SLUS338A – JUNE 1993 – REVISED MAY 2001 FEATURES D Matched, Four-Diode Monolithic Array D High Peak Current D Low-Cost MINIDIP Package D Low-Forward Voltage D Parallelable for Lower VF or Higher IF D Fast Recovery Time D Military Temperature Range Available DESCRIPTION This four-diode array is designed for general purpose use as individual diodes or as a high-speed, high-current bridge. It is particularly useful on the outputs of high-speed power MOSFET drivers where Schottky diodes are needed to clamp any negative excursions caused by ringing on the driven line.These diodes are also ideally suited for use as voltage clamps when driving inductive loads such as relays and solenoids, and to provide a path for current free-wheeling in motor drive applications.The use of Schottky diode technology features high efficiency through lowered forward voltage drop and decreased reverse recovery time.This single monolithic chip is fabricated in both hermetic CERDIP and copper-eaded plastic packages. The UC1611 in ceramic is designed for –55°C to 125°C environments but with reduced peak current capability: while the UC3611 in plastic has higher current rating over a 0°C to 70°C ambient temperature range. AVAILABLE OPTIONS Packaged Devices TA = TJ SOIC Wide (DW) DIL (J) DIL (N) –55°C to 125°C UC1611DW UC1611J UC1611N 0°C to 70°C UC3611DW UC3611J UC3611N Copyright 2001, Texas Instruments Incorporated !"# $ % $ ! ! & ' $$ ()% $ ! * $ #) #$ * ## ! % www.ti.com 1 SLUS338A – JUNE 1993 – REVISED MAY 2001 DW PACKAGE (TOP VIEW) J OR N PACKAGE (TOP VIEW) absolute maximum ratings over operating free-air temperature (unless otherwise noted)† Peak inverse voltage (per diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 V Diode-to-diode voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80 V Peak forward current UC1611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 A UC3611 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 A Power dissipation at TA = 70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 W Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to 150°C Lead temperature (soldering, 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. ‡ Please consult packaging section of data book for thermal limitations and considerations of package. electrical characteristics, all specifications apply to each individual diode, TJ = 25°C, TA = TJ, (except as noted) PARAMETER TEST CONDITIONS MIN 0.3 TYP For ard voltage Forward oltage drop IF = 100 mA IF = 1 A Leakage current VR = 40 V VR = 40 V, Reverse recovery 0.5 A forward to 0.5 A reverse 20 Forward recovery 1 A forward to 1.1 V recovery 40 TJ = 100°C Junction capacitance MAX 0.7 V 0.9 1.2 V 0.01 0.1 mA 0.1 1.0 mA VR = 5V 100 NOTE: At forward currents of greater than 1.0 A, a parasitic current of approximately 10 mA may be collected by adjacent diodes. 2 www.ti.com UNITS 0.4 ns ns pF SLUS338A – JUNE 1993 – REVISED MAY 2001 APPLICATION INFORMATION REVERSE CURRENT vs VOLTAGE FORWARD CURRENT vs VOLTAGE 1000 5.0 500 3.0 2.0 1.0 T J = 125 °C 100 Forward Current – A Leakage Current – µA 300 200 50 30 20 10 5 0.3 0.2 T J = –55 °C 0.1 0.05 0.03 0.02 T J = 25 °C 0.01 T J = 25 °C T J = 75 °C 0.5 0.005 3 2 T J = 125 °C 0.003 0.002 0.001 1 0 10 20 30 40 50 Reverse Voltage – V 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Forward Voltage – V Figure 1 Figure 2 Figure 3. Clamp Diodes – PWMs and Drivers www.ti.com 3 SLUS338A – JUNE 1993 – REVISED MAY 2001 APPLICATION INFORMATION Figure 4. Transformer Coupled Drive Circuits Figure 5. Linear Regulations 4 www.ti.com PACKAGE OPTION ADDENDUM www.ti.com 25-Sep-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) 5962-90538012A ACTIVE LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type -55 to 125 596290538012A UC1611L/ 883B 5962-9053801PA ACTIVE CDIP JG 8 1 TBD A42 N / A for Pkg Type -55 to 125 9053801PA UC1611 5962-9053801V2A ACTIVE LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type -55 to 125 59629053801V2A UC1611L QMLV 5962-9053801VPA ACTIVE CDIP JG 8 1 TBD A42 N / A for Pkg Type -55 to 125 9053801VPA UC1611 UC1611J ACTIVE CDIP JG 8 1 TBD A42 N / A for Pkg Type -55 to 125 UC1611J UC1611J883B ACTIVE CDIP JG 8 1 TBD A42 N / A for Pkg Type -55 to 125 9053801PA UC1611 UC1611L883B ACTIVE LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type -55 to 125 596290538012A UC1611L/ 883B UC3611DW ACTIVE SOIC DW 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR 0 to 70 UC3611DW UC3611DWG4 ACTIVE SOIC DW 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR 0 to 70 UC3611DW UC3611J ACTIVE CDIP JG 8 1 TBD A42 N / A for Pkg Type 0 to 70 UC3611J UC3611N ACTIVE PDIP P 8 50 Green (RoHS & no Sb/Br) CU NIPDAU N / A for Pkg Type 0 to 70 UC3611N UC3611NG4 ACTIVE PDIP P 8 50 Green (RoHS & no Sb/Br) CU NIPDAU N / A for Pkg Type 0 to 70 UC3611N UC3611Q OBSOLETE PLCC FN 20 TBD Call TI Call TI 0 to 70 UC3611QTR OBSOLETE PLCC FN 20 TBD Call TI Call TI 0 to 70 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 25-Sep-2013 NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. 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OTHER QUALIFIED VERSIONS OF UC1611, UC1611-SP, UC3611, UC3611M : • Catalog: UC3611, UC1611, UC3611M, UC3611 • Military: UC1611 • Space: UC1611-SP NOTE: Qualified Version Definitions: • Catalog - TI's standard catalog product Addendum-Page 2 PACKAGE OPTION ADDENDUM www.ti.com 25-Sep-2013 • Military - QML certified for Military and Defense Applications • Space - Radiation tolerant, ceramic packaging and qualified for use in Space-based application Addendum-Page 3 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. 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