AD ADG781BCP

a
FEATURES
1.8 V to 5.5 V Single Supply
Low On Resistance (2.5 Typ)
Low On-Resistance Flatness (0.5 )
–3 dB Bandwidth > 200 MHz
Rail-to-Rail Operation
20-Lead 4 mm 4 mm Chip Scale Package
Fast Switching Times
t ON = 16 ns
t OFF = 10 ns
Typical Power Consumption (< 0.01 W)
TTL/CMOS Compatible
For Functionally Equivalent Devices in 16-Lead TSSOP
and SOIC Packages, See ADG711/ADG712/ADG713
2.5 Quad SPST Switches
in Chip Scale Package
ADG781/ADG782/ADG783
FUNCTIONAL BLOCK DIAGRAMS
S1
IN1
IN1
D1
D1
S2
S2
IN2
IN2
ADG782
S3
IN3
S2
D2
D2
S3
IN3
D3
D3
S4
S4
IN4
D4
ADG783
S3
IN3
IN4
D1
IN2
D2
ADG781
S1
S1
IN1
D3
S4
IN4
D4
D4
SWITCHES SHOWN FOR A LOGIC “1” INPUT
APPLICATIONS
Battery Powered Systems
Communication Systems
Sample Hold Systems
Audio Signal Routing
Video Switching
Mechanical Reed Relay Replacement
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG781, ADG782, and ADG783 are monolithic CMOS
devices containing four independently selectable switches. These
switches are designed on an advanced submicron process that
provides low power dissipation and high switching speed, low on
resistance, low leakage currents and high bandwidth.
1. 20-Lead 4 mm ⫻ 4 mm Chip Scale Package (CSP).
They are designed to operate from a single 1.8 V to 5.5 V supply, making them ideal for use in battery powered instruments
and with the new generation of DACs and ADCs from Analog
Devices. Fast switching times and high bandwidth make the
part suitable for video signal switching.
3. Very Low RON (4.5 Ω max at 5 V, 8 Ω max at 3 V). At supply
voltage of 1.8 V, RON is typically 35 Ω over the temperature
range.
The ADG781, ADG782, and ADG783 contain four independent
single-pole/single throw (SPST) switches. The ADG781 and
ADG782 differ only in that the digital control logic is inverted.
The ADG781 switches are turned on with a logic low on the
appropriate control input, while a logic high is required to turn
on the switches of the ADG782. The ADG783 contains two
switches whose digital control logic is similar to the ADG781,
while the logic is inverted on the other two switches.
2. 1.8 V to 5.5 V Single Supply Operation. The ADG781,
ADG782, and ADG783 offer high performance and are
fully specified and guaranteed with 3 V and 5 V supply
rails.
4. Low On-Resistance Flatness.
5. –3 dB Bandwidth >200 MHz.
6. Low Power Dissipation. CMOS construction ensures low
power dissipation.
7. Fast tON/tOFF.
8. Break-Before-Make Switching. This prevents channel shorting
when the switches are configured as a multiplexer (ADG783
only).
Each switch conducts equally well in both directions when ON.
The ADG783 exhibits break-before-make switching action.
The ADG781/ADG782/ADG783 are available in 20-lead chip
scale packages.
REV. A
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700
www.analog.com
Fax: 781/326-8703
© Analog Devices, Inc., 2002
ADG781/ADG782/ADG783–SPECIFICATIONS
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
On-Resistance Match Between
Channels (∆RON)
On-Resistance Flatness (RFLAT(ON))
B Version
–40C to
+25C
+85C
0 V to VDD
2.5
4
4.5
0.05
0.4
0.5
1.0
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
± 0.01
± 0.1
± 0.01
± 0.1
± 0.01
± 0.1
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
0.005
DYNAMIC CHARACTERISTICS2
tON
11
Unit
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
Test Conditions/Comments
VS = 0 V to VDD, IS = –10 mA;
Test Circuit 1
VS = 0 V to VDD, IS = –10 mA
VS = 0 V to VDD, IS = –10 mA
VDD = 5.5 V;
VS = 4.5 V/1 V, VD = 1 V/4.5 V;
Test Circuit 2
VS = 4.5 V/1 V, VD = 1 V/4.5 V;
Test Circuit 2
VS = VD = 1 V, or 4.5 V;
Test Circuit 3
± 0.2
nA typ
nA max
nA typ
nA max
nA typ
nA max
2.4
0.8
V min
V max
± 0.1
µA typ
µA max
VIN = VINL or VINH
RL = 300 Ω, CL = 35 pF,
VS = 3 V; Test Circuit 4
RL = 300 Ω, CL = 35 pF,
VS = 3 V; Test Circuit 4
RL = 300 Ω, CL = 35 pF,
VS1 = VS2 = 3 V; Test Circuit 5
VS = 2 V; RS = 0 Ω, CL = 1 nF;
Test Circuit 6
RL = 50 Ω, CL = 5 pF, f = 10 MHz
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Test Circuit 7
RL = 50 Ω, CL = 5 pF, f = 10 MHz;
Test Circuit 8
RL = 50 Ω, CL = 5 pF; Test Circuit 9
f = 1 MHz
f = 1 MHz
f = 1 MHz
± 0.2
± 0.2
tOFF
6
Break-Before-Make Time Delay, tD
(ADG783 Only)
Charge Injection
6
3
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
Off Isolation
–58
–78
dB typ
dB typ
Channel-to-Channel Crosstalk
–90
dB typ
Bandwidth –3 dB
CS (OFF)
CD (OFF)
CD, CS (ON)
200
10
10
22
MHz typ
pF typ
pF typ
pF typ
0.001
µA typ
µA max
16
10
POWER REQUIREMENTS
IDD
(VDD = 5 V 10%, GND = 0 V. All specifications
–40C to +85C unless otherwise noted.)
1
1.0
VDD = 5.5 V
Digital Inputs = 0 V or 5.5 V
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. A
ADG781/ADG782/ADG783
SPECIFICATIONS1
(VDD = 3 V 10%, GND = 0 V. All specifications –40C to +85C unless otherwise noted.)
Parameter
B Version
–40C to
+25C
+85C
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
5
On-Resistance Match Between
Channels (∆RON)
On-Resistance Flatness (RFLAT(ON))
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
0 V to VDD
5.5
10
VS = 0 V to VDD, IS = –10 mA
± 0.2
nA typ
nA max
nA typ
nA max
nA typ
nA max
VDD = 3.3 V;
VS = 3 V/1 V, VD = 1 V/3 V;
Test Circuit 2
VS = 3 V/1 V, VD = 1 V/3 V;
Test Circuit 2
VS = VD = 1 V, or 3 V;
Test Circuit 3
2.0
0.8
V min
V max
± 0.1
µA typ
µA max
VIN = VINL or VINH
RL = 300 Ω, CL = 35 pF,
VS = 2 V; Test Circuit 4
RL = 300 Ω, CL = 35 pF,
VS = 2 V; Test Circuit 4
RL = 300 Ω, CL = 35 pF,
VS1 = VS2 = 2 V; Test Circuit 5
VS = 1.5 V; RS = 0 Ω, CL = 1 nF;
Test Circuit 6
RL = 50 Ω, CL = 5 pF, f = 10 MHz
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
Test Circuit 7
RL = 50 Ω, CL = 5 pF, f = 10 MHz;
Test Circuit 8
RL = 50 Ω, CL = 5 pF; Test Circuit 9
f = 1 MHz
f = 1 MHz
f = 1 MHz
0.5
2.5
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
0.005
DYNAMIC CHARACTERISTICS2
tON
13
± 0.2
± 0.2
tOFF
7
Break-Before-Make Time Delay, tD
(ADG783 Only)
Charge Injection
7
3
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
Off Isolation
–58
–78
dB typ
dB typ
Channel-to-Channel Crosstalk
–90
dB typ
Bandwidth –3 dB
CS (OFF)
CD (OFF)
CD, CS (ON)
200
10
10
22
MHz typ
pF typ
pF typ
pF typ
0.001
µA typ
µA max
20
12
POWER REQUIREMENTS
IDD
1
1.0
NOTES
1
Temperature ranges are as follows: B Version: –40°C to +85°C.
2
Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. A
Test Conditions/Comments
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
0.1
± 0.01
± 0.1
± 0.01
± 0.1
± 0.01
± 0.1
Unit
–3–
VS = 0 V to VDD, IS = –10 mA;
Test Circuit 1
VS = 0 V to VDD, IS = –10 mA
VDD = 3.3 V
Digital Inputs = 0 V or 3.3 V
ADG781/ADG782/ADG783
ABSOLUTE MAXIMUM RATINGS 1
Lead Temperature, Soldering (10 sec) . . . . . . . . . . . . 300°C
IR Reflow (<20 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 235°C
(TA = 25°C unless otherwise noted.)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
Analog, Digital Inputs2 . . . . . . . . . . –0.3 V to VDD + 0.3 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
(Pulsed at 1 ms, 10% Duty Cycle max)
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . –65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . 150°C
Chip Scale Package
θJA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 32°C/W
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. Only one absolute
maximum rating may be applied at any one time.
2
Overvoltages at IN, S, or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
ORDERING GUIDE
Model
Temperature Range
Package Description
Package Option
ADG781BCP
ADG782BCP
ADG783BCP
–40°C to +85°C
–40°C to +85°C
–40°C to +85°C
20-Lead Chip Scale (CSP)
20-Lead Chip Scale (CSP)
20-Lead Chip Scale (CSP)
CP-20
CP-20
CP-20
GND 3
0
1
OFF
ON
NC
PIN 1
IDENTIFIER
Switch 2, 3
S4 4
ON
OFF
D4 5
15 D2
ADG781/ADG782/
ADG783
TOP VIEW
(Not to Scale)
14 S2
13 VDD
12 S3
11 D3
6
7
8
9
10
NC
S1 2
Table II. Truth Table (ADG783)
Switch 1, 4
IN2
20 19 18 17 16
D1 1
Logic
NC
ON
OFF
IN3
1
0
IN1
0
1
NC
Switch Condition
NC
ADG782 In
IN4
ADG781 In
PIN CONFIGURATION
(CSP)
NC
Table I. Truth Table (ADG781/ADG782)
NC = NO CONNECT
EXPOSED PAD TIED TO SUBSTRATE, GND
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG781/ADG782/ADG783 feature proprietary ESD protection circuitry, permanent
damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper
ESD precautions are recommended to avoid performance degradation or loss of functionality.
–4–
WARNING!
ESD SENSITIVE DEVICE
REV. A
ADG781/ADG782/ADG783
TERMINOLOGY
VDD
Most positive power supply potential.
GND
S
D
IN
RON
∆RON
Ground (0 V) reference.
Source terminal. May be an input or output.
Drain terminal. May be an input or output.
Logic control input.
Ohmic resistance between D and S.
On-resistance match between any two channels (i.e., RON max and RON min).
Flatness is defined as the difference between
the maximum and minimum value of on
resistance as measured over the specified
analog signal range.
Source leakage current with the switch “OFF.”
Drain leakage current with the switch “OFF.”
Channel leakage current with the switch “ON.”
Analog voltage on terminals D, S.
“OFF” switch source capacitance.
“OFF” switch drain capacitance.
RFLAT(ON)
IS (OFF)
ID (OFF)
ID, IS (ON)
VD (VS)
CS (OFF)
CD (OFF)
CD, CS (ON)
tON
tOFF
tD
Crosstalk
Off Isolation
Charge
Injection
On Response
On Loss
“ON” switch capacitance.
Delay between applying the digital control
input and the output switching on.
Delay between applying the digital control
input and the output switching off.
“OFF” time or “ON” time measured
between the 90% points of both switches,
when switching from one address state to
another (ADG783 only).
A measure of unwanted signal that is coupled
through from one channel to another as a
result of parasitic capacitance.
A measure of unwanted signal coupling
through an “OFF” switch.
A measure of the glitch impulse transferred
from the digital input to the analog output
during switching.
The frequency response of the “ON” switch.
The loss due to the on resistance of the switch.
Typical Performance Characteristics
6
6
TA = 25C
5.5
5.5
VDD = 2.7V
5
4.5
4.5
4
3.5
VDD = 4.5V
RON – RON – 4
VDD = 3V
3
2.5
2
+85C
3.5
+25C
3
2.5
2
VDD = 5V
1.5
1.5
1
1
0.5
0.5
0
–40C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
5
0
TPC 1. On Resistance as a Function of VD (VS)
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
5
TPC 3. On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 5 V
6
10m
VDD = 5V
VDD = 3V
5.5
5
1m
+85C
4.5
+25C
100
ISUPPLY – Amps
4
RON – VDD = 5V
5
3.5
3
2.5
–40C
2
4 SW
10
1 SW
1
100n
1.5
1
10n
0.5
1n
100
0
0
0.5
1.5
2
2.5
1
VD OR VS – DRAIN OR SOURCE VOLTAGE – V
3
TPC 2. On Resistance as a Function of VD (VS) for
Different Temperatures VDD = 3 V
REV. A
1k
10k
100k
FREQUENCY – Hz
1M
10M
TPC 4. Supply Current vs. Input Switching Frequency
–5–
ADG781/ADG782/ADG783
–30
0
–40
VDD = 5V, 3V
–50
ON RESPONSE – dB
OFF ISOLATION – dB
VDD = 5V
–60
–70
–80
–90
–100
–2
–4
–110
–120
–130
10k
100k
1M
10M
FREQUENCY – Hz
–6
10k
100M
TPC 5. Off Isolation vs. Frequency
100k
100M
1M
10M
FREQUENCY – Hz
TPC 7. On Response vs. Frequency
25
–30
TA = 25C
–40
20
VDD = 5V, 3V
15
–60
–70
QINJ – pC
CROSSTALK – dB
–50
–80
–90
–100
10
VDD = 5V
VDD = 3V
5
0
–110
–5
–120
–10
–130
10k
100k
1M
10M
FREQUENCY – Hz
0
100M
0.5
1
1.5
2
2.5
3
3.5
SOURCE VOLTAGE – V
4
4.5
5
TPC 8. Charge Injection vs. Source Voltage
TPC 6. Crosstalk vs. Frequency
APPLICATIONS
C1
Figure 1 illustrates a photodetector circuit with programmable
gain. An AD820 is used as the output operational amplifier.
With the resistor values shown in the circuit, and using different
combinations of the switches, gain in the range of 2 to 16 can
be achieved.
R1
33k
5V
AD820
D1
2.5V
VOUT
R2
510k
5V
S1
D1
R4
240k
R5
240k
S2
D2
R6
120k
R7
120k
S3
D3
R8
120k
S4
D4
R9
120k
(LSB) IN1
IN2
IN3
(MSB) IN4
GND
R3
510k
2.5V
R10
120k
GAIN RANGE 2 TO 16
Figure 1. Photodetector Circuit with Programmable Gain
–6–
REV. A
ADG781/ADG782/ADG783
Test Circuits
IDS
IS (OFF)
V1
ID (OFF)
S
A
S
D
VS
D
S
NC
A
D
ID (ON)
A
VD
VD
NC = NO CONNECT
VS
RON = V1/IDS
Test Circuit 1. On Resistance
Test Circuit 2. Off Leakage
Test Circuit 3. On Leakage
VDD
0.1F
VDD
D
S
50%
50%
VIN ADG782
50%
50%
VOUT
RL
300
IN
VS
VIN ADG781
VS
CL
35pF
VOUT
90%
90%
GND
t ON
t OFF
Test Circuit 4. Switching Times
VDD
VIN
0.1F
50%
0V
VDD
S1
VS1
D1
S2
VS2
D2
VIN
VOUT2
CL2
35pF
RL2
300
IN1, IN2
RL1
300
CL1
35pF
VOUT1
VOUT1
VOUT2
ADG783
50%
90%
90%
0V
90%
90%
0V
GND
tD
tD
Test Circuit 5. Break-Before-Make Time Delay, tD
SW ON
VDD
SW OFF
VIN
VDD
RS
VS
D
S
VOUT
CL
1nF
IN
GND
VOUT
VOUT
Q INJ = CL VOUT
Test Circuit 6. Charge Injection
VDD
VDD
0.1F
0.1F
NETWORK
ANALYZER
NETWORK
ANALYZER
VDD
S
50
IN
GND
S2
VS
RL
50
VOUT
NC
D2
RL
50
50
OFF ISOLATION = 20 LOG
VS
IN
GND
CHANNEL-TO-CHANNEL
V
CROSSTALK = 20 LOG OUT
VS
VOUT
VS
Test Circuit 7. Off Isolation
REV. A
S1
RL
50
50
D
VIN
VDD
D1
VOUT
Test Circuit 8. Channel-to-Channel Crosstalk
–7–
ADG781/ADG782/ADG783
VDD
0.1F
NETWORK
ANALYZER
VDD
S
50
IN
C02372–0–3/02(A)
VS
D
VIN
RL
50
GND
INSERTION LOSS = 20 LOG
VOUT
VOUT WITH SWITCH
VOUT WITHOUT SWITCH
Test Circuit 9. Bandwidth
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
20-Lead CSP
(CP-20)
0.024 (0.60)
0.017 (0.42)
0.009 (0.24)
0.024 (0.60)
0.017 (0.42)
16
0.009 (0.24)
15
0.157 (4.0)
BSC SQ
PIN 1
INDICATOR
TOP
VIEW
0.148 (3.75)
BSC SQ
0.028 (0.70) MAX
0.026 (0.65) NOM
12 MAX
0.035 (0.90) MAX
0.033 (0.85) NOM
SEATING
PLANE
0.020 (0.50)
BSC
0.008 (0.20)
REF
0.012 (0.30)
0.009 (0.23)
0.007 (0.18)
0.030 (0.75)
0.024 (0.60)
0.020 (0.50)
0.010 (0.25)
MIN
20
1
0.089 (2.25)
0.083 (2.10) SQ
0.077 (1.95)
BOTTOM
VIEW
11
10
6
5
0.080 (2.00)
REF
0.002 (0.05)
0.0004 (0.01)
0.0 (0.0)
CONTROLLING DIMENSIONS ARE IN MILLIMETERS
Revision History
Page
Data Sheet changed from REV. 0 to REV. A.
Edits to Typical Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5–6
Changes to OUTLINE DIMENSIONS drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
–8–
REV. A
PRINTED IN U.S.A.
Location