SLUS338A – JUNE 1993 – REVISED MAY 2001 FEATURES D Matched, Four-Diode Monolithic Array D High Peak Current D Low-Cost MINIDIP Package D Low-Forward Voltage D Parallelable for Lower VF or Higher IF D Fast Recovery Time D Military Temperature Range Available DESCRIPTION This four-diode array is designed for general purpose use as individual diodes or as a high-speed, high-current bridge. It is particularly useful on the outputs of high-speed power MOSFET drivers where Schottky diodes are needed to clamp any negative excursions caused by ringing on the driven line.These diodes are also ideally suited for use as voltage clamps when driving inductive loads such as relays and solenoids, and to provide a path for current free-wheeling in motor drive applications.The use of Schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time.This single monolithic chip is fabricated in both hermetic CERDIP and copper-eaded plastic packages. The UC1611 in ceramic is designed for –55°C to 125°C environments but with reduced peak current capability: while the UC3611 in plastic has higher current rating over a 0°C to 70°C ambient temperature range. AVAILABLE OPTIONS Packaged Devices TA = TJ SOIC Wide (DW) DIL (J) DIL (N) –55°C to 125°C UC1611DW UC1611J UC1611N 0°C to 70°C UC3611DW UC3611J UC3611N Copyright 2001, Texas Instruments Incorporated !"# $ % $ ! ! & ' $$ ()% $ ! * $ #) #$ * ## ! % www.ti.com 1 SLUS338A – JUNE 1993 – REVISED MAY 2001 DW PACKAGE (TOP VIEW) J OR N PACKAGE (TOP VIEW) absolute maximum ratings over operating free-air temperature (unless otherwise noted)† Peak inverse voltage (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Diode-to-diode voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 V Peak forward current UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A UC3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A Power dissipation at TA = 70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. ‡ Please consult packaging section of data book for thermal limitations and considerations of package. electrical characteristics, all specifications apply to each individual diode, TJ = 25°C, TA = TJ, (except as noted) PARAMETER TEST CONDITIONS MIN 0.3 TYP For ard voltage Forward oltage drop IF = 100 mA IF = 1 A Leakage current VR = 40 V VR = 40 V, Reverse recovery 0.5 A forward to 0.5 A reverse 20 Forward recovery 1 A forward to 1.1 V recovery 40 TJ = 100°C Junction capacitance MAX 0.7 V 0.9 1.2 V 0.01 0.1 mA 0.1 1.0 mA VR = 5V 100 NOTE: At forward currents of greater than 1.0 A, a parasitic current of approximately 10 mA may be collected by adjacent diodes. 2 www.ti.com UNITS 0.4 ns ns pF SLUS338A – JUNE 1993 – REVISED MAY 2001 APPLICATION INFORMATION REVERSE CURRENT vs VOLTAGE FORWARD CURRENT vs VOLTAGE 1000 5.0 500 3.0 2.0 1.0 T J = 125 °C 100 Forward Current – A Leakage Current – µA 300 200 50 30 20 10 5 0.3 0.2 T J = –55 °C 0.1 0.05 0.03 0.02 T J = 25 °C 0.01 T J = 25 °C T J = 75 °C 0.5 0.005 3 2 T J = 125 °C 0.003 0.002 0.001 1 0 10 20 30 40 50 Reverse Voltage – V 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Forward Voltage – V Figure 1 Figure 2 Figure 3. Clamp Diodes – PWMs and Drivers www.ti.com 3 SLUS338A – JUNE 1993 – REVISED MAY 2001 APPLICATION INFORMATION Figure 4. Transformer Coupled Drive Circuits Figure 5. Linear Regulations 4 www.ti.com IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgment, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its products to the specifications applicable at the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. Customers are responsible for their applications using TI components. In order to minimize risks associated with the customer’s applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such products or services might be or are used. TI’s publication of information regarding any third party’s products or services does not constitute TI’s approval, license, warranty or endorsement thereof. Reproduction of information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations and notices. Representation or reproduction of this information with alteration voids all warranties provided for an associated TI product or service, is an unfair and deceptive business practice, and TI is not responsible nor liable for any such use. Resale of TI’s products or services with statements different from or beyond the parameters stated by TI for that product or service voids all express and any implied warranties for the associated TI product or service, is an unfair and deceptive business practice, and TI is not responsible nor liable for any such use. Also see: Standard Terms and Conditions of Sale for Semiconductor Products. www.ti.com/sc/docs/stdterms.htm Mailing Address: Texas Instruments Post Office Box 655303 Dallas, Texas 75265 Copyright 2001, Texas Instruments Incorporated