾
100
nA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
¾
¾
100
nA
V (BR) CEO
IC = 10 mA, IB = 0
10
¾
¾
V
hFE (1)
VCE = 2 V, IC = 0.2 A
400
¾
1000
hFE (2)
VCE = 2 V, IC = 0.6 A
200
¾
¾
Collector-emitter saturation voltage
VCE (sat)
IC = 0.6 A, IB = 12 mA
¾
¾
0.12
V
Base-emitter saturation voltage
VBE (sat)
IC = 0.6 A, IB = 12 mA
¾
¾
1.10
V
See Figure 1 circuit diagram.
¾
60
¾
VCC ≈ 6 V, RL = 10 W
¾
215
¾
IB1 = -IB2 = 12 mA
¾
25
¾
Collector-emitter breakdown voltage
DC current gain
Rise time
Switching time
Storage time
Fall time
tr
tstg
tf
1
ns
2002-07-22
2SC5755
Marking
VCC
IB1
Input
IB1
RL
20 ms
Output
WL
IB2
IB2
Duty cycle < 1%
Figure 1
Switching Time Test Circuit &
Timing Chart
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2SC5755
IC - VCE
2.4
40
60
hFE - IC
10000
30
2
hFE
8
1.6
6
1.2
DC current gain
IC
Collector current
3000
10
(A)
20
4
0.8
IB = 2mA
0
0
0
0.2
0.4
0.6
0.8
1.0
Collector-emitter voltage VCE
25
300
-55
100
Common emitter
VCE = 2 V
Single nonrepetitive pulse
30
Common emitter
Ta = 25 °C
Single nonrepetitive pulse
0.4
Ta = 100°C
1000
10
0.001
1.2
0.003
0.01
0.03
0.1
Collector current
(V)
VCE (sat) - IC
0.3
IC
1
3
(A)
VBE (sat) - IC
1
10
IC/IB = 50
0.3 Single nonrepetitive pulse
Base-emitter saturation voltage
VBE (sat) (V)
Collector-emitter saturation voltage
VCE (sat) (V)
Common emitter
25
0.1
Ta = 100°C
0.03
-55
0.01
0.003
0.001
0.001
0.003
0.01
0.03
0.1
Collector current
0.3
IC
1
3
-55
1
(A)
Ta = 100°C
0.1
Common emitter
0.03
0.01
0.001
3
25
0.3
IC/IB = 50
Single nonrepetitive pulse
0.003
0.01
0.03
0.1
Collector current
0.3
IC
1
3
(A)
IC – VBE
Collector current
IC
(A)
2
Common emitter
VCE = 2 V
Single nonrepetitive pulse
1.6
1.2
0.8
Ta = 100°C
25
0.4
0
0
0.4
-55
0.8
Base-emitter voltage VBE
1.2
1.6
(V)
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2SC5755
rth – tw
Transient thermal resistance
rth (j-a) (°C/W)
1000
300
100
30
10
Curves should be applied in thermal limited area.
3
Ta = 25°C
Single nonrepetitive pulse
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
1
0.001
0.003
0.01
0.03
0.1
0.3
1
Pulse width
3
tw
10
30
100
300
1000
(s)
Safe Operating Area
10
(A)
IC max (pulsed)*
3
100 ms*
IC max (continuous)
1
0.3
DC operation
(Ta = 25°C)
*: Single nonrepetitive pulse
Ta = 25°C
0.1 Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices
aren’t mounted on an FR4
0.03 board (glass epoxy, 1.62mm
thick, Cu area: 645 mm ).
These characteristic curves
must be derated linearly with
increase in temperature.
0.01
0.03
0.3
3
0.1
1
10 ms*
100 ms*
10 s*
VCEO max
Collector current IC
1 ms*
10
Collector-emitter voltage VCE
30
100
(V)
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2002-07-22
2SC5755
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
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2002-07-22